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    23C80 Search Results

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    23C80 Price and Stock

    Honeywell Sensing and Control 123C8034P001

    V Basic Switch |Honeywell 123C8034P001
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    Newark 123C8034P001 Bulk 200
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    Genteq 23C802F200EI1H1

    Genteq |Genteq 23C802F200EI1H1
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    Onlinecomponents.com 23C802F200EI1H1
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    capcom 23C802F200EI1H1

    Capacitor, Electrolytic,8000,200v, -40C to +95C | CAPCOM formerly Genteq 23C802F200EI1H1
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    RS 23C802F200EI1H1 Bulk 50
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    Panduit Corp 07498380883

    Terminals NYL-FORK 22-18 RED #6
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    TTI 07498380883 Each 2,000 1,000
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    23C80 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    23C80 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    23C80B ABB Group Power Semiconductor Data Book 1976 Scan PDF

    23C80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA


    Original
    MX23C8000 100/120/150/200ns MX23C8000 100/120/150/200ns. JUN/08/2000 NOV/08/2000 JUL/16/2001 APR/25/2002 APR/26/2002 NOV/21/2002 PDF

    358 ez 808

    Abstract: G9141 MIL-C-24308 d-sub connectors Molex Micro SAS 393 EZ 639 JWT Connector RJ45 panel mount ZZL-4016-36LD 51psb micro sata connector
    Text: ND3% BASE1 XXXX5216-0809-1-P 809 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 16:58 TS:TS date TS time CONNECTORS & ACCESSORIES Find the Newest Technologies Online FLAT/FLEX RIBBON CABLE CONNECTORS PAK20 2mm WIREMOUNT SOCKETS 0.100 x 0.100″ THREE-WALL


    Original
    PAK20 152210-0100-GB 152212-0100-GB 152220-0100-GB 152226-0100-GB 152240-0100-GB 25C7411 54H5165 14N5254 54H5156 358 ez 808 G9141 MIL-C-24308 d-sub connectors Molex Micro SAS 393 EZ 639 JWT Connector RJ45 panel mount ZZL-4016-36LD 51psb micro sata connector PDF

    8088 microprocessor circuit diagram

    Abstract: 23C8000 8088 microprocessor pin description 23C80 23C8000-10 MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10
    Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible • Operating current : 40mA • Standby current : 100uA


    Original
    MX23C8000 100/120/150/200ns 100uA MX23C8000 100/120/150/200ns. SEP/25/1997 JAN/29/1999 JUN/08/2000 NOV/08/2000 JUL/16/2001 8088 microprocessor circuit diagram 23C8000 8088 microprocessor pin description 23C80 23C8000-10 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10 PDF

    VG-230

    Abstract: 23C8001 74HC00 74HC125 74HC05 datasheet U9 74HC244
    Text: 8 7 6 5 4 3 2 1 D D C C BLOCK DIAGRAM VG-230 SYSTEM MEMORY I/O CONNECTORS PCMCIA CONNECTORS BUFFERS/PWR SUPPLY A_CFG1 B_CFG1 C_CFG1 D_CFG1 E_CFG1 F_CFG1 B B A A VADEM Title VG-230 SAMPLE SCHEMATIC - CONFIG. 1 THESE SCHEMATICS ARE PROVIDED AS A DESIGN GUIDE ONLY.


    Original
    VG-230 VG-230 230CFG1 74HC244 VCC230 23C8001 74HC00 74HC125 74HC05 datasheet U9 74HC244 PDF

    Untitled

    Abstract: No abstract text available
    Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible • Operating current : 40mA • Standby current : 100uA


    Original
    MX23C8000 100/120/150/200ns 100uA MX23C8000 100/120/150/200ns. inte-32TSOP PM0137 SEP/25/1997 JAN/29/1999 JUN/08/2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA


    Original
    MX23C8000 100/120/150/200ns MX23C8000 100/120/150/200ns. JAN/29/1999 JUN/08/2000 NOV/08/2000 JUL/16/2001 APR/25/2002 APR/26/2002 PDF

    23C8000

    Abstract: 23C8000-10 MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10
    Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA


    Original
    MX23C8000 100/120/150/200ns MX23C8000 100/120/150/200ns. impoJUL/03/2003 23C8000 23C8000-10 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10 PDF

    Vadem

    Abstract: VG-230 TRK00 vg230 CD2A
    Text: 8 7 6 5 4 3 2 1 D D C C BLOCK DIAGRAM VG-230 SYSTEM MEMORY PCMCIA I/F CONNECTORS MODEM/SERIAL I/F A_CFG6 B_CFG6 C_CFG6 D_CFG6 E_CFG6 F_CFG6 B B A A VADEM Title VG-230 SAMPLE SCHEMATICS - CONFIG. 6 THESE SCHEMATICS ARE PROVIDED AS A DESIGN GUIDE ONLY. VADEM ASSUMES NO RESPONSIBILITY FOR FINAL SYSTEM DESIGN.


    Original
    VG-230 VG-230 RS232 74HCT241 Vadem TRK00 vg230 CD2A PDF

    2n3904 a19

    Abstract: 74hc373 U24A TC55257 Vadem VG-230 vg230 u23a 74HC125 2N3904 A24
    Text: 8 7 6 5 4 3 2 1 D D C C BLOCK DIAGRAM VG-230 MEMORY SYSTEM ROM I/O CONNECTORS PCMCIA BUFFERS PCMCIA CONNECTORS A_CFG7 B_CFG7 C_CFG7 D_CFG7 E_CFG7 F_CFG7 G_CFG7 B B A A VADEM Title VG-230 SAMPLE SCHEMATICS - CONFIG. 7 THESE SCHEMATICS ARE PROVIDED AS A DESIGN GUIDE ONLY.


    Original
    VG-230 VG-230 74HC125 74HC4075 74HC245 2n3904 a19 74hc373 U24A TC55257 Vadem vg230 u23a 74HC125 2N3904 A24 PDF

    23c8000

    Abstract: MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10 23C8000-10
    Text: Introduction Selection Guide 23C8000 8M-BIT 1M x 8 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100µA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC - 32 pin plastic TSOP


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    MX23C8000 100/120/150/200ns MX23C8000 100/120/150/200ns. 23c8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10 23C8000-10 PDF

    23C8000

    Abstract: No abstract text available
    Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible • Operating current : 40mA • Standby current : 100uA


    Original
    MX23C8000 100/120/150/200ns 100uA MX23C8000 100/120/150/200ns. 24pin PM0137 SEP/25/1997 JAN/29/1999 JUN/08/2000 23C8000 PDF

    23C8001

    Abstract: 02c15 GM23C8001
    Text: ¿fe 23C8001 GoldStar 1,048,576 WORDSx 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C8001 high performance Read Only Memory is organized as 1,048,576 words by 8 bits and has an access tim e of 120ns. It needs no


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    GM23C8001 23C8001 120ns. 32-DIP, 000400b 02c15 GM23C8001 PDF

    MQ4A

    Abstract: 32-SO
    Text: 23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C8000D(G) is • • • • 1,048,576 x 8 bit organization Fast access tim e : 100ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.)


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    KM23C8000D 100ns 23C8000D 32-DIP-600 23C8000DG 32-SO P-525 23C8000D 32-DIP-600) MQ4A PDF

    d23c8000xcz

    Abstract: s48g 23C8000 PD23C8000xcz
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The /¿23C8000X is a 8, 388, 608 bits m ask-program m able ROM. The word organization is selectable (BYTE mode: 1, 048, 576 w ords by 8 bits, W ORD mode: 524, 288 words by 16 bits).


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    /512K-WORD 16-BIT uPD23C8000X PD23C8000X 42-pin 44-pin 48-pin d23c8000xcz s48g 23C8000 PD23C8000xcz PDF

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT /23C8001 EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The ,23C8001 EJ is a 8,388,608 bits 1,048,576 words by 8 bits mask-programm able ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.


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    /iPD23C8001 uPD23C8001 32-pin PD23C8001EJGW uPD23C8001EJGU-9JH PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D n 7=1^142 G Q lllb B b CMOS MASK ROM 23C8000 8M-BH 1M X 8 CMOS MASK ROM FEATURES • • • • • • • • • 1,048,576 x 8 bit organization Fast access tim e: 150ns (max.) Supply voltage: single + 5 V C urrent consum ption


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    KM23C8000 150ns 32-pln, KM23C8000) 23C8000G) PDF

    circuit diagrams retu 3.02

    Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
    Text: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is


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    VMIVME-DR11W-A VMEbus-T0-DR11W VMIC60 000009D8 00000A8C DR11WA 00126C 00127C FF00FF00 00128C circuit diagrams retu 3.02 APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin PDF

    23C8001A

    Abstract: 23C8001 KM23C2001 2001h 23c4001
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28


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    32000G 32000FP. 23C32100G 32100FP 23C8001A 23C8001 KM23C2001 2001h 23c4001 PDF

    3H1 ferroxcube

    Abstract: ferroxcube 3E2 4322-020-34420 43220203440 4330-030-34220 432202034400 4313-020-15170 4322-021-33850 4322-020-97160 4322-021-30
    Text: !r0 FERROKCUBE Description by Part Number List FERROXCUBE PART NUMBERS 12NC BREAKDOWN 43 12 Magnetic for 3rd party Factory code 020 5593 Pairs Halves Accessories Drawing no. Issue no. changes with packaging at factory FACTORY CODES SET CODES 35 = 12 = 22 =


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    PT23/11/I-3F3-A315 PT23/11/I-3F3-A400 PTS23/11/I-3C81 PTS23/11/I-3C81-A100 PTS23/11/I-3C81-A160 PTS23/11/I-3C81-A250 PTS23/11/I-3C81-A315 PTS23/11/I-3C81-A400 PTS23/11/I-3C85 PTS23/11 3H1 ferroxcube ferroxcube 3E2 4322-020-34420 43220203440 4330-030-34220 432202034400 4313-020-15170 4322-021-33850 4322-020-97160 4322-021-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: •WXIC 23C8000 8M-BIT 1 M x 8 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100|aA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC - 32 pin plastic TSOP 1M x 8 organization


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    MX23C8000 100/120/150/200ns MX23C8000 100/120/150/200ns. PDF

    Untitled

    Abstract: No abstract text available
    Text: m A M 23C8000 MACRONIX. INC. M x 8 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100)1 A • Package type: - 32 pin plastic DIP - 32 pin plastic SOP 1M x 8 organization Single +5V power supply Fast access time: 120/150/200ns max)


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    X23C8000 120/150/200ns MX23C8000 120/150/200ns. MX23CPulse MX23C8000PC-12 MX23C8000MC-12 MX23C8000PC-15 MX23C8000MC-15 MX23C8000PC-20 PDF

    23C8001

    Abstract: 8001E uPD23C8001E
    Text: 23C8001E 1,048,576 x 8-Bit Mask-Programmable CMOS ROM SEC NEC Electronics Inc. Description Pin Configuration The /JPD23C 8001E is a 1,084,576-word by 8-bit ROM fabricated with CMOS silicon-gate technology and designed to operate from a single + 5-volt power


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    uPD23C8001E /JPD23C 8001E 576-word 32-pin JJPD23C8001E 23C8001 PDF

    A10O

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT 23C8001 EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The ,23C8001 EJ is a 8,388,608 bits 1,048,576 words by 8 bits mask-programm able ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.


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    juPD23C8001 uPD23C8001 32-pin A10O PDF