Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    24A SMD MARKING Search Results

    24A SMD MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    24A SMD MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Comchip Low Capacitance ESD Protection Diode SMD Diode Specialist CPDQR5V0SP-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 ESD ±8kV (Contact) , ±15kV(Air). - IEC61000-4-4 (FET) rating. 40A( 5/50uS) 0.041(1.05) 0.037(0.95) - IEC61000-4-5 (Lightning) rating. 24A( 8/20uS)


    Original     		PDF 0402/SOD-923F IEC61000-4-2 IEC61000-4-4 5/50uS) IEC61000-4-5 8/20uS) 0402/SOD-923F MIL-STD-202 QW-JP025

    IF12A

    Abstract: D12E120 SMD MARKING CODE 2025
    Text: IDB12E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling


    Original     		PDF IDB12E120 P-TO220-3 IDB12E120 D12E120 Q67040-S4385 IF12A D12E120 SMD MARKING CODE 2025

    D12E120

    Abstract: IDB12E120 IDP12E120 Q67040-S4385 Q67040-S4389 150-TC3
    Text: IDP12E120 IDB12E120 Preliminary data Fast Switching EmConDiode Product Summary Feature 1200 V IF 12 A VF 1.65 V Tjmax 150 °C VRRM 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO220-3.SMD Low forward voltage


    Original     		PDF IDP12E120 IDB12E120 P-TO220-3 P-TO220-2-2. Q67040-S4389 D12E120 D12E120 IDB12E120 IDP12E120 Q67040-S4385 Q67040-S4389 150-TC3

    D12E120

    Abstract: IDB12E120 IDP12E120 Q67040-S4385 Q67040-S4389 24A SMD MARKING SMD MARKING CODE 2025
    Text: IDP12E120 IDB12E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.


    Original     		PDF IDP12E120 IDB12E120 P-TO220-3 P-TO220-2-2. Q67040-S4389 D12E120 D12E120 IDB12E120 IDP12E120 Q67040-S4385 Q67040-S4389 24A SMD MARKING SMD MARKING CODE 2025

    60n3l

    Abstract: 60N3LH5 60n3 STU60N3LH5 JESD97 STD60N3LH5 smd diode marking b6 ISD24 60N3LH5 DPAK
    Text: STD60N3LH5 STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID STD60N3LH5 30V 0.008Ω 48A STU60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STD60N3LH5 STU60N3LH5 60n3l 60N3LH5 60n3 STU60N3LH5 JESD97 STD60N3LH5 smd diode marking b6 ISD24 60N3LH5 DPAK

    60n3l

    Abstract: 60N3LH5 STD60N3LH5
    Text: STD60N3LH5 STU60N3LH5 N-channel 30V - 0.0072Ω - 48A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID STD60N3LH5 30V 0.008Ω 48A STU60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STD60N3LH5 STU60N3LH5 60n3l 60N3LH5

    power Diode 800V 12A

    Abstract: D12E120 800A IDP12E120 IEC61249-2-21
    Text: IDP12E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant


    Original     		PDF IDP12E120 PG-TO220-2 IEC61249-2-21 D12E120 power Diode 800V 12A D12E120 800A IDP12E120 IEC61249-2-21

    D12E120

    Abstract: IDB12E120 power Diode 800V 12A IDP12E120 PG-TO263-3-2 SMD MARKING CODE 800a
    Text: IDB12E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling


    Original     		PDF IDB12E120 PG-TO263-3-2 D12E120 D12E120 IDB12E120 power Diode 800V 12A IDP12E120 PG-TO263-3-2 SMD MARKING CODE 800a

    D12E120

    Abstract: No abstract text available
    Text: IDP12E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO220-2-2. • Low forward voltage • Easy paralleling


    Original     		PDF IDP12E120 PG-TO220-2-2. Q67040-S4389 D12E120 D12E120

    D12E120

    Abstract: No abstract text available
    Text: IDP12E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO220-2-2. • Low forward voltage C • Easy paralleling


    Original     		PDF IDP12E120 PG-TO220-2-2. D12E120 D12E120

    D12E120

    Abstract: No abstract text available
    Text: IDB12E120 Fast Switching Emitter Controlled Diode Product Summary Feature VRRM • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage


    Original     		PDF IDB12E120 PG-TO263-3-2 D12E120 D12E120

    SMD TRANSISTOR 12a

    Abstract: smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D
    Text: STTA1206G  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr typ 28ns VF (max) 1.5V K A IF(AV) K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.


    Original     		PDF STTA1206G SMD TRANSISTOR 12a smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D

    Untitled

    Abstract: No abstract text available
    Text: SFC05C-1 ChipClampΤΜ Flip Chip Single Line TVS Diode Not Recommended for new Design. Consult ffact act or or R eplacement actor oryy ffor Replacement PRELIMINARY PROTECTION PRODUCTS Description Features ‹ 350 Watts peak pulse power tp = 8/20µs ‹ Transient protection for data lines to


    Original     		PDF 5/50ns) SFC05C-1 SFC05C-1

    SFC05C-1

    Abstract: No abstract text available
    Text: SFC05C-1 ChipClampΤΜ Flip Chip Single Line TVS Diode PRELIMINARY PROTECTION PRODUCTS Description Features ‹ 350 Watts peak pulse power tp = 8/20µs ‹ Transient protection for data lines to The SFC05C-1 is a single line flip chip CSP TVS diode. It is a state-of-the-art device that utilizes solid-state


    Original     		PDF SFC05C-1 5/50ns) SFC05C-1

    smd diode marking A3

    Abstract: No abstract text available
    Text: SFC05-4 CSP TVS Flip Chip TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features ! 300 Watts peak pulse power tp = 8/20µs ! Transient protection for data lines to The SFC05-4 is a quad flip chip CSP TVS diode array. They are state-of-the-art devices that utilize solid-state


    Original     		PDF SFC05-4 SFC05-4 smd diode marking A3

    F45U

    Abstract: MARKING CODE SMD IC CSP marking code
    Text: SFC05-4 ChipClampΤΜ Flip Chip TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features ‹ 300 Watts peak pulse power tp = 8/20µs ‹ Transient protection for data lines to The SFC05-4 is a quad flip chip CSP TVS diode array. They are state-of-the-art devices that utilize solid-state


    Original     		PDF SFC05-4 SFC05-4 5/50ns) F45U MARKING CODE SMD IC CSP marking code

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor For ESD Protection Formosa MS ESD3Z SERIES List List. 1 Package outline. 2


    Original     		PDF JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1038 METHOD-1056 METHOD-1021 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor For ESD Protection Formosa MS ESD3Z SERIES List List. 1 Package outline. 2


    Original     		PDF JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1038 METHOD-1056 METHOD-1021 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor For ESD Protection Formosa MS ESD3ZxxC SERIES List List. 1 Package outline. 2


    Original     		PDF JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1038 METHOD-1056 METHOD-1021 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor For ESD Protection Formosa MS ESD3Z SERIES List List. 1 Package outline. 2


    Original     		PDF MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 METHOD-1021 1000hrs. METHOD-1031

    ESD3Z12

    Abstract: No abstract text available
    Text: Formosa MS SMD Transient Voltage Suppressor For ESD Protection ESD3Z SERIES List List. 1 Package outline. 2


    Original     		PDF MIL-STD-202F METHOD-208 MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 1000hrs. METHOD-1021 ESD3Z12

    smd diode marking 2J

    Abstract: ESD3Z24C ESD3Z5 smd diode marking 2H smd marking code 2j ESD3Z12C
    Text: SMD Transient Voltage Suppressor For ESD Protection Formosa MS ESD3ZxxC SERIES List List. 1 Package outline. 2


    Original     		PDF MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 METHOD-1056 METHOD-1021 smd diode marking 2J ESD3Z24C ESD3Z5 smd diode marking 2H smd marking code 2j ESD3Z12C

    Untitled

    Abstract: No abstract text available
    Text: Low Capacitance SMD TVS Array ESDA3L03 thru ESDA3L24C Formosa MS List List. 1 Package outline. 2


    Original     		PDF ESDA3L03 ESDA3L24C MIL-STD-750D METHOD-1026 JESD22-A102 METHOD-1051 METHOD-1056 1000hrs.

    smd diode 319

    Abstract: No abstract text available
    Text: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273


    OCR Scan     		PDF OT-223 Q67000-S273 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd diode 319