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Vishay Siliconix IRF644PBF MOSFET N-CH 250V 14A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF644PBF	Tube	1,016		1	1 $2.46 10 $2.46 100 $2.46 1000 $0.79674 10000 $0.69712	Buy Now
RS	IRF644PBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.9 10000 $2.75	Get Quote
New Advantage Corporation	IRF644PBF		3,250		1	1 - 10 - 100 $0.6574 1000 $0.6574 10000 $0.6574	Buy Now
Vishay Siliconix IRF644STRRPBF MOSFET N-CH 250V 14A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF644STRRPBF	Cut Tape	605		1	1 $4.7 10 $3.113 100 $4.7 1000 $4.7 10000 $4.7	Buy Now
	IRF644STRRPBF	Digi-Reel	605		1	1 $4.7 10 $3.113 100 $4.7 1000 $4.7 10000 $4.7	Buy Now
	IRF644STRRPBF	Reel			800	1 - 10 - 100 - 1000 $1.73839 10000 $1.68625	Buy Now
Vishay Siliconix IRF644PBF-BE3 MOSFET N-CH 250V 14A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF644PBF-BE3	Tube	457		1	1 $2.46 10 $2.46 100 $2.46 1000 $0.79674 10000 $0.69712	Buy Now
Vishay Siliconix IRF644SPBF MOSFET N-CH 250V 14A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF644SPBF	Tube	338		1	1 $4.55 10 $4.55 100 $4.55 1000 $1.63552 10000 $1.612	Buy Now
RS	IRF644SPBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.02 10000 $1.92	Get Quote
Rochester Electronics LLC IRF644 14A, 250V, 0.28 OHM, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF644	Bulk			151	1 - 10 - 100 - 1000 $2 10000 $2	Buy Now

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IRF644 Datasheets (63)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF644	Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF
IRF644	International Rectifier	250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package	Original	PDF
IRF644	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF644	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 14A TO-220AB	Original	PDF
IRF644	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF644	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRF644	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRF644	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF644	International Rectifier	Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)	Scan	PDF
IRF644	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 14A, Pkg Style TO-220AB	Scan	PDF
IRF644	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF644	Unknown	FET Data Book	Scan	PDF
IRF644	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF644	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRF644	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRF644A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRF644A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF644A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRF644B	Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF
IRF644B	Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF

IRF644 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF644, SiHF644 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039	Original	IRF644PbF O-220AB 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040	Original	IRF644SPbF 08-Mar-07	PDF
Untitled Abstract: No abstract text available Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from	Original	94107B IRF644N IRF644NS IRF644NL 08-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF644B/IRFS644B O-220 FP001 O-220F IRFS644B FP001	PDF
Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRF644S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V	Original	IRF644S	PDF
IRF644PBF Abstract: IRF644 SiHF644-E3 SiHF644 diode 330 Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF644, SiHF644 O-220 O-220 18-Jul-08 IRF644PBF IRF644 SiHF644-E3 diode 330	PDF
IRF644B Abstract: IRFS644B IRF series mosfet irf 150 Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF644B/IRFS644B O-220 IRF644B IRFS644B IRF series mosfet irf 150	PDF
IRF644N Abstract: IRF644NL IRF644NS SiHF644N SiHF644N-E3 SiHF644NS SiHF644NS-E3 Text: IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 V RDS(on) (Ω) VGS = 10 V • Dynamic dV/dt Rating 0.240 RoHS* • 175 °C Operating Temperature	Original	IRF644N, IRF644NS, IRF644NL, SiHF644N SiHF644NS SiHF644NL O-262) O-220 O-263) 18-Jul-08 IRF644N IRF644NL IRF644NS SiHF644N-E3 SiHF644NS-E3	PDF
Untitled Abstract: No abstract text available Text: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.28 68 Qgs (nC) 11 Qgd (nC) 35 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D S G • Halogen-free According to IEC 61249-2-21	Original	IRF644S, SiHF644S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
644NS Abstract: IRF644NLPBF Text: PD - 95161 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF644NPbF IRF644NSPbF IRF644NLPbF l HEXFET Power MOSFET	Original	O-220 O-220AB AN-994. IRF644N) IRF644NS/L) 644NS IRF644NLPBF	PDF
irf7309 Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964 Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S	Original	OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A 150L10A DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964	PDF
IRF644N Abstract: IRF644NL IRF644NS diode gp 634 Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from	Original	94107B IRF644N IRF644NS IRF644NL O-220 12-Mar-07 IRF644N IRF644NL IRF644NS diode gp 634	PDF
Untitled Abstract: No abstract text available Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF644, SiHF644 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

Untitled Abstract: No abstract text available Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration	Original	IRF644, SiHF644 O-220 O-220 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF644S, SiHF644S 2002/95/EC O-263) 18-Jul-08	PDF
IRF644N Abstract: IRF644NL IRF644NS diode gp 634 diode gp 421 Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from	Original	94107B IRF644N IRF644NS IRF644NL O-220 O-220AB AN-994. IRF644N) IRF644NS/L) IRF644N IRF644NL IRF644NS diode gp 634 diode gp 421	PDF
IRF644A Abstract: No abstract text available Text: IRF644A A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 250V	OCR Scan	IRF644A IRF644A	PDF
irf644 Abstract: Irfp244 Text: IRF644/645 IRFP244/245 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 irf644 Irfp244	PDF
rf1s644s Abstract: No abstract text available Text: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM TA17423E RF644, IRF645 rf1s644s	PDF
IRF644 Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure	OCR Scan	G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF644 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRF644 Curren07	PDF
Untitled Abstract: No abstract text available Text: PD-9.1006 In tern atio n al k ?r R e c tifie r IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description	OCR Scan	IRF644S SMD-220 SMD-220 D-6380 DD51453	PDF
Untitled Abstract: No abstract text available Text: IRF644A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ Vos = 250V	OCR Scan	IRF644A	PDF

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IRF644 Datasheets (63)

IRF644 Datasheets Context Search

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644NS

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