Untitled
Abstract: No abstract text available
Text: F-213 Rev 21NOV13 S1SS–20–28–GF–03.00–D (1,00 mm) .03937" S1SS, S1SST SERIES MICRO CABLE ASSEMBLY SPECIFICATIONS Mates with: T1M For complete specifications see www.samtec.com?S1SS Insulator Material: Nylon Contact Material: Phosphor Bronze Plating:
|
Original
|
F-213
21NOV13)
VAC/353
sam27
|
PDF
|
si1922
Abstract: SI1922EDH
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
|
Original
|
Si1922EDH
2002/95/EC
OT-363
SC-70
Si1922EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si1922
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
Si3453DV
11-Mar-11
|
PDF
|
sir882a
Abstract: No abstract text available
Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiR882ADP
11-Mar-11
sir882a
|
PDF
|
SIR876
Abstract: No abstract text available
Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
SiR876ADP
11-Mar-11
SIR876
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUM09N20-270 Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package
|
Original
|
SUM09N20-270
2002/95/EC
O-263
SUM09N20-270-E3
25trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYS12-90 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses
|
Original
|
BYS12-90
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VT2045C-M3, VIT2045C-M3, VT2045CHM3, VIT2045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
|
Original
|
VT2045C-M3,
VIT2045C-M3,
VT2045CHM3,
VIT2045CHM3
O-220AB
O-262AA
22-B106
AEC-Q101
VT2045C
VIT2045C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
|
Original
|
VT3045C-M3,
VIT3045C-M3,
VT3045CHM3,
VIT3045CHM3
O-220AB
O-262AA
22-B106
AEC-Q101
VT3045C
VIT3045C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-SD203N/R Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Stud Version 200 A FEATURES • High power fast recovery diode series • 1.0 s to 2.0 μs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics
|
Original
|
VS-SD203N/R
DO-205AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUM23N15-73 Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () ID (A) 0.073 at VGS = 10 V 23 0.077 at VGS = 6 V 22.5 • • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature Low Thermal Resistance Package
|
Original
|
SUM23N15-73
2002/95/EC
O-263
SUM23N15-73-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
MBRF 1010 OCT
Abstract: No abstract text available
Text: MBR10H150CT, MBRF10H150CT, SB10H150CT-1 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 A FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency
|
Original
|
MBR10H150CT,
MBRF10H150CT,
SB10H150CT-1
O-220AB
ITO-220AB
22-B106
MBR10H150CT
MBRF10H150CT
O-262AA
O-220AB,
MBRF 1010 OCT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SBL3030PT, SBL3040PT www.vishay.com Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
SBL3030PT,
SBL3040PT
22-B106
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBR4035PT thru MBR4060PT www.vishay.com Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
MBR4035PT
MBR4060PT
22-B106
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: M2035S, M2045S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
M2035S,
M2045S
O-220AB
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Features • Core • • • • • • • – ARM926EJ-S ARM Thumb® Processor running at up to 400 MHz @ 1.0V +/- 10% – 16 Kbytes Data Cache, 16 Kbytes Instruction Cache, Memory Management Unit Memories – One 64-Kbyte internal ROM embedding bootstrap routine: Boot on NAND Flash,
|
Original
|
ARM926EJ-Sâ
64-Kbyte
32-Kbyte
32-bit
24-bit
11052Câ
21-Nov-11
|
PDF
|
1t35
Abstract: POSITION SENSOR VMN-PT0299-1111 LINEAR OUTPUT HALL EFFECT SENSORS
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POSITION SENSORS 20 LHE Resistors - Long Life Non-Contact Sensor Linear Position Sensor, Non-Contacting Hall Effect Technology, Short Strokes: ≤ 10 mm KEY BENEFITS • • • • • • • Long lifespan no contact, no wear
|
Original
|
21-Nov-11
21-Nov-11
VMN-PT0299-1111
1t35
POSITION SENSOR
LINEAR OUTPUT HALL EFFECT SENSORS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si1902CDL
2002/95/EC
OT-363
SC-70
Si1902CDLelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
SI1902CDL
Abstract: marking code pe "Switching diode" 6pin
Text: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si1902CDL
2002/95/EC
OT-363
SC-70
Si1902CDL-T1-GE3
11-Mar-11
marking code pe
"Switching diode" 6pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RPS 250 www.vishay.com Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating: 250 W • High overload capability up to 4 times nominal power see energy curve • Easy mounting • Low thermal radiation of the case
|
Original
|
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUD50N02-06P Vishay Siliconix N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) (Ω) 20 ID (A) 0.0060 at VGS = 10 V 26 0.0095 at VGS = 4.5 V 21 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized for High Efficiency
|
Original
|
SUD50N02-06P
2002/95/EC
O-252
SUD50N02-06P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S
|
Original
|
SUP/SUB65P04-15
2002/95/EC
O-263
SUB65P04-15
SUP65P04-15
SUP65P04-15-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUD15N15-95 Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.092 at VGS = 10 V 15 0.100 at VGS = 6 V 15 • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature 100 % Rg Tested
|
Original
|
SUD15N15-95
2002/95/EC
O-252
SUD15N15-95-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT ~ By - 6 5 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. D C .100 B RECOMMENDED HOLE LAYOUT A 4805 3/ 11 4 3 2 LOC DIST AD 00 REVISIONS LTR DESCRIPTION J2 lA KH 21NOV1 ECO-11-022977 APVD DWN PRELIMINARY PART-NOT RELEASED FOR PRODUCTION.
|
OCR Scan
|
ECO-11-022977
21NOV1
08SEP75
09SEP75
15SEP75
|
PDF
|