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    24 VOLTS SMPS Search Results

    24 VOLTS SMPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    B0695-A Coilcraft Inc SMPS Transformer Visit Coilcraft Inc Buy
    C1099-A Coilcraft Inc SMPS Transformer Visit Coilcraft Inc Buy
    Q4338-B Coilcraft Inc SMPS Transformer, Visit Coilcraft Inc Buy
    U6875-A Coilcraft Inc SMPS Transformer Visit Coilcraft Inc Buy
    C0972-AL Coilcraft Inc SMPS Transformer Visit Coilcraft Inc

    24 VOLTS SMPS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410 and


    Original     		PDF AON6410 AON6410/L AON6410 AON6410L -AON6410L

    AON6410

    Abstract: soic8 footprint
    Text: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6410


    Original     		PDF AON6410 AON6410/L AON6410L -AON6410L AON6410 soic8 footprint

    AON7406

    Abstract: No abstract text available
    Text: AON7406 30V N-Channel MOSFET General Description Features The AON7406 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. VDS (V) = 30V ID = 33A


    Original     		PDF AON7406 AON7406

    Untitled

    Abstract: No abstract text available
    Text: AON6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6414 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AON6414 AON6414

    AON6414

    Abstract: AON6414L AON6416 J3028 AON6416L 30V 20A smps
    Text: AON6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6414/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6414 and


    Original     		PDF AON6414 AON6414/L AON6414 AON6416L -AON6414L AON6414L AON6416 J3028 30V 20A smps

    AO4480

    Abstract: No abstract text available
    Text: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.


    Original     		PDF AO4480 AO4480

    AO4480L

    Abstract: AO4480 24 volts smps
    Text: AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480/L uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.


    Original     		PDF AO4480 AO4480/L AO4480 AO4480L -AO4480L 24 volts smps

    AON7406

    Abstract: No abstract text available
    Text: AON7406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7406 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product


    Original     		PDF AON7406 AON7406

    AO4480

    Abstract: No abstract text available
    Text: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.


    Original     		PDF AO4480 AO4480

    Untitled

    Abstract: No abstract text available
    Text: AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications.


    Original     		PDF AO4480 AO4480

    Untitled

    Abstract: No abstract text available
    Text: AO4406A 30V N-Channel MOSFET General Description Product Summary The AO4406A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)


    Original     		PDF AO4406A AO4406A

    AON7406

    Abstract: No abstract text available
    Text: AON7406 30V N-Channel MOSFET General Description Features The AON7406 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. VDS (V) = 30V ID = 11A


    Original     		PDF AON7406 AON7406

    Untitled

    Abstract: No abstract text available
    Text: AO4476A 30V N-Channel MOSFET General Description Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose


    Original     		PDF AO4476A AO4476A

    Untitled

    Abstract: No abstract text available
    Text: AO4406A 30V N-Channel MOSFET General Description Product Summary The AO4406A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V)


    Original     		PDF AO4406A AO4406A

    AO4406AL

    Abstract: AO4406
    Text: AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.


    Original     		PDF AO4406AL AO4406AL 4406AL AO4406

    ao4476a

    Abstract: No abstract text available
    Text: AO4476A 30V N-Channel MOSFET General Description Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose


    Original     		PDF AO4476A AO4476A

    AO4476AL

    Abstract: 86 diode
    Text: AO4476AL 30V N-Channel MOSFET General Description Product Summary The AO4476AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose


    Original     		PDF AO4476AL AO4476AL 86 diode

    Untitled

    Abstract: No abstract text available
    Text: AON6410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6410 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AON6410 AON6410

    Untitled

    Abstract: No abstract text available
    Text: AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V


    Original     		PDF AON6410 AON6410

    AON7400A

    Abstract: DSAE00220
    Text: AON7400A 30V N-Channel MOSFET General Description Product Summary The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a high side switch in SMPS and general purpose


    Original     		PDF AON7400A AON7400A DSAE00220

    Untitled

    Abstract: No abstract text available
    Text: AO4716 30V N-Channel MOSFET SRFET General Description Product Summary SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and


    Original     		PDF AO4716 AO4716

    Untitled

    Abstract: No abstract text available
    Text: AON6520 30V N-Channel MOSFET General Description Product Summary The AON6520 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. ID (at VGS=10V)


    Original     		PDF AON6520 AON6520

    Untitled

    Abstract: No abstract text available
    Text: AON6520 30V N-Channel MOSFET General Description Product Summary The AON6520 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS 30V


    Original     		PDF AON6520 AON6520

    ao4712

    Abstract: No abstract text available
    Text: AO4712 30V N-Channel MOSFET 1234566576 General Description Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4712 AO4712