Faulhaber 2230
Abstract: s 2230 power 22E din 867 Faulhaber 2230 MOTOR faulhaber series 38/3 S2230 Gearheads
Text: DC-Micromotors 2,5 mNm Precious Metal Commutation For combination with Gearheads: 20/1, 22E, 22/2, 22/5, 22/6, 23/1, 38/3 Encoders: 5500, 5540 Series 2230 . S 2230 T UN R P2 max. η max. 003 S 3 0,6 3,69 83 006 S 6 3,0 2,94 82 012 S 12 10,8 3,27 83 015 S
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EEPROM 2864
Abstract: EPROM 27020 EEPROM 28256 27E020 EEPROM 2864 INTEL 28pC64 28c64 EPROM 27256 27C040Q intel 27512 eprom eeprom 27C040
Text: ROM Emulator for USB EeRom-8U User’s Guide EE Tools, Inc. 4620 Fortran Dr. #102 San Jose, CA 95134 www.eetools.com support@eetools.com Tel: 408 263-2221 Fax: (408) 263-2230 EeRom-8U User’s Guide Copyright 1992-2010 by E. E. Tools, Inc. All rights reserved. No part of this publication may be
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ADP32:
32-PLCC
32-DIP
ADP28:
28-DIP
EEPROM 2864
EPROM 27020
EEPROM 28256
27E020
EEPROM 2864 INTEL
28pC64 28c64
EPROM 27256
27C040Q
intel 27512 eprom
eeprom 27C040
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2SD1838
Abstract: relay 5v 30a
Text: Ordering number:EN2230B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1838 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2041A [2SD1838]
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EN2230B
2SD1838
2SD1838]
2SD1838
relay 5v 30a
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2230 motor
Abstract: 3525 3045 capacitors 3530
Text: Electrolytic Capacitors Snap-in, ultra miniature, 85˚C / 105˚C NEW Series Useful life Features 157 PUM-SI 159 PUL-SI 198 PHR-SI Power Ultra Miniature Snap-In Power Ultra Long life Snap-In Power High Ripple current Snap-In 2500 h/85°C 5000 h/105°C 15 000 h/85°C
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h/105
2230 motor
3525
3045
capacitors 3530
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Untitled
Abstract: No abstract text available
Text: Snap-in, ultra miniature, 85 °C/105 °C Product information 157 PUM-SI 159 PUL-SI 198 PHR-SI Useful life 5000 h/85 °C 5000 h/105 °C 15 000 h/85 °C Temp. range –25°C to +85 °C –25 °C to +105 °C –25°C to +85 °C Tolerance ±20% ±20% ±20% CR µF
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C/105
h/105
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capacitor 0805 avx
Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21010
MRF21010
capacitor 0805 avx
08055C103KATDA
J940
08053G105ZATEA
Bipolar NPN Transistor sot23
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M1G074-BF
Abstract: R1G225-AF11-52 r1g225 UL1004 M1G074BF soft start motor
Text: EC centrifugal fan R1G225-AF11-52 backward curved, single inlet ebm-papst Mulfingen GmbH & Co. KG Bachmühle 2 74673 Mulfingen Phone: +49 7938 81-0 Fax: +49 7938 81-110 www.ebmpapst.com info1@de.ebmpapst.com Nominal data Type R1G225-AF11-52 Motor M1G074-BF
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R1G225-AF11-52
R1G225-AF11-52
M1G074-BF
M1G074-BF
r1g225
UL1004
M1G074BF
soft start motor
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100B0R5BW
Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010R1
MRF21010LSR1
MRF21010LSR1
100B0R5BW
100B102JW
Transistor J438
100B5R6BW
MRF21010
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Transistor J438
Abstract: MRF21010 100B102JW
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010
MRF21010S
Transistor J438
100B102JW
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capacitor 0805 avx
Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21010/D
MRF21010
capacitor 0805 avx
MRF21010
08055C103KATDA
3224W
C-XM-99-001-01
08051J2R2BBT
293D106X9035D
Bipolar NPN Transistor sot23
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MRF21010
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.
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MRF21010/D
MRF21010
MRF21010S
MRF21010S
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TO272
Abstract: AN-587 motorola MW4IC2230MBR1
Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts
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MW4IC2230/D
MW4IC2230
MW4IC2230MBR1
MW4IC2230GMBR1
TO272
AN-587 motorola
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MRF21010
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21010/D
MRF21010R1
MRF21010LSR1
MRF21010LSR1
MRF21010/D
MRF21010
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MRF21010
Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010/D
MRF21010
MRF21010S
MRF21010
100B102JW
293D106X9035D2T
MRF21010S
NI-360
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MRF21010
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110
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MRF21010LR1
MRF21010LSR1
MRF21010LSR1
MRF21010/D
MRF21010
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MRF21010R1
Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21010/D
MRF21010R1
MRF21010LSR1
MRF21010R1
567 tone
MRF21010
MRF21010LSR1
100B102JW
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MRF21010
Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010/D
MRF21010R1
MRF21010SR1
MRF21010R1
MRF21010
MRF21010SR1
sot-23 macom
100B5R6B
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capacitor 2200 micro M
Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.
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MRF21010/D
MRF21010LR1
MRF21010LSR1
MRF21010LR1
capacitor 2200 micro M
MRF21010LSR1
08053G105ZATEA
MRF21010
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hatching machine
Abstract: A113 100B8R2CW MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts
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MW4IC2230/D
MW4IC2230
MW4IC2230MBR1
MW4IC2230GMBR1
hatching machine
A113
100B8R2CW
MW4IC2230GMBR1
TAJD106K035
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts
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MW4IC2230/D
MW4IC2230
MW4IC2230MBR1
MW4IC2230GMBR1
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xr2230cp
Abstract: xr 2230 XR-2230 EXAR Monolithic Function generator
Text: XR-2230 V T EX A R Pulse-Width Modulator Control System GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2230 is a high-performance monolithic pulse width modulator control system. It contains all the nec essary control blocks for designing switch mode power
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XR-2230
XR-2230
18-Pin
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
xr2230cp
xr 2230
EXAR Monolithic Function generator
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k 2057
Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
Text: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805
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-220FL/SM
k 2057
K1766
K2236
K1767
K1406
K1574
K1879
K 2149
K 2237
2SK1407
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4116 Dram
Abstract: 32T200
Text: MOTOROLA SEMICONDUCTOR -TECHNICAL DATA MCM32230 MCM32T200 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230 is a 64M dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single
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MCM32230
72-lead
MCM54400AN
32T200
32T200SH
MCM32T200
4116 Dram
32T200
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Untitled
Abstract: No abstract text available
Text: ISOLATORS General Information Equivalent Discrete Semiconductors The MOC2A40 and MOC2A6O Series are the first members of the POWER OPTO Isolator family from Motorola. The MOC2A40/MOC2A60 are 2 Amp @ 40°C/Zero-Crossing/Optlcally Coupled Triacs. These isolated AC output devices are ruggedized to survive the harsh operating environments inherent in Industrial Controller applications. Additionally, their thermally opti
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MOC2A40
MOC2A60
MOC2A40/MOC2A60
OC2A40-10/Dand
MOC2A60-10/D
KrTMOC2A40-10/D,
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