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    Molex 0442480030

    CONN MOD JACK 8P8C R/A SHIELDED
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    DigiKey 0442480030 Tray 1,509 1
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    TTI 0442480030 Tray 40 1
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    ComSIT USA 0442480030 160
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    Abracon Corporation ABM12-48.000MHZ-B2X-T3

    CRYSTAL 48.0000MHZ 8PF SMD
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    DigiKey ABM12-48.000MHZ-B2X-T3 Cut Tape 934 1
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    ABM12-48.000MHZ-B2X-T3 Digi-Reel 934 1
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    STMicroelectronics BTB24-800BWRG

    TRIAC ALTERNISTOR 800V 25A TO220
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    DigiKey BTB24-800BWRG Tube 926 1
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    Avnet Americas BTB24-800BWRG Tube 2,000 15 Weeks 1
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    Newark BTB24-800BWRG Bulk 2,976 1
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    STMicroelectronics BTB24-800BWRG 4,246 1
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    Avnet Silica BTB24-800BWRG 57,300 16 Weeks 50
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    TE Connectivity 2-2842480-0

    20P SPRING TB PLUG W/ FLG 3.5, G
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    DigiKey 2-2842480-0 Box 720 1
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    Molex 0442480029

    CONN MOD JACK 8P8C R/A SHIELDED
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    DigiKey 0442480029 Tray 407 1
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    TTI 0442480029 Tray 637 7
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    Interstate Connecting Components 0442480029 49
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    24800 Datasheets (36)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2-480-0000-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0001-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0010-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0011-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0100-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0101-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0110-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0111-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0200-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0201-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0210-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0211-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0300-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0301-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0310-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0311-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0400-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0401-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0411-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF
    2-480-0500-00 BEI Edcliff Instruments Downhole Potentiometric Pressure Transducer Original PDF

    24800 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    0533

    Abstract: D20200
    Text: C 11 Î/ SEMICONDUCTOR DIV HE D 3 «cal laaibHO oooim^b r -iS-¡/S-01 A G24802 CMD Microcircuits CMOS Voice Packet Assembler/Disassembler VPAD Features General Description • Advanced C M O S design for low power consumption • Interfaces with G 24800 M PR T Transparent 8-bit parallel


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    lB31b40 G24802 G24800 12-byte 40-PIN 0533 D20200 PDF

    Untitled

    Abstract: No abstract text available
    Text: M D/ SEM ICONDUCTOR D I V HE D lfi31bHQ 0 0 0 1 4 1 3 3 • CAL T-1S-V5-01 A G24802 CMD Microcircuits CMOS Voice Packet Assembler/Disassembler VPAD Features General Description • Advanced C M O S design for low power consumption • Interfaces with G 24800 M PR T Transparent 8-bit parallel


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    lfi31bHQ T-1S-V5-01 G24802 12-byte PDF

    bsc25-0225

    Abstract: bsc2502 RXB38
    Text: ^ G 24800 CMD Microcircuits_ CMOS Mini-Packet Receiver/Transmitter MPRT Features • between one o r tw o 8-bit m icroprocessors (Transparent Voice a nd N on-Transparent Data) and a 2-w ire subscriber loop inter­ face. The G 24800 M PR T offers significant advantages in digital


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


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    78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original
    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    EDLSD224H5R5C

    Abstract: EDLEN204RL3R3S supercapacitor EDLF473A5R5C EDLF474B5R5C EDLF684B5R5C EDLHW106D2R3R EDLHW226D2R3R EDLHW306D2R3R EDLHW475D2R3R
    Text: Type EDL Electric Double Layer Supercapacitors Ultra High Capacitance, Small Case Size Options Type EDL electric double layer supercapacitors offer extremely high capacitance values farads in a variety of packaging options that will satisfy, low profile, surface mount, through hole and


    Original
    PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original
    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original
    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original
    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: Revision 22 IGLOO Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original
    PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original
    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    2c39

    Abstract: 2C39B 2C39-B 24800 general electric Scans-0017382
    Text: ELECTRONICS 2C39-B 2 C 3 9 -B ET-T1054B Page 1 PLANAR TRIODE 1 2 -6 1 DESCRIPTION AND RATINGFOR G R O U N D ED -G R ID OSCILLATOR A N D AM PLIFIER SERVICE M etal and Ceramic Low Interelectrode Capacitances High Transconductance Shock Resistant 100 W atts Plate Dissipation


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    2C39-B ET-T1054B 2C39-B K-556I K-556 2c39 2C39B 24800 general electric Scans-0017382 PDF

    UM0560

    Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
    Text: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard


    Original
    UM0560 UM0560 STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S PDF

    LCBT67S

    Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
    Text: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.


    Original
    PDF

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV6402M S29GL128N 110R PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    LH28F640BFHG-PBTL70A

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1 . ESCC www.vishay.com Vishay Draloric Hi-Rel Thin Film MINI-MELF Resistors FEATURES • High-reliability product • ESA approved to ESCC 4001/022 • Advanced thin film technology • SnPb termination plating, minimum 6 % Pb APPLICATIONS • Aerospace


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    2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    LRS1830

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.


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    LRS1830 LRS1830) EL14Z046 LRS1830 PDF

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


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    M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000 PDF

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


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    Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00 PDF