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    UG1004 Price and Stock

    Taiwan Semiconductor UG1004G

    DIODE ARRAY GP 200V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UG1004G Tube 1,000 1
    • 1 $0.87
    • 10 $0.87
    • 100 $0.5536
    • 1000 $0.38223
    • 10000 $0.32688
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    Avnet Americas UG1004G Tube 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.29624
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    Mouser Electronics UG1004G
    • 1 $0.87
    • 10 $0.699
    • 100 $0.553
    • 1000 $0.359
    • 10000 $0.326
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    Taiwan Semiconductor UG1004GH

    DIODE ARRAY GP 200V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UG1004GH Tube 1,000 1
    • 1 $0.87
    • 10 $0.87
    • 100 $0.5536
    • 1000 $0.38223
    • 10000 $0.32688
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    Avnet Americas UG1004GH Tube 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.29624
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    Mouser Electronics UG1004GH
    • 1 $0.87
    • 10 $0.711
    • 100 $0.553
    • 1000 $0.382
    • 10000 $0.326
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    TME UG1004GH 1
    • 1 $0.732
    • 10 $0.583
    • 100 $0.488
    • 1000 $0.453
    • 10000 $0.453
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    Diodes Incorporated UG1004-T

    DIODE GEN PURP 400V 1A DO41
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    DigiKey UG1004-T Reel 5,000
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    • 10000 $0.10238
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    World Products Inc UG1004

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UG1004 5,000
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    • 1000 $0.1155
    • 10000 $0.0542
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    NAC UG1004 1,000
    • 1 $0.11
    • 10 $0.11
    • 100 $0.11
    • 1000 $0.069
    • 10000 $0.069
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    Master Electronics UG1004 5,000
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    • 1000 $0.1155
    • 10000 $0.0542
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    World Products Inc UG1004TA

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC UG1004TA 3,000
    • 1 $0.11
    • 10 $0.11
    • 100 $0.11
    • 1000 $0.069
    • 10000 $0.069
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    Master Electronics UG1004TA 3,000
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    • 1000 $0.1444
    • 10000 $0.0542
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    Find more UG1004 price and stock on Findchips.com

    UG1004 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UG1004 Diodes 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Original PDF
    UG1004 Diodes Short Form Selection Guide Original PDF
    UG1004 Lite-On Technology 400V, 1.0A ultra fast glass passivated rectifier Original PDF
    UG1004 Lite-On Technology Ultra Fast Glass Passivated Rectifier Original PDF
    UG1004 Vishay Ultra-Fast Rectifier (trr less than 100nsec) Original PDF
    UG1004-A Diodes RECTIFIER FAST-RECOVERY SINGLE 1A 400V 30A-ifsm 1.3V-vf 50ns 5uA-ir DO-41 5K/AMMO Original PDF
    UG1004-B Diodes RECTIFIER FAST-RECOVERY SINGLE 1A 400V 30A-ifsm 1.3V-vf 50ns 5uA-ir DO-41 1K/BULK Original PDF
    UG1004G C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 200V 10A TO220AB Original PDF
    UG1004GHC0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 200V 10A TO220AB Original PDF
    UG1004M Lite-On Technology 400V, 1.0A ultra fast glass passivated rectifier Original PDF
    UG1004-T Diodes DIODE ULTRA FAST RECOVERY RECTIFIER 400V 1TA=55CA DO-41 T/R Original PDF

    UG1004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ug1006

    Abstract: UG1001 UG1002 UG1003 UG1004 UG1005 UG1007
    Text: LITE-ON SEMICONDUCTOR UG1001 thru UG1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop


    Original     		PDF UG1001 UG1007 DO-41 DO-41 UG1004 UG1005 ug1006 UG1002 UG1003 UG1004 UG1007

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR UG1001 thru UG1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop


    Original     		PDF UG1001 UG1007 DO-41 DO-41

    UG1001

    Abstract: UG1002 UG1003 UG1004 UG1005
    Text: UG1001–UG1005 Vishay Lite–On Power Semiconductor 1.0A Ultra–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Ultra–fast switching for high efficiency High current capability and low forward voltage


    Original     		PDF UG1001 UG1005 UG1001 UG1002 UG1003 UG1004 D-74025 24-Jun-98 UG1002 UG1003 UG1004 UG1005

    ug1006

    Abstract: UG1001 UG1002 UG1003 UG1004 UG1005 UG1007
    Text: LITE-ON SEMICONDUCTOR UG1001 thru UG1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop


    Original     		PDF UG1001 UG1007 DO-41 DO-41 ug1006 UG1002 UG1003 UG1004 UG1005 UG1007

    UG1001

    Abstract: UG1002 UG1003 UG1004 UG1005
    Text: UG1001 - UG1005 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop B A A Surge Overload Rating to 30A Peak


    Original     		PDF UG1001 UG1005 DO-41 J-STD-020C MIL-STD-202, UG1001-B UG1001-T UG1002 UG1003 UG1004 UG1005

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


    Original     		PDF M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt

    UG1001

    Abstract: UG1002 UG1003 UG1004 UG1005 UG1006 UG1007
    Text: LITE-ON SEMICONDUCTOR UG1001 thru UG1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop


    Original     		PDF UG1001 UG1007 DO-41 DO-41 UG1004 UG1005 UG1002 UG1003 UG1004 UG1006 UG1007

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR UG1001M thru UG1007M REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop


    Original     		PDF UG1001M UG1007M DO-41 DO-41

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR UG1001 thru UG1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop


    Original     		PDF UG1001 UG1007 DO-41 DO-41 UG1004 UG1004

    Untitled

    Abstract: No abstract text available
    Text: UG1001 - UG1005 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop


    Original     		PDF UG1001 UG1005 MIL-STD-202, DO-41 UG1004 DS27008

    Untitled

    Abstract: No abstract text available
    Text: LITE ON POWER SEMICONDUCTOR UG1001 thru UG1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere ULTRA FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current


    Original     		PDF UG1001 UG1007 DO-41 DO-41 UG1004 UG1005

    u2225b

    Abstract: MCT12E U6204 U6202B U2829 U327M MC50K g1140 U2528B U427B
    Text: Quality and Reliability Report 1998 TEMIC Semiconductors 06.98 Table of Contents TEMIC QUALITY POLICY .1 QUALITY SYSTEM .2


    Original     		PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    UG1001

    Abstract: UG1002 UG1003 UG1004 UG1005
    Text: NOT RECOMMENDED FOR NEW DESIGN UG1001 - UG1005 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Features • • • • • Glass Passivated Die Construction Ultra-Fast Switching for High Efficiency Surge Overload Rating to 30A Peak Low Reverse Leakage Current


    Original     		PDF UG1001 UG1005 DO-41 J-STD-020C MIL-STD-202, 21evices DS27008 UG1002 UG1003 UG1004 UG1005

    RECTIFIER marking UG 08

    Abstract: UG10 UG1001 UG1002 UG1003 UG1004 UG1005
    Text: r w \T ^ r r I N C O R P O R A T E UG1001 - UG1005 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER D Features Glass Passivated Die Construction Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak


    OCR Scan     		PDF UG1001 UG1005 MIL-STD-202, DO-41 DS27008 UG1005 RECTIFIER marking UG 08 UG10 UG1002 UG1003 UG1004

    MARKING FZ

    Abstract: UG1001 UG1002 UG1003 UG1004 UG1005
    Text: UG1001 - UG1005 VISHAY 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak


    OCR Scan     		PDF UG1001 -UG1005 MIL-STD-202, DO-41 UG1005 DS27008 MARKING FZ UG1002 UG1003 UG1004 UG1005