1N5400-1N5408

Abstract: APPLICATION DIODE 1N5406 LITEON 1N5406 1n5406 liteon 1N54001 diode 1n5406 1n5408 BL 1n54001n5408 1N5401 Vishay DIODE 1N5402 3a
Contextual Info: 1N5400–1N5408 Vishay Lite–On Power Semiconductor 3.0A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 200A peak D Low reverse leakage current D Plastic material – UL Recognition

200T

Abstract: 52659a
Contextual Info: >4 MIN TU BING LEADWIR EÍ LEADWIRES A TU BING 2 8 AWG, 7 x 3 6 STRANDED, SIDVER PDATED C O P P E R, BLACK TEELON INSULATION TEFLON HOUSING STAINLESS R ESISTA NC E AT 25"C 1 OOK OHMS ± 1 ”C RROM 1 05°C TO 1 65"C MAXIMUM 200" E TE M P E R A T U R E STEEL

UG1001

Abstract: UG1002 UG1003 UG1004 UG1005
Contextual Info: UG1001–UG1005 Vishay Lite–On Power Semiconductor 1.0A Ultra–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Ultra–fast switching for high efficiency High current capability and low forward voltage

BYT86

Contextual Info: BYT86 Vishay Telefunken Ultra Fast Recovery Silicon Power Rectifier Features D D D D D Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time 14282 Applications Fast rectifiers in S.M.P.S, freewheeling and snubber

BY448

Abstract: BY458
Contextual Info: BY448.BY458 Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications 94 9539 High voltage rectifier Efficiency diode in horizontal deflection circuits Absolute Maximum Ratings Tj = 25_C Parameters

Contextual Info: UG3001-UG3005 Vishay Lite-On Power Semiconductor 3.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • U ltra -fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

j2504

Abstract: J2508 BJ2510
Contextual Info: GBJ25005-GBJ2510 Vishay Lite-On Power Semiconductor 25A Glass Passivated Bridge Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • H igh c a s e d ie le c tric s tre n g th o f 1 5 0 0 V r m s • L o w re ve rs e le a k a g e c u rre n t

Contextual Info: KB PC35005/W-KB PC3510/W Vishay Lite-On Power Semiconductor 35A Bridge Rectifier Features K B P C -W • D iffu se d ju n c tio n • L o w re ve rs e le a k a g e c u rre n t • S u rg e o v e rlo a d ra tin g to 4 0 0 A p e a k • E le c tric a lly is o la te d m e ta l c a s e fo r m a x im u m

Contextual Info: _ BY228 Vishay Telefunken ▼ Silicon Mesa Rectifier Features • G lass passivated junction • H erm etically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits % Absolute Maximum Ratings Tj = 2 5 °C

MAX 2830

Contextual Info: GBPC15005/W-GBPC1510/W Vishay Lite-On Power Semiconductor 15A Glass Passivated Bridge Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • L o w re ve rs e le a k a g e c u rre n t • L o w p o w e r loss, hig h e ffic ie n c y

SF20CG

Abstract: SF20AG SF20BG SF20DG SF20FG SF20GG SF20HG SF20JG
Contextual Info: SF20AG–SF20JG Vishay Lite–On Power Semiconductor 2.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage

1505G

Contextual Info: PR1501G/S-PR1507G/S Vishay Lite-On Power Semiconductor 1.5A Fast Recovery Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard

Contextual Info: PBU401-PBU407 Vishay Lite-On Power Semiconductor ▼ 4.0A Bridge Rectifier Features • D iffu se d ju n c tio n • L o w fo rw a rd v o lta g e d ro p , h igh c u rre n t c a p a b ility • S u rg e o v e rlo a d ra tin g to 2 0 0 A p e a k • Ideal fo r p rin te d c irc u it b o a rd a p p lic a tio n s

r810d

Contextual Info: STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor 8.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

5408P

Contextual Info: ES3A/B-ES3D/B Vishay Lite-On Power Semiconductor 3.0A Surface Mount Ultra-Fast Rectifier Features • G lass passivated die construction • S u p e r-fa s t recovery tim e fo r high efficiency • Low forw ard voltage drop and high current capability •

Contextual Info: G BPC25005/W-G BPC2510/W Vishay Lite-On Power Semiconductor 25A Glass Passivated Bridge Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • L o w re ve rs e le a k a g e c u rre n t • L o w p o w e r loss, hig h e ffic ie n c y

Contextual Info: BYT12P/1OOOA Vishay Telefunken Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • M esa glass passivated • Low sw itch on pow er losses • Good so ft recovery behaviour • Fast forw ard recovery tim e • Fast reverse recovery tim e

diode SB560

Contextual Info: SB520-SB560 Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 150A peak

BYV37-BYV38

Contextual Info: BYV37.BYV38 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications Fast ’’so ft recovery” rectifier Absolute Maximum Ratings

Contextual Info: KBPC15005/W-KBPC1510/W Vishay Lite-On Power Semiconductor 15A Bridge Rectifier Features K B P C -W • D iffu se d ju n c tio n • L o w re ve rs e le a k a g e c u rre n t • S u rg e o v e rlo a d ra tin g to 3 0 0 A p e a k • E le c tric a lly is o la te d m e ta l c a s e fo r m a x im u m

Contextual Info: PR6001-PR6005 Vishay Lite-On Power Semiconductor 6.0A Fast Recovery Rectifier Features • D iffu se d ju n c tio n • F a st s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility and lo w fo rw a rd v o lta g e d ro p • S u rg e o v e rlo a d ra tin g to 3 0 0 A p e a k

Contextual Info: 1N5400G-1N5408G Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 125A peak • Plastic m aterial - UL R ecognition flam m ability

Contextual Info: BYT08P/600A/800A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • M esa glass passivated • Low sw itch on pow er losses • Good so ft recovery behaviour • Fast forw ard recovery tim e • Fast reverse recovery tim e

BL2040

Abstract: BL2040CT BL2030 BL2030C BL2045 BL2040C
Contextual Info: SBL2030CT-SBL2060CT Vishay Lite-On Power Semiconductor 20A Schottky Barrier Rectifier Features • S c h o ttk y b a rrie r ch ip • G u a rd ring die c o n s tu c tio n fo r tra n s ie n t p ro te c tio n • L o w p o w e r loss, hig h e ffic ie n c y •