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    AON6416L

    Abstract: AON6416
    Text: AON6416L 30V N-Channel MOSFET TM SDMOS General Description Product Summary The AON6416L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited


    Original     		PDF AON6416L AON6416L N6416L AON6416

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    AON6414

    Abstract: AON6414L AON6416 J3028 AON6416L 30V 20A smps
    Text: AON6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON6414/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. AON6414 and


    Original     		PDF AON6414 AON6414/L AON6414 AON6416L -AON6414L AON6414L AON6416 J3028 30V 20A smps