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    SK12100C

    Abstract: SK1240C 1270C
    Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A


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    PDF SBDT-1200-1B O-22OAB SK1240C O-220 SK1240C-1250C SK1260C-1270C SK12100C 97bsbdt12 SK12100C SK1240C 1270C

    Untitled

    Abstract: No abstract text available
    Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 12 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise


    Original
    PDF SBDT-1200-1B O-22OAB SK1240C O-220 97bsbdt12

    Untitled

    Abstract: No abstract text available
    Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A


    Original
    PDF SBDT-1200-1B O-22OAB SK1240C O-220 SK1240C-1250C SK1260C-1270C SK12100C 97bsbdt12

    B0719

    Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH


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    PDF BU4080 BU606 O-220var O-220AB O-220 B0719 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070

    bot64

    Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091


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    PDF MJE1091 MJE2090 MJE2091 BOW64A BOW24A 220AB bot64 B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C


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    PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 22oab 140ns HGTD7N60C3S HGTP7N60C3

    IRF744

    Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
    Text: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous


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    PDF 22oab T0-22QAB IRF740LC IRF840LC IRFBC40LC IRFBC10LC T0-220AB O-22QAB IRFZ46 IRF1010 IRF744 IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310

    AC16F

    Abstract: triac t 444 AC16DGM AC16EGM AC16FGM H150
    Text: Thyristors AC16DGM,AC16EGM,AC16FGM 16 AC16r A "E — ;U K T R IA C A v~ 6oo K T R IA C T ”, v ^ •3 fé ^ K # ÌÌ t t 0 10.5 MAX. ft $ o T O -22OAB Y — X c o tz tö 'M m s T k f fä M i- ic o 0 i t , i tzM M 0 3.6 4.8 M A X . W- Kä* ' 1.4 1.4 fé'ê-ffi.JSTj = 125 “C -X s'h >) M M s f CO g È J t ^ 'ï S t^o


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    PDF AC16r O-220AB UL94V-0) AC16DGM AC16EGM AC16FGM AC16F triac t 444 H150

    Untitled

    Abstract: No abstract text available
    Text: • HITACHI 2S B 1078 K SIL IC O N P N P EPITAXIAL LOW F R E Q U E N C Y P O W E R A M PL IFIE R . C O M PLE M E N TA R Y PAIR W ITH 2 S D 1 3 7 7 ! Ba«r 2 Colletiof ’S Fjniwr iDimfu«k>ni in mm} JEDEC TO-22OAB ■ ABSOLUTE MAXIMUM RATINGS iT a= 25°0


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    PDF O-22OAB) 2SB107SK

    IRF710

    Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
    Text: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division


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    PDF MTP2N35/2N40 O-220AB IRF710/712 MTP2N40 IRF711/TO IRF710-713 IRF710-713 0087m. IRF710 1RF710 2N40 TT 2158 MTP2N35 Ac,713

    JE15030

    Abstract: JE15031 JE-15028 je15029 15029 MJE16028 JE-1502 JE15028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JE15028* M JE15030* PNP M JE 15029* Com plem entary Silicon Plastic Power Transistors . . . designed for use as high-frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hpE = 40 Min @ lc - 3.0 Ade


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    PDF MJE15028, MJE15029 MJE15030, MJE15031 -22OAB MJE15028 JE1S030M JE15029 MJE1S031 MJE15029 JE15030 JE15031 JE-15028 15029 MJE16028 JE-1502 JE15028

    pj 67 diode

    Abstract: pj 69 diode irf644 IRF64 pj 59 diode IRF645 IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A
    Text: HE 0 | MÖSS4S2 □□□ÖS12 a I Data Sheet No. PD-9.527A INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER IO R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED IR F 6 44 IR F 6 4 5 HEXFET TRANSISTORS ;n N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-220AB Plastic Package


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    PDF T-39-15 O-220AB C-267 IRF644, IRF645 0Q0A511 C-268 pj 67 diode pj 69 diode irf644 IRF64 pj 59 diode IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A

    TL783C

    Abstract: S125V TO-22OAB gssb 251C S125
    Text: — 250 — TL783C T I 0-7A w*tff»rsio3ai>'U- x • < o m .tn .X - , 1.25V f r i> 125V M W O fe tt- C > *6 H - c e * ;t C ia 5 g T - # £ . P O iti * S S E -700mA o H J Ì J f E t È * - 1 .2 5 V - 125V O A iJ ^ - 0 .0 0 1 % /V typ o 'J y ;l/fflI E J± "- 7 6 d B typ


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    PDF TL783C -700mA O-22OAB 220AB 500mA, TL783C I700mA 15mAS/oâ rS700jnA S125V TO-22OAB gssb 251C S125