2-21F1A
Abstract: No abstract text available
Text: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03
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2-21F1A
2-21F1A
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2SC3280
Abstract: 2-21F1A 2SA1301
Text: 2SA1301 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SC3280 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SA1301
2-21F1A
2SC3280
-10mA
2SC3280
2-21F1A
2SA1301
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2SC3281
Abstract: 2SA1302 transistor 2sc3281 transistor 2-21F1A 2SA1302
Text: 2SA1302 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SC3281 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SA1302
2-21F1A
2SC3281
-100V
2SC3281
2SA1302 transistor
2sc3281 transistor
2-21F1A
2SA1302
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2sc3281 transistor
Abstract: 2SA1302 transistor 2SC3281 2SC3281 data sheet 2-21F1A 2SA1302
Text: 2SC3281 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1302 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SC3281
2-21F1A
2SA1302
2sc3281 transistor
2SA1302 transistor
2SC3281
2SC3281 data sheet
2-21F1A
2SA1302
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PDF
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2SC3280
Abstract: 2SA1301 2-21F1A
Text: 2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SC3280
2-21F1A
2SA1301
2SC3280
2SA1301
2-21F1A
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Untitled
Abstract: No abstract text available
Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS 2 5 3 4 fS6 1. Collector1 C1 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)
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MT6L11FS
MT3S11FS
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Untitled
Abstract: No abstract text available
Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 13
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MT6L77FS
MT3S11FS
MT3S106FS
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage
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MT6L78FS
MT3S11FS
MT3S11AFS
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Untitled
Abstract: No abstract text available
Text: MT6L05FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L05FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S05T MT3S05FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04
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MT6L05FS
MT3S05T
MT3S05FS)
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Untitled
Abstract: No abstract text available
Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO
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MT6L11FS
MT3S11T
MT3S11FS)
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Untitled
Abstract: No abstract text available
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol
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MT6L55FS
MT3S07T
MT3S07FS)
MT3S05T
MT3S05FS)
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Untitled
Abstract: No abstract text available
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic
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MT6L57AFS
MT3S06T
MT3S06FS)
MT3S04AT
MT3S04AFS)
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Untitled
Abstract: No abstract text available
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)
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MT6L63FS
MT3S07T
MT3S07FS)
MT3S11T
MT3S11FS)
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Untitled
Abstract: No abstract text available
Text: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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MT6L74FS
MT3S07FS
MT3S110FS
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MT6L76FS
Abstract: No abstract text available
Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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MT6L76FS
MT3S06FS
MT3S106FS
MT6L76FS
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications Lead Pb -free.
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MT6L78FS
MT3S11FS
MT3S11AFS
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IC MARKING 1005 5 pin
Abstract: No abstract text available
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.
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MT6L58AFS
MT3S06T
MT3S06FS)
MT3S03AT
MT3S03AFS)
IC MARKING 1005 5 pin
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Q213
Abstract: No abstract text available
Text: MT6L72FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L72FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S36FS MT3S11AFS Maximum Ratings (Ta = 25°C)
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MT6L72FS
MT3S36FS
MT3S11AFS
Q213
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MT3S05FS
Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:
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MT6L55FS
MT3S07T
MT3S05T
MT3S07FS)
MT3S05FS)
MT3S05FS
MT3S05T
MT3S07FS
MT3S07T
MT6L55FS
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transistor TO-3P Outline Dimensions
Abstract: TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK
Text: Transistor Outline Package TO-3P L Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,
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21F1A
21F1B
21F1C
transistor TO-3P Outline Dimensions
TRANSISTOR 545
3p transistor
TO-3P Jedec package outline
TOSHIBA IGBT DATA BOOK
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MT6L77FS
Abstract: No abstract text available
Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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MT6L77FS
MT3S11FS
MT3S106FS
MT6L77FS
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Untitled
Abstract: No abstract text available
Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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MT6L67FS
MT3S36FS
MT3S106FS
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2-21F1A
Abstract: No abstract text available
Text: 2-21F1A Uniti m Jan,2003
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OCR Scan
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2-21F1A
20032-21F1A
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2-21F1A
Abstract: No abstract text available
Text: S-EIFIA Uniti nn 5. 45±0. 15 5. 45±0. 15 S? sO O Nane JEDEC EIAJ Toshiba Discrete Seniconductor Integrated Circuit TD-3PCL - 2-21F1A - Jan.2003
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2-21F1A
2003S-S1F1A
2-21F1A
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