DICLAD522T
Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
Text: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and
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NEL2035F03-24
NEL2035F03-24
DICLAD522T
NEL2001
NEL2004
NEL2012
NEL2035
V06C
ZO 189 transistor
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F1 J37
Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
Text: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm
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NEL200101-24
NEL2001012-24
F1 J37
class-A amplifier
RF NPN POWER TRANSISTOR 2.5 GHZ
1S2075
NEL2001
NEL200101-24
NEL2004
NEL2012
NEL2035
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d1763
Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
Text: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
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NEL2012F03-24
NEL2012F03-24
d1763
d1780
D1780 transistor
TRANSISTOR D1792
D1789 transistor
D1795
D1789
NT 407 F transistor
D1778
D1795 transistor
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NEC E170632
Abstract: No abstract text available
Text: DATA SHEET TFT COLOR LCD MODULE NL6448AC33-24 26 cm 10.4 inches , 640 x 480 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Wide viewing angle DESCRIPTION NL6448AC33-24 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising
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NL6448AC33-24
NL6448AC33-24
NEC E170632
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VO6C
Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2
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NEL2004F02-24
NEL2004F02-24
VO6C
NEL2004
NEL2035
NEL2001
NEL2012
VO-6C
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NEC k 1995 transistor
Abstract: 3SK176A rf id based home appliances control
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. f = 470 MHz NF = 2.0 dB TYP. (f = 470 MHz)
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3SK176A
NEC k 1995 transistor
3SK176A
rf id based home appliances control
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k2550
Abstract: 2SK2550
Text: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)
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2SK2550
k2550
2SK2550
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2SK3051
Abstract: K3051
Text: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)
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2SK3051
2SK3051
K3051
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Untitled
Abstract: No abstract text available
Text: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)
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2SK3051
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k2550
Abstract: 2SK2550
Text: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)
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2SK2550
k2550
2SK2550
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celeritek LNA
Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz
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CDQ0303-QS
24-May-06
CDQ0303-QS
celeritek LNA
microwave transducer
Tower Mounted Amplifiers Dual Band
CDQ0303-QS-0G0T
MCH185A101JK
PB-CDQ0303-QS-00A0
PB-CDQ0303-QS-00B0
CDQ0303-QS-0G00
Coil Craft 104
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TPCF8102
Abstract: No abstract text available
Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)
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TPCF8102
TPCF8102
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Untitled
Abstract: No abstract text available
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz
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CDQ0303-QS
24-May-06
CDQ0303-QS
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Untitled
Abstract: No abstract text available
Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)
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TPCF8102
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TPCF8102
Abstract: No abstract text available
Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) · High forward transfer admittance: |Yfs| = 14 S (typ.)
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TPCF8102
TPCF8102
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2SK30
Abstract: 2SK3051 K3051
Text: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)
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2SK3051
2SK30
2SK3051
K3051
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k2550
Abstract: 2SK2550
Text: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)
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2SK2550
k2550
2SK2550
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TPCF8102
Abstract: A2430
Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)
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TPCF8102
TPCF8102
A2430
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k2550
Abstract: No abstract text available
Text: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)
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2SK2550
k2550
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TPC8305
Abstract: No abstract text available
Text: TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.)
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TPC8305
TPC8305
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nec 0882
Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Text: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
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NEL2012F03-24
NEL2012F03-24
nec 0882
transistor NEC 0882 p
NEC silicon epitaxial power transistor 1694
al 232 nec
TRANSISTOR 0835
1652 nec
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2SD843
Abstract: No abstract text available
Text: TOSHIBA 2SD843 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD843 INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS 1 2 001 05-24 - TOSHIBA 2SD843 ELECTRICAL CHARACTERISTICS Ta = 25°C 2 2 001 05-24 - COLLECTOR-EMITTER VOLTAGE hpE Vq e
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2SD843
2SD843
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th 20594
Abstract: HA 17723 30976 1982U 22024U
Text: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.
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2SC5288
2SC5288
SC-61
2SC5288-T1
th 20594
HA 17723
30976
1982U
22024U
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3SK242
Abstract: SK242
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz
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3SK242
3SK242
SK242
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