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    NEL2004 Price and Stock

    Mean Well NEL-200-4.2

    AC/DC CONVERTER 4.2V 168W
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    DigiKey NEL-200-4.2 Box
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    Onlinecomponents.com NEL-200-4.2 10
    • 1 $157.99
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    Master Electronics NEL-200-4.2 10
    • 1 $157.99
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    NEC Electronics Group NEL2004F02-24

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    Bristol Electronics NEL2004F02-24 20
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    NEL2004 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NEL2004 NEC Semiconductor Selection Guide Original PDF
    NEL-200-4.2 MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Converters - I/P 180 264VAC O/P 4.2V/40A Original PDF
    NEL2004F02-24 NEC NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR Original PDF
    NEL2004F02-24 NEC NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier Original PDF
    NEL2004F02-24-AZ NEC TRANS GP BJT 30V 1.5A Original PDF

    NEL2004 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C 5478 transistor

    Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3


    Original     		NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 173278 LARGE SIGNAL IMPEDANCES PDF

    C 5478 transistor

    Abstract: transistor 5478 7807 transistor NEL2004 1N4454 1N5254 NEL2004F02-24 resistor 39 ohm diode 1n4454
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB BASE • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) 3±0.2 2±0.2 5.85±0.2 EMITTER


    Original     		NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor NEL2004 1N4454 1N5254 resistor 39 ohm diode 1n4454 PDF

    VO6C

    Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2


    Original     		NEL2004F02-24 NEL2004F02-24 VO6C NEL2004 NEL2035 NEL2001 NEL2012 VO-6C PDF

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 PDF

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 PDF

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY PDF

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro PDF

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original     		PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 PDF

    NEL2000

    Abstract: NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.


    Original     		NEL2000 P10381EJ3V1DS00 NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W PDF

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508 PDF

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 PDF

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor PDF

    F1 J37

    Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm


    Original     		NEL200101-24 NEL2001012-24 F1 J37 class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035 PDF

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 PDF

    DICLAD522T

    Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and


    Original     		NEL2035F03-24 NEL2035F03-24 DICLAD522T NEL2001 NEL2004 NEL2012 NEL2035 V06C ZO 189 transistor PDF

    C 5478 transistor

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


    OCR Scan     		NEL2004F02-24 NEL2004F02-24isan th-19 24-Hour C 5478 transistor PDF

    C 5478 transistor

    Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


    OCR Scan     		NEL2004F02-24 NEL2004F02-24 C 5478 transistor 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear" PDF

    C 5478 transistor

    Abstract: 7807 transistor LM 1709
    Text: NPN SILICON BIPOLAR NEL2004F02.24 L - BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) • HIGH LINEAR GAIN:


    OCR Scan     		NEL2004F02 NEL2004F02-24 the83 C 5478 transistor 7807 transistor LM 1709 PDF

    NEL2001

    Abstract: NEL2000 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PC N/PC S base station applications.


    OCR Scan     		NEL2000 NEL200101-24 NEL2004F02-24 NEL2012F02-24 NEL2035F03-24 NEL2001 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave PDF

    LDB 107

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.


    OCR Scan     		NEL2000 P10381EJ3V1DS00 LDB 107 PDF

    NEM0899F01-30

    Abstract: No abstract text available
    Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added


    OCR Scan     		NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30 PDF

    NEM0899F01-30

    Abstract: BL 130 301
    Text: VHF Silicon MOSFET for Broadcast/Base Station T Y H Ç tt. ¡m t :fittaafar • iw u y i I V»* : ■m' w h iá * NEM0899F01-301 NEM0995F01-301 new> F011 F011 460 to 860 820 to 960 Poirr P out dBm (W) Gain Efficienc (dBm) (%) 30 AB 50 100 12 30 AB 49.8 95


    OCR Scan     		NEM0899F01-301 NEM0995F01-301 NEL200101-24 MC-7852 MC-7856 50-860M MC-7862 MC-7866 NEM0899F01-30 BL 130 301 PDF