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    24N50 Search Results

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    24N50 Price and Stock

    onsemi FDA24N50F

    MOSFET N-CH 500V 24A TO3PN
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    DigiKey FDA24N50F Tube 482 1
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    Avnet Americas FDA24N50F Tube 630 12 Weeks 30
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    Newark FDA24N50F Bulk 450
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    Rochester Electronics FDA24N50F 33 1
    • 1 $2.21
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    TME FDA24N50F 1
    • 1 $4.01
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    Richardson RFPD FDA24N50F 450
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    Avnet Silica FDA24N50F 330 13 Weeks 30
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    Chip One Stop FDA24N50F Tube 10
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    EBV Elektronik FDA24N50F 14 Weeks 30
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    Master Electronics FDA24N50F 900
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    HUBER+SUHNER 24_N-50-2-14-133_NE

    24_N-50-2-14/133_NE
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    DigiKey 24_N-50-2-14-133_NE Bulk 107 1
    • 1 $27.93
    • 10 $22.765
    • 100 $18.5623
    • 1000 $18.03752
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    Littelfuse Inc IXTH24N50L

    MOSFET N-CH 500V 24A TO247
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    DigiKey IXTH24N50L Tube 68 1
    • 1 $33.78
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    Newark IXTH24N50L Bulk 300
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    HUBER+SUHNER 24_N-50-4-21-199_NE

    RF CONNECTORS / COAXIAL CONNECTO
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    DigiKey 24_N-50-4-21-199_NE Box 25 1
    • 1 $106.29
    • 10 $94.192
    • 100 $106.29
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    HUBER+SUHNER 24_N-50-3-47-199_NE

    STAINLESS STEEL 316L N STRAIGHT
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    DigiKey 24_N-50-3-47-199_NE Box 25 1
    • 1 $412.79
    • 10 $343.2
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    Find more 24N50 price and stock on Findchips.com

    24N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    24_N-50-2-14/133_NE HUBER+SUHNER 24_N-50-2-14/133_NE Original PDF
    24_N-50-3-14/133_NE HUBER+SUHNER 24_N-50-3-14/133_NE Original PDF
    24_N-50-3-51/19-_NE HUBER+SUHNER 24_N-50-3-51/19-_NE Original PDF

    24N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ixf26n50q

    Abstract: 24N50 26N50Q 125OC ixf26N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		24N50Q 26N50Q 125OC 728B1 ixf26n50q 24N50 26N50Q 125OC ixf26N50 PDF

    24N50

    Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50 PDF

    26N50

    Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 26N50 IXFC 26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		24N50 24N50 QW-R502-533 PDF

    24N50

    Abstract: mosfet 24n50 24N50L-T47-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		24N50 24N50 QW-R502-533 mosfet 24n50 24N50L-T47-T PDF

    24N60

    Abstract: IXGH24N50B IXGH24N60B
    Text: HiPerFASTTM IGBT 24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		IXGH24N50B IXGH24N60B 24N50 24N60 O-247 IXGH24N60B PDF

    c2548

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera10 IXGH24N50BU1 c2548 IXGH24N60BU1 PDF

    ixfh26n50q

    Abstract: 26N50 IXFC 26N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		ISOPLUS220TM 26N50Q 24N50Q 220TM 26N50 24N50 ixfh26n50q IXFC 26N50 PDF

    26N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		ISOPLUS247TM 26N50 24N50 24N50 IXFR26N50 PDF

    26N50

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		ISOPLUS220TM 26N50Q 24N50Q 26N50 24N50 24N50 IXFC26N50Q PDF

    26N50Q

    Abstract: IXFH26N50Q 24N50Q
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol


    Original     		ISOPLUS247TM 26N50Q 24N50Q 24N50Q IXFR26N50Q IXFH26N50Q PDF

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET VDSS IXTH / IXTM 21N50 IXTH / IXTM 24N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		21N50 24N50 O-247 O-204 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTH 24N50Q IXTT 24N50Q Power MOSFETs Q-Class VDSS = 500 V = 24 A ID25 RDS on = 0.24 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		24N50Q O-247 728B1 123B1 728B1 065B1 PDF

    24n50l

    Abstract: No abstract text available
    Text: Advanced Technical Information Power MOSFETs for Linear Operation IXTH 24N50L VDSS = 500 V = 24 A ID25 RDS on = 0.30 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		24N50L O-247 728B1 123B1 065B1 24n50l PDF

    24N50

    Abstract: 24N50L-T47-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Preliminary Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		24N50 24N50 QW-R502-533 24N50L-T47-T PDF

    26n50q

    Abstract: ixfh26n50q IXFR26N50Q IXFR24N50Q 24n50q
    Text: HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q Electrically Isolated Back Surface VDSS ID25 500 V 24 A 500 V 22 A trr ≤ 250 ns RDS(on) 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		26N50Q ISOPLUS247TM 24N50Q 247TM E153432 IXFR26N50Q IXFR24N50Q IXFH26N50Q 26n50q IXFR26N50Q IXFR24N50Q 24n50q PDF

    IXTH24N50Q

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTH 24N50Q IXTT 24N50Q Power MOSFETs Q-Class VDSS = 500 V = 24 A ID25 RDS on = 0.24 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		24N50Q 728B1 123B1 728B1 065B1 IXTH24N50Q PDF

    GEM X 365

    Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
    Text: Prelim inary data HiPerFAST IGBT 24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ


    OCR Scan     		IXGH24N50B IXGH24N60B O-247 24N50 24N60 GEM X 365 24N60 zr smd PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information VDSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns 26N50 IXFR 24N50 Electrically Isolated Back Surface D S (on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Low trr, HDM O S™ Family


    OCR Scan     		ISOPLUS247â 26N50 24N50 IXFR26N50 PDF

    .24n50

    Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
    Text: Preliminary data HiPerFAST IGBT with Diode 24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C


    OCR Scan     		IXGH24N50BU1 IXGH24N60BU1 T0-247 24N50 24N60 .24n50 xgh2 IXGH24N60BU1 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500


    OCR Scan     		IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b PDF

    IXFH21N50

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500


    OCR Scan     		IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: H iPerFET P o w er M O S FE T IX F H 2 4 N 5 0 S VDSS I D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr a 500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . test Conditions v’ d s s


    OCR Scan     		1756C O-247 24N50S 24N50 D94010DE, 000520fl PDF