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    L-com Inc CA900MM-2M

    CBL. SCSI-3 HPDB68M/M 2MTR
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    DigiKey CA900MM-2M Bag 10 1
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    Newark CA900MM-2M Bulk 348 1
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    L-com Inc CAUZ900MM-2M

    CBLSCSI-3 HPDB68M/M LSZH 2M
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    DigiKey CAUZ900MM-2M Bag 3 1
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    L-com Inc CAF900MM-2M

    CBL. SCSI3 HPDB68M/M W/FER 2M
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    DigiKey CAF900MM-2M Bag 1
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    Newark CAF900MM-2M Bulk 21 1
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    RS CAF900MM-2M Bulk 3 Weeks 1
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    900MM2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MCH3383

    Abstract: No abstract text available
    Text: MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS on 1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in


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    EN9000A MCH3383 PW10s, 900mm2 MCH3383 PDF

    ech8 pattern

    Abstract: ECH8651R ECH8651R-TL-H ECH8651 A10105
    Text: ECH8651R Ordering number : ENA1010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    ENA1010A ECH8651R PW10s, 900mm2 A1010-7/7 ech8 pattern ECH8651R ECH8651R-TL-H ECH8651 A10105 PDF

    bb11175

    Abstract: BB11172 BB11174 BB1117F4 REG1117 REG1117-2 REG1117-3 REG1117-5 REG1117A
    Text: REG1117 REG1117A SBVS001D − OCTOBER 1992 − REVISED JULY 2004 800mA and 1A Low Dropout Positive Regulator 1.8V, 2.5V, 2.85, 3.3V, 5V, and Adjustable FEATURES D FIXED AND ADJUSTABLE VERSIONS D 2.85V MODEL FOR SCSI-2 ACTIVE D D D D D D TERMINATION OUTPUT CURRENT:


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    REG1117 REG1117A SBVS001D 800mA REG1117: REG1117A: 800mA bb11175 BB11172 BB11174 BB1117F4 REG1117 REG1117-2 REG1117-3 REG1117-5 REG1117A PDF

    Untitled

    Abstract: No abstract text available
    Text: ECH8310 Ordering number : ENA1430 SANYO Semiconductors DATA SHEET ECH8310 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


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    ECH8310 ENA1430 900mm2Ã A1430-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH1435 Ordering number : ENA1637 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH1435 General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


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    SCH1435 ENA1637 900mm2Ã A1637-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH1331 Ordering number : ENA1530 SANYO Semiconductors DATA SHEET SCH1331 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications


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    SCH1331 ENA1530 900mm2Ã A1530-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPH6444 Ordering number : ENA1243A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6444 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


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    CPH6444 ENA1243A 900mm2â A1243-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECH8315 Ordering number : ENA1387 SANYO Semiconductors DATA SHEET ECH8315 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C


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    ECH8315 ENA1387 900mm2Ã A1387-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.


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    ECH8663R ENA1184 A1184-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPH6350 Ordering number : ENA1529 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6350 General-Purpose Switching Device Applications Features • • 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    CPH6350 ENA1529 900mm2Ã A1529-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8758B MCH6663 Power MOSFET http://onsemi.com 30V, 1.8A, 188mΩ, –30V, –1.5A, 325mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance


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    EN8758B MCH6663 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1353B MCH3478 N-Channel Power MOSFET http://onsemi.com 30V, 2A, 165mΩ, Single MCPH3 Features • • • Low ON-resistance 1.8V drive Protection diode in • • Ultrahigh speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C


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    ENA1353B MCH3478 900mm2Ã A1353-5/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1531A SCH1333 P-Channel Power MOSFET http://onsemi.com –20V, –2A, 130mΩ, Single SCH6 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    ENA1531A SCH1333 900mm2Ã A1531-7/7 PDF

    BB11174

    Abstract: BB11175 BB1117 BB11172 REG1117 bb11173 5wk9 REG1117-2 REG1117-3 REG1117-5
    Text: REG1117 800mA Low Dropout Positive Regulator 2.85V, 3V, 3.3V, 5V, and Adjustable FEATURES APPLICATIONS ● 2.85V, 3V, 3.3V, 5V, and ADJUSTABLE VERSIONS ● SCSI-2 ACTIVE TERMINATION ● HAND-HELD DATA COLLECTION DEVICES ● 2.85V MODEL FOR SCSI-2 ACTIVE


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    REG1117 800mA 800mA OT-223 REG1117 to110 REG1117-5 REF1004-2 BB11174 BB11175 BB1117 BB11172 bb11173 5wk9 REG1117-2 REG1117-3 REG1117-5 PDF

    82306

    Abstract: marking WZ 3HP04MH A0445
    Text: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


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    3HP04MH ENA0445 900mm2 A0445-4/4 82306 marking WZ 3HP04MH A0445 PDF

    3LP04MH

    Abstract: No abstract text available
    Text: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS


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    3LP04MH ENA0551 900mm2 A0551-4/4 3LP04MH PDF

    82306

    Abstract: ECH8621R
    Text: ECH8621R Ordering number : EN8718 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


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    ECH8621R EN8718 900mm2 82306 ECH8621R PDF

    PQ018EH01ZPH

    Abstract: 015E PQ015EH01ZPH PQ015EH01ZZH PQ018EH01ZZH PQ025EH01ZPH PQ025EH01ZZH O10F PQXXXEH01ZXH
    Text: PQxxxEH01ZxH Series PQxxxEH01ZxH Series Features Low Voltage Operation Low Power-Loss Voltage Regulators • Outline Dimensions Unit : mm 10.6MAX. (0.55) 3.5±0.5 3.28±0.5 (0.6) 6 ø2 015E H01 8.4±0.5 13.7MAX. Lead finish identification mark H (2.4) 1.Low voltage operation


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    PQxxxEH01ZxH O-263 11ZxH PQ025EH01ZxH 120Hz 3600mm2 900mm2 400mm2 115mm2 PQ018EH01ZPH 015E PQ015EH01ZPH PQ015EH01ZZH PQ018EH01ZZH PQ025EH01ZPH PQ025EH01ZZH O10F PDF

    CPH6621

    Abstract: No abstract text available
    Text: CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    CPH6621 ENA0847 900mm20 A0847-4/4 CPH6621 PDF

    MCH3314

    Abstract: MCH5805 SB01-05
    Text: Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Package Dimensions unit : mm 2195 0.25 [MCH5805] 0.15 0.3 5 3 2 0.65 1 0.07 1.6 4 0.25 Composite type with a P-channel sillicon MOSFET


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    ENN7125 MCH5805 MCH5805] MCH3314) SB01-05) MCH3314 MCH5805 SB01-05 PDF

    CPH6603

    Abstract: No abstract text available
    Text: Ordering number : ENN7146 CPH6603 P-Channel Silicon MOSFET CPH6603 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2202 [CPH6603] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6


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    ENN7146 CPH6603 CPH6603] CPH6603 PDF

    CPH6601

    Abstract: ENN7155 TA-3620
    Text: Ordering number : ENN7155 CPH6601 P-Channel Silicon MOSFET CPH6601 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2202 [CPH6601] 0.15 2.9 5 4 0.6 6


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    ENN7155 CPH6601 CPH6601] CPH6601 ENN7155 TA-3620 PDF

    5wk9

    Abstract: bb11182 1352B Burr Brown part marking "SCSI Terminators" Burr-Brown IC data book appendix c 1N5817 6730S REG1118 B91007604
    Text: REG1118 REG 1118 800mA Low Dropout Positive Regulator with Current Source and Sink Capability FEATURES DESCRIPTION ● SOURCES 800mA, SINKS 400mA ● 2.85V OUTPUT FOR SCSI ACTIVE NEGATION TERMINATION ● 1.3V max DROPOUT VOLTAGE AT IO = 800mA ● INTERNAL CURRENT LIMIT


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    REG1118 800mA 800mA, 400mA 800mA REG1118-2 400mA. 27-line 5wk9 bb11182 1352B Burr Brown part marking "SCSI Terminators" Burr-Brown IC data book appendix c 1N5817 6730S REG1118 B91007604 PDF

    ENA0302

    Abstract: ECH8306
    Text: ECH8306 Ordering number : ENA0302 P-Channel Silicon MOSFET ECH8306 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage


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    ECH8306 ENA0302 900mm2 A0302-4/4 ENA0302 ECH8306 PDF