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    2206B Search Results

    2206B Result Highlights (5)

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    R5F52206BGFL#30 Renesas Electronics Corporation Entry-level 32-bit Microcontrollers with Minimum Number of Peripherals Visit Renesas Electronics Corporation
    R5F52206BGFK#30 Renesas Electronics Corporation Entry-level 32-bit Microcontrollers with Minimum Number of Peripherals Visit Renesas Electronics Corporation
    R5F52206BGFM#30 Renesas Electronics Corporation Entry-level 32-bit Microcontrollers with Minimum Number of Peripherals Visit Renesas Electronics Corporation
    R5F52206BDFM#10 Renesas Electronics Corporation Entry-level 32-bit Microcontrollers with Minimum Number of Peripherals Visit Renesas Electronics Corporation
    R5F52206BDFM#V0 Renesas Electronics Corporation Entry-level 32-bit Microcontrollers with Minimum Number of Peripherals Visit Renesas Electronics Corporation
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    2206B Price and Stock

    Wima MKP1O132206B00KSSD

    CAP FILM 0.22UF 10% 1KVDC RAD
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    DigiKey MKP1O132206B00KSSD Bulk 3,375 1
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    Mouser Electronics MKP1O132206B00KSSD 461
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    Wima FKP1T022206B00JSSD

    CAP FILM 0.022UF 5% 1.6KVDC RAD
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    DigiKey FKP1T022206B00JSSD Bulk 2,095 1
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    TME FKP1T022206B00JSSD 1,574 1
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    Wima FKP1T022206B00KSSD

    CAP FILM 0.022UF 10% 1.6KVDC RAD
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    DigiKey FKP1T022206B00KSSD Bulk 1,676 1
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    Mouser Electronics FKP1T022206B00KSSD 456
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    Newark FKP1T022206B00KSSD Bulk 1,399 1
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    Wima MKS4G042206B00KSSD

    CAP FILM 2.2UF 10% 400VDC RADIAL
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    DigiKey MKS4G042206B00KSSD Bulk 1,023 1
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    Mouser Electronics MKS4G042206B00KSSD 1,246
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    Wima FKP4U022206B00KSSD

    CAP FILM 0.022UF 10% 2KVDC RAD
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    DigiKey FKP4U022206B00KSSD Bulk 994 1
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    Find more 2206B price and stock on Findchips.com

    2206B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RAD-CAB-LMR400-100

    Abstract: LMR500 RAD-CAB-LMR600-125 5606124 RAD-CAB-LMR600-150 RAD-CAB-LMR240-10 n CONNECTOR weight RAD-CAB-RG58-10 RG213U
    Text: RAD-ISM Coaxial Antenna Cables Data Sheet 2206B June 2007 All of the accessories needed for installing a wireless system — antennas, adapters, cables, and surge suppression — are available from Phoenix Contact. Please note that every connection between the radio and the antenna causes signal attenuation. The attenuation of a cable is proportional to the cable length; therefore use only as much cable as is absolutely


    Original     		PDF 2206B RAD-CAB-RG58-. RAD-CAB-RG213-. RG-58U RG-213U RAD-CAB-LMR400-100 LMR500 RAD-CAB-LMR600-125 5606124 RAD-CAB-LMR600-150 RAD-CAB-LMR240-10 n CONNECTOR weight RAD-CAB-RG58-10 RG213U

    ECH8631

    Abstract: No abstract text available
    Text: ECH8631 注文コード No. N 8 2 7 4 ECH8631 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・複合タイプであり高密度実装可能。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF ECH8631 900mm2 IT09299 --40A 900mm2 IT09300 IT09301 ECH8631

    mosfet High-Speed Switching

    Abstract: 77804 ECH8613
    Text: ECH8613 Ordering number : ENN7780 ECH8613 P-Channel Silicon MOSFET High-Speed Switching Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


    Original     		PDF ECH8613 ENN7780 900mm2 mosfet High-Speed Switching 77804 ECH8613

    MARKING FZ

    Abstract: ECH8631
    Text: ECH8631 Ordering number : ENN8274 P-Channel Silicon MOSFET ECH8631 General-Purpose Switching Device Applications Features • • • Low ON-resistance. 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ECH8631 ENN8274 900mm20 MARKING FZ ECH8631

    ECH8631

    Abstract: 2206B
    Text: ECH8631 注文コード No. N 8 2 7 4 三洋半導体データシート N ECH8631 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・複合タイプであり高密度実装可能。


    Original     		PDF ECH8631 900mm2 IT09299 --40A 900mm2 IT09300 IT09301 ECH8631 2206B

    Tf88

    Abstract: ECH8608
    Text: ECH8608 注文コード No. N 8 1 7 9 三洋半導体データシート N ECH8608 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに


    Original     		PDF ECH8608 900mm2 IT04392 --40A 900mm2 IT04376 Tf88 ECH8608

    TA-3570

    Abstract: ta3570 ECH8603
    Text: ECH8603 注文コード No. N 7 2 1 8 B 三洋半導体データシート 半導体ニューズ No.N7218A とさしかえてください。 ECH8603 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


    Original     		PDF ECH8603 N7218A 900mm2 IT04375 --40A 900mm2 IT04376 TA-3570 ta3570 ECH8603

    ECH8611

    Abstract: 12v to 6V 2a
    Text: ECH8611 Ordering number : ENN8127 P-Channel Silicon MOSFET ECH8611 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original     		PDF ECH8611 ENN8127 900mm2 ECH8611 12v to 6V 2a

    Untitled

    Abstract: No abstract text available
    Text: ECH8616 Ordering number : ENN8191 N-Channel Silicon MOSFET ECH8616 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ECH8616 ENN8191 900mm2â ECH8616/D

    8126-1

    Abstract: D2004PE ECH8621
    Text: ECH8621 注文コード No. N 8 1 2 6 三洋半導体データシート N ECH8621 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・LIB 用途に最適。 ・2.5V 駆動。


    Original     		PDF ECH8621 900mm2 IT08384 900mm2 IT08322 IT08323 8126-1 D2004PE ECH8621

    ECH8612

    Abstract: No abstract text available
    Text: ECH8612 Ordering number : ENN8258 N-Channel Silicon MOSFET ECH8612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Best suited for load switches. 1.8V drive. Composite type, facilitating high-density mounting. Specifications


    Original     		PDF ECH8612 ENN8258 900mm2 ECH8612

    ECH8608

    Abstract: No abstract text available
    Text: ECH8608 Ordering number : ENN8179 N-Channel and P-Channel Silicon MOSFETs ECH8608 General-Purpose Switching Device Applications Features • • The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.


    Original     		PDF ECH8608 ENN8179 ECH8608

    RL42

    Abstract: 8117 ECH8622 81172
    Text: ECH8622 Ordering number : ENN8117 N-Channel Silicon MOSFET ECH8622 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8622 ENN8117 900mm2 RL42 8117 ECH8622 81172

    ENN7288B

    Abstract: ECH8601 O1002
    Text: ECH8601 Ordering number : ENN7288B N-Channel Silicon MOSFET ECH8601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Suitable for lithim-ion battery use. Drain common specification. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ECH8601 ENN7288B 900mm2 ENN7288B ECH8601 O1002

    8117

    Abstract: ECH8622 81172
    Text: ECH8622 Ordering number : ENN8117 N-Channel Silicon MOSFET ECH8622 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8622 ENN8117 900mm20 8117 ECH8622 81172

    MARKING FZ

    Abstract: No abstract text available
    Text: ECH8631 Ordering number : ENN8274 P-Channel Silicon MOSFET ECH8631 General-Purpose Switching Device Applications Features • • • Low ON-resistance. 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENN8274 ECH8631 900mm2 MARKING FZ

    ECH8603

    Abstract: No abstract text available
    Text: ECH8603 Ordering number : ENN7218B P-Channel Silicon MOSFET ECH8603 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original     		PDF ECH8603 ENN7218B 900mm2 ECH8603

    ECH8616

    Abstract: No abstract text available
    Text: ECH8616 Ordering number : ENN8191 N-Channel Silicon MOSFET ECH8616 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ECH8616 ENN8191 900mm2 ECH8616

    ECH8608

    Abstract: No abstract text available
    Text: ECH8608 注文コード No. N 8 1 7 9 ECH8608 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに


    Original     		PDF ECH8608 900mm2 IT04392 --40A 900mm2 IT04376 ECH8608

    ECH8621

    Abstract: No abstract text available
    Text: ECH8621 Ordering number : ENN8126 N-Channel Silicon MOSFET ECH8621 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


    Original     		PDF ECH8621 ENN8126 900mm2 ECH8621

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    CQ220-6BS

    Abstract: No abstract text available
    Text: Datasheet F P H fm CQ220-6BS CQ220-6DS CQ220-6MS CQ220-6NS • a e m ic o n u u n o r cwrp* 6 .0 AMP TRIAC 200 THRU 800 VOLTS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-220AB CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF cq220-6bs cq220-6ds cq220-6ms cq220-6ns to-220ab CQ220-6BS CQ220 CQ220

    t5d diode

    Abstract: T5D SOT23 zetex zvn2206 package details
    Text: ZETEX SEMICOND UCTORS TSD ^70570 D □DQSbb'i 3 • ZETB 95D 0 5 6 6 9 N-channel enhancement mode vertical DMOS FET ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


    OCR Scan     		PDF ZVN2206 2206B ZVN2206L O-220 t5d diode T5D SOT23 zetex zvn2206 package details