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    21N60E Price and Stock

    Vishay Siliconix SIHA21N60EF-GE3

    N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA21N60EF-GE3 Tube 1,963 1
    • 1 $4.94
    • 10 $3.278
    • 100 $4.94
    • 1000 $1.80187
    • 10000 $1.80187
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    Bristol Electronics SIHA21N60EF-GE3 900
    • 1 -
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    Vishay Siliconix SIHG21N60EF-GE3

    MOSFET N-CH 600V 21A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG21N60EF-GE3 Tube 397 1
    • 1 $5.36
    • 10 $5.36
    • 100 $5.36
    • 1000 $2.01
    • 10000 $2.01
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    Bristol Electronics SIHG21N60EF-GE3 150
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    Vishay Siliconix SIHB21N60EF-GE3

    MOSFET N-CH 600V 21A TO263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB21N60EF-GE3 Tube 30 1
    • 1 $5.1
    • 10 $5.1
    • 100 $5.1
    • 1000 $1.88
    • 10000 $1.88
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    Vishay Siliconix SIHA21N60EF-E3

    MOSFET N-CH 600V 21A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA21N60EF-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.80155
    • 10000 $1.80155
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    Vishay Siliconix SIHP21N60EF-GE3

    MOSFET N-CH 600V 21A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP21N60EF-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.79718
    • 10000 $1.79718
    		Buy Now
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    21N60E Datasheets Context Search

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    21N60

    Abstract: 21N60ED mgw diode 21n60e transistor data cd 100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced


    OCR Scan     		PDF MGW21N60ED 21N60 21N60ED mgw diode 21n60e transistor data cd 100

    21N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ipolar T ra n sisto r IG BT is c o -p a c k a g e d


    OCR Scan     		PDF MGW21N60ED/D 21N60

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT Is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced


    OCR Scan     		PDF MGW21N60ED/D 21N60ED