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Text: Fair-Rite Product's Catalog Part Data Sheet, 2508051107Y0 Printed: 2008-08-25 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2508051107Y0 Frequency Range: Low Current Description:
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Text: Fair-Rite Product's Catalog Part Data Sheet, 2508051107Y0 Printed: 2013-07-03 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2508051107Y0 Frequency Range: Low Current Description:
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Abstract: No abstract text available
Text: Fair-Rite Product's Catalog Part Data Sheet, 2508051107Y0 Printed: 2010-11-09 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2508051107Y0 Frequency Range: Low Current Description:
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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marking WB4
Abstract: NIPPON CHEMI nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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2508051107Y0
Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
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MRF6P24190HR6
2508051107Y0
NIPPON CAPACITORS
T491D226K025AT
A114
A115
AN1955
C101
JESD22
MRF6P24190HR6
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NIPPON CAPACITORS
Abstract: 1825 - 0148
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these
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845 motherboard circuit
Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
Text: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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845 motherboard circuit
0603HC-10NXJB Coilcraft
Rogers 3006
NIPPON CAPACITORS
DVB-T acpr
dvbt transmitter
3A412
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Kappa current transformer catalog
Abstract: Mg-Zn Ferrites HF 13003 60424-1 clarke hess transformer EI lamination FERRITE TRANSFORMER 20khz toroid triac zo 109 ma Magnetic Products, Soft Ferrites, Data Handbook M permittivity Fair-Rite 61
Text: 1 15th Edition Table of Contents To search for a part number click on binocular icon above or click below for product category. Our Position on Quality and the .
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GRM55DR61H106KA88B
Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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GRM55DR61H106KA88B
2508051107Y0
NIPPON CAPACITORS
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A115
AN1955
C101
JESD22
MRF6P23190HR6
J3001
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NIPPON CAPACITORS
Abstract: capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L MRF9200LR3
Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these
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T491D106K010AT
Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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dvbt
dvbt transmitter
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3A412
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Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from
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Abstract: nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion
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capacitor 1825
Abstract: Nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600
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j655
Abstract: J691 2508051107Y0 400S A114 A115 AN1955 JESD22 MRF7S38040HR3 MRF7S38040HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF7S38040H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38040HR3 MRF7S38040HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to
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K 2645 schematic
Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600
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Abstract: 2506033007Y0 2508051107Y0 465B AN1955 MRF9200LR3 MRF9200LSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9200L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9200LR3 MRF9200LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
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Abstract: No abstract text available
Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
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Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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2512061027Y1
Abstract: 221206R33K7F 2512066017Y1 2508059007Y0 22080510RK7F 2206031R0K7F 2508056007Y0 2512061027Y0 2512063017Y0A4 ferrite rod antenna
Text: 27 15th Edition Board Components Fair-Rite Products Corp. PO Box J, One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 FAIR RITE / (845) 895-2055 • FAX: (888) FERRITE / (845) 895-2629 (888) 324-7748 (888) 337 -7483 • www.fair-rite.com • E-Mail: ferrites@fair-rite.com
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