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    24V 20A SMPS Search Results

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    E-T-A SMPS-T-01-1-480-DC24V-20A

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    Mouser Electronics SMPS-T-01-1-480-DC24V-20A
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    24V 20A SMPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO4456

    Abstract: 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4456 AO4456 00A/us 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a

    AO4456

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4456 AO4456 Drain-Sou25 00A/us

    AOL1412L

    Abstract: SMPS 24V AOL1412 24v 5a smps
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1412 AOL1412 AOL1412L 00A/us SMPS 24V 24v 5a smps

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AOL1412 AOL1412 AOL1412L 00A/us

    Untitled

    Abstract: No abstract text available
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOD490 AOD490 O-252 000A/us

    AOL1702

    Abstract: No abstract text available
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1702 AOL1702 AOL1702L 000A/us 0E-06

    AOL1702

    Abstract: SRFE
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1702 AOL1702 SRFE

    AOD490

    Abstract: SRFE transistor free B60100
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOD490 AOD490 O-252 SRFE transistor free B60100

    Untitled

    Abstract: No abstract text available
    Text: AO4708 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4708 AO4708

    AON3702

    Abstract: 24V 10A SMPS 24v 5a smps 24V 20A SMPS 05S400
    Text: AON3702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AON3702 AON3702 AON3702is AON3702L AON3702L 00A/us 24V 10A SMPS 24v 5a smps 24V 20A SMPS 05S400

    Untitled

    Abstract: No abstract text available
    Text: AON3702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AON3702 AON3702is AON3702L 00A/us

    24v 2a smps

    Abstract: LT1170 boost converter 12v dc 24V 20A SMPS ZTX107 ZTX107 transistor 24v 5a smps LT1170 boost converter dc LT1170 SMPS 24V ZTX949
    Text: Design Note 33 Issue 1 April 1996 Isolating High Side Switch for Thermal Printer SMPS R1 L1 +12V d.c 60µH 68R 2.5W L2 D1 1N5821 Vin Vsw Q1 ZTX 949 +24V d.c 1.5µH R3 22k LT1170 Vfb Vc GND C1 68µF CONTROL SIGNAL 5.0V Q2 ZTX107 R6 C4 100µF C5 390µF C6 100µF


    Original     		PDF 1N5821 LT1170 ZTX107 LT1170 ZTX949 ZTX949 ZTX949, ZTX107. 24v 2a smps LT1170 boost converter 12v dc 24V 20A SMPS ZTX107 ZTX107 transistor 24v 5a smps LT1170 boost converter dc SMPS 24V

    Untitled

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us

    Untitled

    Abstract: No abstract text available
    Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4708 AO4708 AO4708L 000A/us 0E-06 0E-03

    AO4708

    Abstract: No abstract text available
    Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4708 AO4708 AO4708L Integ50 000A/us 0E-06

    Untitled

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us

    AOL1424

    Abstract: AOL1426 AOL1426L max3064
    Text: AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AOL1426 AOL1426 AOL1426L AOL1424 max3064

    ao4456

    Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31

    Untitled

    Abstract: No abstract text available
    Text: AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.


    Original     		PDF AOD496 AOD496 27ABC AOD490

    AO4456

    Abstract: No abstract text available
    Text: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4456 AO4456

    max3064

    Abstract: AOL1426 AOL1426L
    Text: AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AOL1426 AOL1426L max3064

    AOL1428L

    Abstract: AOL1428
    Text: AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AOL1428 AOL1428 AOL1428L

    AOD490

    Abstract: AOD496
    Text: AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.


    Original     		PDF AOD496 AOD496 O-252 AOD490 AOD490

    AOD496

    Abstract: No abstract text available
    Text: AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AOD496 AOD496 AOD496L O-252