DSEE8-08CC
Abstract: 10P40
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
DSEE8-08CC
10P40
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PDF
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26N50
Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM
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ISOPLUS220TM
26N50
24N50
220LVTM
IXFC26N50
IXFC24N50
IXFH26N50
728B1
123B1
728B1
26N50
IXFC 26N50
24N50
ixfc26n50
.26n50
.24n50
IXFC24N50
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PDF
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Untitled
Abstract: No abstract text available
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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Original
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
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PDF
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Untitled
Abstract: No abstract text available
Text: DSEE15-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 Vc trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 Symbol Type ISOPLUS 220LVTM DSEE15-06CC 1 Conditions 2 3 TC = 115°C; rectangular, d = 0.5
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Original
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DSEE15-06CC
ISOPLUS220TM
220LVTM
DS98827A
O-220LV
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PDF
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20n60c
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600
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ISOPLUS220TM
20N60C
220LVTM
O-220LV
728B1
065B1
123B1
20n60c
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PDF
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24N50
Abstract: 26N50 IXFC24N50 IXFC26N50 IXFH26N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM
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Original
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ISOPLUS220TM
26N50
24N50
220LVTM
IXFC26N50
IXFC24N50
IXFH26N50
728B1
123B1
728B1
24N50
26N50
IXFC24N50
IXFC26N50
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PDF
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20N60C
Abstract: UPS 380v
Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600
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Original
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ISOPLUS220TM
20N60C
220LVTM
728B1
065B1
123B1
20N60C
UPS 380v
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PDF
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60N10
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220LVTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous
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60N10
ISOPLUS220TM
220LVTM
728B1
065B1
123B1
60N10
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PDF
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IXUC160N075
Abstract: No abstract text available
Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220LVTM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous
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IXUC160N075
ISOPLUS220TM
220LVTM
728B1
065B1
123B1
IXUC160N075
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PDF
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UPS 380v
Abstract: 20n60c power switching
Text: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM
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20N60C
ISOPLUS220TM
220LVTM
E153432
728B1
065B1
123B1
UPS 380v
20n60c
power switching
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM
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Original
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ISOPLUS220TM
26N50
24N50
220LVTM
IXFC26N50
IXFC24N50
IXFH26N50
728B1
123B1
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRM¦ VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; t p = 10 ms 50 Hz , sine
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Original
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
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PDF
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220LV
Abstract: No abstract text available
Text: DSEE 6-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 6 A VRRM = 600 V trr = 20 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220LVTM Type DSEE 6-06CC 1 2 3 G Symbol Conditions Maximum Ratings IFRMS
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6-06CC
ISOPLUS220TM
220LVTM
DS98915A
O-220LV
220LV
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PDF
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IXUC200N055
Abstract: No abstract text available
Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS on = 5.1 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220LVTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous
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IXUC200N055
ISOPLUS220TM
220LVTM
728B1
065B1
123B1
IXUC200N055
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PDF
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IXUC120N10
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A Ω RDS on = 9.5 mΩ ISOPLUS 220LVTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous
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Original
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120N10
ISOPLUS220TM
220LVTM
728B1
065B1
123B1
IXUC120N10
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PDF
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