FZ1600R12KF4
Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC
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600V/1700V
500V/3300V
50GB60DLC
75GB60DLC
100GB60DLC
150GB60DLC
200GB60DLC
300GB60DLC
FZ1600R12KF4
IGBT FZ 800
75GD120DN2
100GB170DN2
IGBT FZ 1200r16kf4
igbt driver
BSM10GD60DLC
FZ800R12KL4C
igbt 1600V 20A
eupec igbt BSM 100 gb
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ISOPLUS247
Abstract: IXFR40N90P 100A MOSFET ixys
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR40N90P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFR40N90P
300ns
40N90P
ISOPLUS247
IXFR40N90P
100A MOSFET ixys
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous ± 30 V VGSM Transient
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IXFL40N110P
300ns
40N110P
8-08-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 21A Ω 280mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C
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40N110P
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16-06A
Abstract: DSEA16-06AC 1606a
Text: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol
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DSEA16-06AC
ISOPLUS220TM
6A/DSEC16-06A
ISOPLUS220
16-06A
DSEA16-06AC
1606a
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MOSFET circuit welding INVERTER
Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
Text: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES
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thyristor k 202 russian
Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Text: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)
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SS15BL
M6x15
M6x10
thyristor k 202 russian
russian diode
kp20a 600v
kp20a
ZP20A
optothyristor
KP300A
KP200A
T143-630 SCR
zp5a
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A 3120V
Abstract: 205-3CC-DM-1 m7 diode 205-2CC-DM-3 205-3CC-DM-3 dm 0256 3120v led diode song chuan e419
Text: 205 SONG CHUAN Features □ DPDT ; TPDT General Purpose Power Relay. □ DC / AC Coil. □ Single or Twin contacts with / without gold plated. □ With position indicator, manual override and override level. □ Optional LED and protection diode. □ Comply with RoHS-Directive 2002/95/EC.
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2002/95/EC.
11PIN
205-2CC-D-1
205-2CC-DM-1
205-2CC-D-3
205-3CC-D-15-2C-DM-324VA
205-2CC-DM-3
24Vac
893-205-2CC-DM-324VD
A 3120V
205-3CC-DM-1
m7 diode
205-3CC-DM-3
dm 0256
3120v
led diode
song chuan
e419
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE ダイオードモジュール DF20NA80/160 ~ − 0.50±0.15 20.00±0.50 22.90±0.50 3.10 ＋0.20 −0.10 A（2：1） （0.10） （0.65） （0.25） （2.40） Tc point A （1.80） （0.20） （1.50） （2.10） （0.65） （0.25） bottom side
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DF20NA80/160
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205-3CC-DM-1
Abstract: 240VDC song chuan diode 66a song chuan 205 E88991 247A2
Text: SONG CHUAN 205 Features ϭ DPDT ; TPDT General Purpose Power Relay. ϭ DC / AC Coil. ϭ Single or Twin contacts with / without gold plated. ϭ With position indicator, manual override and override level. ϭ Optional LED and protection diode. ϭ Comply with RoHS-Directive 2002/95/EC.
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2002/95/EC.
205-2CC-D-3
205-2CC-DM-3
205-3CC-D-1
205-3CC-DM-1
11PIN
205-2CC-D-1
205-2CC-DM-1
205-3CC-D-3
205-3CC-DM-3
205-3CC-DM-1
240VDC
song chuan
diode 66a
song chuan 205
E88991
247A2
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GTO thyristor 1200V 50A
Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES
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MZC300
Abstract: No abstract text available
Text: MZC300 MZA300 MZK300 MZ300 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper
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MZC300
MZA300
MZK300
MZ300
415F3
MZK300
MKC300
415F3
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Untitled
Abstract: No abstract text available
Text: MZC400 MZA400 MZK400 MZ400 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper
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MZC400
MZA400
MZK400
MZ400
406F3
MZK400
MKC400Vs
406F3
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MZ-150
Abstract: MZ150
Text: MZC150 MZA150 MZK150 MZ150 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper
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MZC150
MZA150
MZK150
MZ150
413F3
Single150
MZ150
MZ-150
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TP100
Abstract: No abstract text available
Text: MZC200 MZA200 MZK200 MZ200 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper
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MZC200
MZA200
MZK200
MZ200
413F3
Single00
MZC200
MKC200
413F3
TP100
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MZ300
Abstract: No abstract text available
Text: MZC300 MZA300 MZK300 MZ300 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper
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MZC300
MZA300
MZK300
MZ300
405F3
MZK300
MKC300Vs
405F3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IC110
IXYJ20N120C3D1
108ns
O-247TM
E153432
IF110
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20N120C3
Abstract: No abstract text available
Text: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM
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IXYJ20N120C3D1
IC110
IF110
O-247TM
E153432
20N120C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYJ20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IF110
IXYJ20N120C3D1
108ns
O-247TM
E153432
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IXGR50N60C2
Abstract: No abstract text available
Text: HiPerFASTTM High Speed IGBT C2-Class w/ Diode IXGR50N60C2 IXGR50N60C2D1 VCES IC110 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V = = £ = 600V 36A 2.7V 48ns Maximum Ratings VGES
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IXGR50N60C2
IXGR50N60C2D1
IC110
ISOPLUS247TM
2x61-06A
50N60C2
IXGR50N60C2
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3 phase IGBT inverter
Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
Text: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,
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O-247
PLUS247TM,
120N20
26N50,
5A/1600V
0A/600V
30-06AR)
000V/20A
3 phase IGBT inverter
igbt 150v 30a
SMD DIODE BOOK
30N120D1
igbt 1600V 45A
40a 400v to-247
1600v 30A to247
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stk760
Abstract: RCC22 710a RB39 a10531 A1053 ITF02483 ITF02484 ITF02485 Rectification Active converter SANYO
Text: Ordering number : EN*A1053A Thick-Film Hybrid IC STK760-710A-E Single-phase Rectification PFC Hybrid IC Overview The STK760-710A-E is a power hybrid IC that incorporates active devices including a bridge diode, IGBT, FRD and a driver circuit necessary for configuring a power factor correction PFC circuit in the same package.
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A1053A
STK760-710A-E
STK760-710A-E
00V/15A
A1053-6/6
stk760
RCC22
710a
RB39
a10531
A1053
ITF02483
ITF02484
ITF02485
Rectification Active converter SANYO
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68w Transistor smd
Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W
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HG4100
HG4516
HG4507
HG4078B
SGR46G
125VAC
60VDC
150VDC
24VDC
68w Transistor smd
bbc 127 324 DIODE
TRANSISTOR SMD 13W
smd transistor yb
lamp indicator 115vac 400hz
18w smd transistor
RD 6BL
relay 12v 1c/o
kd smd transistor
SGR642H
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DIODE 20A 600V
Abstract: IT5 rectifier
Text: £ÿj SGS-THOMSON n0œilLI0ÎIM [iïlBCi STTB2006P I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 20A I f (a v ) V 600V rrm (typ) 55ns (max) 1.3V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA TIONS: Snubbing or clamping, demagnetization
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OCR Scan
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STTB2006P
DIODE 20A 600V
IT5 rectifier
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