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    240101S Search Results

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    240101S Price and Stock

    Infineon Technologies AG PTF240101S-V1

    RF MOSFET LDMOS 28V H-32259-2
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    240101S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    Application Notes on LM7805

    Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
    Text: 240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The 240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF240101S PTF240101S 10-watt, CDMA2000 Application Notes on LM7805 lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 BCP56 ceramic capacitor 47 pf

    PTF240101S

    Abstract: LM7805
    Text: 240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The 240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF240101S PTF240101S 10-watt, LM7805

    240101S

    Abstract: No abstract text available
    Text: 240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The 240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF240101S PTF240101S 10-watt, 240101S

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    LM7805

    Abstract: PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S
    Text: 240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The 240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF240101S PTF240101S 10-watt, CDMA2000 H-32259-2 LM7805 PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    siemens PMB 6610

    Abstract: PEB 4266 T V1.2 taifun 6034-T PMB 6610 PMB 6819 PEB 83000 PEF 22628 PEF 24628 E PEF 24628 psb 50505
    Text: 2006/2007 Published by Infineon Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Communication Edition July 2006 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006.


    Original     		PDF TUA6045 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 siemens PMB 6610 PEB 4266 T V1.2 taifun 6034-T PMB 6610 PMB 6819 PEB 83000 PEF 22628 PEF 24628 E PEF 24628 psb 50505