Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7176C N o tic e : T h is is n o t a fin a l s p e c ific a tio n S o m e p a ra m e tric lim its a re s u b je c t to ch a n g e . 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION
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MGF7176C
MGF7176C
28dBm
78GHz
-46dBc
25MHz
87GHz
-60dBc
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F384
Abstract: FA01384 188GHz
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F A O 1 3 8 4 Specifications are subject to change without notice._ GaAs FET HYBRID IC DESCRIPTION FA01384 is GaAs 3-Stage RF amplifier designed for N-CDMA 1.9GHz band handheld-phone. FEATURES Low voltage
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FA01384
1910MHz
600mA
1900MHz
IS-95
2288Mbps
25MHz)
28dBm
F384
188GHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7175C N o tic e : T h is is n o t a fin a l s p e c ific a tio n S o m e p a ra m e tric lim its a re s u b je c t to ch a n g e . 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION
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MGF7175C
MGF7175C
28dBm
-46dBc
25MHz
99GHz
-60dBc
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