Contextual Info: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C

IRF744

Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
Contextual Info: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous

SK12100C

Abstract: SK1240C 1270C
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 12 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A

AC16F

Abstract: triac t 444 AC16DGM AC16EGM AC16FGM H150
Contextual Info: Thyristors AC16DGM,AC16EGM,AC16FGM 16 AC16r A "E — ;U K T R IA C A v~ 6oo K T R IA C T ”, v ^ •3 fé ^ K # ÌÌ t t 0 10.5 MAX. ft $ o T O -22OAB Y — X c o tz tö 'M m s T k f fä M i- ic o 0 i t , i tzM M 0 3.6 4.8 M A X . W- Kä* ' 1.4 1.4 fé'ê-ffi.JSTj = 125 “C -X s'h >) M M s f CO g È J t ^ 'ï S t^o

Contextual Info: • HITACHI 2S B 1078 K SIL IC O N P N P EPITAXIAL LOW F R E Q U E N C Y P O W E R A M PL IFIE R . C O M PLE M E N TA R Y PAIR W ITH 2 S D 1 3 7 7 ! Ba«r 2 Colletiof ’S Fjniwr iDimfu«k>ni in mm} JEDEC TO-22OAB ■ ABSOLUTE MAXIMUM RATINGS iT a= 25°0

B0719

Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH

IRF710

Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division

bot64

Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091

JE15030

Abstract: JE15031 JE-15028 je15029 15029 MJE16028 JE-1502 JE15028
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JE15028* M JE15030* PNP M JE 15029* Com plem entary Silicon Plastic Power Transistors . . . designed for use as high-frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hpE = 40 Min @ lc - 3.0 Ade

pj 67 diode

Abstract: pj 69 diode irf644 IRF64 pj 59 diode IRF645 IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A
Contextual Info: HE 0 | MÖSS4S2 □□□ÖS12 a I Data Sheet No. PD-9.527A INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER IO R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED IR F 6 44 IR F 6 4 5 HEXFET TRANSISTORS ;n N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-220AB Plastic Package

TL783C

Abstract: S125V TO-22OAB gssb 251C S125
Contextual Info: — 250 — TL783C T I 0-7A w*tff»rsio3ai>'U- x • < o m .tn .X - , 1.25V f r i> 125V M W O fe tt- C > *6 H - c e * ;t C ia 5 g T - # £ . P O iti * S S E -700mA o H J Ì J f E t È * - 1 .2 5 V - 125V O A iJ ^ - 0 .0 0 1 % /V typ o 'J y ;l/fflI E J± "- 7 6 d B typ