SSM3K15CT
Abstract: No abstract text available
Text: SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Analog Switch Applications Unit: mm Optimum for high-density mounting in small packages • Low ON-resistance 0.6±0.05 0.5±0.03 : Ron = 4.0 Ω max (@VGS = 4 V)
|
Original
|
PDF
|
SSM3K15CT
SSM3K15CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K35CT シリコン N チャネル MOS 形 東芝電界効果トランジスタ SSM3K35CT ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 1.2 V 駆動です。 • オン抵抗が低い : Ron = 20 Ω 最大 (@VGS = 1.2 V)
|
Original
|
PDF
|
SSM3K35CT
|
SSM3J15CT
Abstract: No abstract text available
Text: SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages • Low ON-resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM3J15CT
SSM3J15CT
|
SSM3K16CT
Abstract: No abstract text available
Text: SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package • Low ON-resistance 0.6±0.05 : Ron = 3.0 Ω max (@VGS = 4 V)
|
Original
|
PDF
|
SSM3K16CT
SSM3K16CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K37CT シリコン N チャネル MOS 形 東芝電界効果トランジスタ SSM3K37CT ○ 高速スイッチング用 ○ アナログスイッチ用 • 1.5V 駆動です • オン抵抗が低い。 単位: mm RDS ON = 5.60 Ω (最大) (@VGS = 1.5 V)
|
Original
|
PDF
|
SSM3K37CT
|
SSM3J15CT
Abstract: No abstract text available
Text: SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Unit: mm Optimum for high-density mounting in small packages • Low ON-resistance : Ron = 12 Ω max (@VGS = : Ron = 32 Ω (max) (@VGS =
|
Original
|
PDF
|
SSM3J15CT
SSM3J15CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low ON-resistance : Ron = 3.0 Ω max (@VGS = 4 V)
|
Original
|
PDF
|
SSM3K16CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Analog Switch Applications Unit: mm • Optimum for high-density mounting in small packages • Low ON-resistance : Ron = 4.0 Ω max (@VGS = 4 V)
|
Original
|
PDF
|
SSM3K15CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT High-Speed Switching Applications Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 20 Unit: mm max (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4
|
Original
|
PDF
|
SSM3K35CT
|
Untitled
Abstract: No abstract text available
Text: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type -MOSVI SSM3J16CT High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Unit: mm : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM3J16CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Analog Switch Applications Unit: mm 0.6±0.05 Optimum for high-density mounting in small packages • Low ON-resistance 1.0±0.05 : Ron = 7.0 Ω max (@VGS = 2.5 V)
|
Original
|
PDF
|
SSM3K15CT
|
Untitled
Abstract: No abstract text available
Text: SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm 0.5±0.03 : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)
|
Original
|
PDF
|
SSM3J16CT
|
Untitled
Abstract: No abstract text available
Text: SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages • Low ON-resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM3J15CT
|
SSM3K15ACT
Abstract: No abstract text available
Text: SSM3K15ACT 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K15ACT ロードスイッチ用 単位: mm • 2.5V 駆動です • オン抵抗が低い： RDS ON = 3.6Ω (最大) (@VGS = 4 V) RDS(ON) = 6.0Ω (最大) (@VGS = 2.5 V)
|
Original
|
PDF
|
SSM3K15ACT
SSM3K15ACT
|
|
|
SSM3J16CT
Abstract: No abstract text available
Text: SSM3J16CT 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J16CT 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 8Ω 最大 (@VGS = −4 V)
|
Original
|
PDF
|
SSM3J16CT
SSM3J16CT
|
SSM3K16CT
Abstract: No abstract text available
Text: SSM3K16CT 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K16CT ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 0.6±0.05 オン抵抗が低い。 : Ron = 3.0 Ω 最大 (@VGS = 4 V) 0.05±0.03 小型パッケージで高密度実装に最適
|
Original
|
PDF
|
SSM3K16CT
SSM3K16CT
|
SSM3J35CT
Abstract: No abstract text available
Text: SSM3J35CT 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J35CT ○ 高速スイッチング用 ○ アナログスイッチング用 単位: mm 0.6±0.05 オン抵抗が低い : Ron = 44 Ω 最大 (@VGS = -1.2 V) : Ron = 22 Ω (最大) (@VGS = -1.5 V)
|
Original
|
PDF
|
SSM3J35CT
SSM3J35CT
|
Untitled
Abstract: No abstract text available
Text: SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT ○ High-Speed Switching Applications ○ Analog Switch Applications Unit: mm 0.6±0.05 Low ON-resistance : Ron = 44 Ω max (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V)
|
Original
|
PDF
|
SSM3J35CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K15ACT シリコン N チャネル MOS 形 東芝電界効果トランジスタ SSM3K15ACT ロードスイッチ用 単位: mm • 2.5V 駆動です • オン抵抗が低い： RDS ON = 3.6Ω (最大) (@VGS = 4 V) RDS(ON) = 6.0Ω (最大) (@VGS = 2.5 V)
|
Original
|
PDF
|
SSM3K15ACT
|
Untitled
Abstract: No abstract text available
Text: SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT High Speed Switching Applications Analog Switch Applications • 1.5Vdrive • Low ON-resistance RDS ON = 5.60 RDS(ON) = 4.05 RDS(ON) = 3.02 RDS(ON) = 2.20 Unit : mm (max) (@VGS = 1.5 V)
|
Original
|
PDF
|
SSM3K37CT
|
Untitled
Abstract: No abstract text available
Text: SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low ON-resistance : Ron = 3.0 Ω max (@VGS = 4 V)
|
Original
|
PDF
|
SSM3K16CT
|
Untitled
Abstract: No abstract text available
Text: SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages • Low ON-resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM3J15CT
|
toyocom 21.4MHz
Abstract: 45E1AZ 2 fy UM-4S 21J1FZ3 UM4S
Text: TO YO CO M • • •• MCF JU? • •• • ms,?-? U - K ? * - 5 . y ? / X ? ) l sJ v ' r y h SM '?0 pp ') fo MHz) dB kHz dB kHz 7 dB li* dB M°7 *t dB kHz — V (Q//pF) UM-4S/LF 21J1BZ5 ±7.5 1500//2.5 2.5 ±25 UM-4S/MJ 21J1BY4 21.4 UM-4S/LF 21J1FZ3
|
OCR Scan
|
PDF
|
21J1BZ5
21J1BY4
21J1FZ3
21J1FY
21M1BZ5
21M1BY
21M1FZ2
21M1FY
45E1AZ5F
45E1AY4F
toyocom 21.4MHz
45E1AZ
2 fy
UM-4S
21J1FZ3
UM4S
|
toyocom 21.4MHz
Abstract: 45E2FF "Crystal Filters" 21J2E2 21J2A2 CD 910 21J2B2 toyocom 21.4 21J1B 45e1b
Text: CRYSTAL FILTERS TOYOCOM THROUGH HOLE TYPE CRYSTAL FILTERS UM R esistan ce W eld V H F 4 5 M H z /5 5 M H z [F u n d a m e n ta l M o d e ] Passband Stopband Max ripple dB Max loss (dB) (dB) (kHz) (dB) (kHz) ±12.5 1 2 65 -9 1 0 200//4 — UM-1SLIM 30 ±12.5
|
OCR Scan
|
PDF
|
45MHz/55MHz
45E1FF
45E2FF
45E1B9F
45E2B9F
45E1A9F
45E2A9F
to-1000
21J2F2
toyocom 21.4MHz
"Crystal Filters"
21J2E2
21J2A2
CD 910
21J2B2
toyocom 21.4
21J1B
45e1b
|
