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    SIR876 Price and Stock

    Vishay Siliconix SIR876ADP-T1-GE3

    MOSFET N-CH 100V 40A PPAK SO-8
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    DigiKey SIR876ADP-T1-GE3 Digi-Reel 5,452 1
    • 1 $2.4
    • 10 $1.542
    • 100 $2.4
    • 1000 $0.77529
    • 10000 $0.77529
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    SIR876ADP-T1-GE3 Cut Tape 5,452 1
    • 1 $2.4
    • 10 $1.542
    • 100 $2.4
    • 1000 $0.77529
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    SIR876ADP-T1-GE3 Reel 3,000 3,000
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    ES Components SIR876ADP-T1-GE3
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    Vishay Siliconix SIR876BDP-T1-RE3

    N-CHANNEL 100-V (D-S) MOSFET POW
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    DigiKey SIR876BDP-T1-RE3 Digi-Reel 5,226 1
    • 1 $1.85
    • 10 $1.177
    • 100 $1.85
    • 1000 $0.57324
    • 10000 $0.57324
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    SIR876BDP-T1-RE3 Cut Tape 5,226 1
    • 1 $1.85
    • 10 $1.177
    • 100 $1.85
    • 1000 $0.57324
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    SIR876BDP-T1-RE3 Reel 3,000 3,000
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    • 10000 $0.50581
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    Vishay Siliconix SIR876DP-T1-GE3

    MOSFET N-CH 100V 40A PPAK SO-8
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    DigiKey SIR876DP-T1-GE3 Reel
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    SIR876DP-T1-GE3 Digi-Reel 1
    • 1 $2.23
    • 10 $2.23
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    • 1000 $2.23
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    SIR876DP-T1-GE3 Cut Tape
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    Vishay Intertechnologies SIR876ADP-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR876ADP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR876ADP-T1-GE3 Reel 9,000 27 Weeks 3,000
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    • 10000 $0.6399
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    Mouser Electronics SIR876ADP-T1-GE3 11,690
    • 1 $2.17
    • 10 $1.43
    • 100 $1.03
    • 1000 $0.756
    • 10000 $0.659
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    Newark SIR876ADP-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.692
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    SIR876ADP-T1-GE3 Reel 3,000
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    SIR876ADP-T1-GE3 Cut Tape 3,000
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    TTI SIR876ADP-T1-GE3 Reel 216,000 3,000
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    • 10000 $0.65
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    TME SIR876ADP-T1-GE3 3,000
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    • 10000 $0.87
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    Avnet Asia SIR876ADP-T1-GE3 29 Weeks 3,000
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    EBV Elektronik SIR876ADP-T1-GE3 28 Weeks 3,000
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    Vishay Intertechnologies SIR876BDP-T1-RE3

    Transistor MOSFET N-CH 100V 51.4A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR876BDP-T1-RE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR876BDP-T1-RE3 Reel 20 Weeks 6,000
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    • 10000 $0.47125
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    Mouser Electronics SIR876BDP-T1-RE3 7,019
    • 1 $1.66
    • 10 $1.1
    • 100 $0.748
    • 1000 $0.55
    • 10000 $0.471
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    Newark SIR876BDP-T1-RE3 Cut Tape 27,604 5
    • 1 $1.75
    • 10 $1.19
    • 100 $0.838
    • 1000 $0.838
    • 10000 $0.838
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    SIR876BDP-T1-RE3 Reel 3,000
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    • 10000 $0.561
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    Bristol Electronics SIR876BDP-T1-RE3 5,439
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    TTI SIR876BDP-T1-RE3 Reel 6,000
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    • 10000 $0.471
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    TME SIR876BDP-T1-RE3 3,000
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    • 10000 $0.65
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    Avnet Asia SIR876BDP-T1-RE3 6,000 22 Weeks 6,000
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    EBV Elektronik SIR876BDP-T1-RE3 21 Weeks 3,000
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    Find more SIR876 price and stock on Findchips.com

    SIR876 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR876ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A 8SO Original PDF
    SIR876BDP-T1-RE3 Vishay Siliconix N-CHANNEL 100-V (D-S) MOSFET POW Original PDF
    SIR876DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A 8-SOIC Original PDF

    SIR876 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SIR876

    Abstract: No abstract text available
    Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR876ADP 11-Mar-11 SIR876 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 11-Mar-11 PDF

    AN609

    Abstract: SiR876DP 2038
    Text: SiR876DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiR876DP AN609, 12-Mar-10 AN609 2038 PDF

    SIR876DP

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR876ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SIR876DP

    Abstract: 1083
    Text: SPICE Device Model SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR876DP 18-Jul-08 1083 PDF

    SIR876

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR876 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 11-Mar-11 PDF

    SiR876ADP

    Abstract: SIR876ADP-T1-GE3
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF