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    thyristor ABB

    Abstract: 5STB 24N2800 ABB Semiconductors THYRISTOR
    Text: Key Parameters VSM = 2800 ITAVM = 2350 ITRMS = 3680 ITSM = 43000 VT0 = 0.85 rT = 0.160 Bi-Directional Control Thyristor V A A A V mΩ 5STB 24N2800 Doc. No. 5SYA 1041-02 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology


    Original     		PDF 24N2800 24N2800 24N2600 24N2200 CH-5600 thyristor ABB 5STB 24N2800 ABB Semiconductors THYRISTOR

    24N26

    Abstract: 5STB24N2800 ABB thyristor 5
    Text: VSM = 2800 V ITAVM = 2430 A ITRMS = 3820 A ITSM = 43000 A VT0 = 0.85 V rT = 0.160 mΩ Ω Bi-Directional Control Thyristor 5STB 24N2800 Doc. No. 5SYA1041-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


    Original     		PDF 24N2800 5SYA1041-03 24N2600 24N2200 CH-5600 24N26 5STB24N2800 ABB thyristor 5

    24N28

    Abstract: No abstract text available
    Text: VSM = 2800 V ITAVM = 2430 A ITRMS = 3820 A ITSM = 43000 A VT0 = 0.85 V rT = 0.160 mΩ Bi-Directional Control Thyristor 5STB 24N2800 Doc. No. 5SYA1041-03 Dec.00 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications


    Original     		PDF 24N2800 5SYA1041-03 24N2800 24N2600 24N2200 67xVSM CH-5600 24N28