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Untitled Abstract: No abstract text available Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load	Original	AOL1412 AOL1412 AOL1412L Figure15:	PDF
AOL1412L Abstract: AOL1412 Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side	Original	AOL1412 AOL1412/L AOL1412 AOL1412L -AOL1412L 00A/us	PDF
Untitled Abstract: No abstract text available Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,	Original	AOL1412 AOL1412 AOL1412L 00A/us	PDF
AOL1412L Abstract: SMPS 24V AOL1412 24v 5a smps Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load	Original	AOL1412 AOL1412 AOL1412L 00A/us SMPS 24V 24v 5a smps	PDF