8832
Abstract: No abstract text available
Text: ¡5 h a r r HM-QQ32 i s 32K x 8 Asynchronous CMOS Static RAM Module Features • • • • • • • • • • • • • Pinout TOP VIEW Full CMOS Six Transistor Memory Cell Low Standby Supply C u r re n t. 250fjA Low Operating Supply C u r r e n t. 15mA
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HM-QQ32
250fjA
180ns
8832
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC30U
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Untitled
Abstract: No abstract text available
Text: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve
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IRGB430U
O-220AB
0G20375
TQ-220AB
4ASS452
02037b
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure
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IRF9620/9621
IRF9622
F9621
IRF9620
IRF9621
IRF9623
IRF9620/9621Ã
Q01E57b
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PDF
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Untitled
Abstract: No abstract text available
Text: • Low Cost ■ 12-Bit Serial Sampling ADC ■ 8-Pin NSOIC Plastic Package ■ Low Power including Automatic Shutdown: 250pA ■ Programmable Input Configuration: Full differential or 2 channel single-ended ■ Single Suppply 3.0V to 5.5V operation ■ Half Duplex Digital Serial Interface
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12-Bit
250pA
SP8538
TheSP8538
BBIgr/SP9838/9410R0
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PDF
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F9222
Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Text: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance
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IRF9620/9621
IRFP9220/9221
IRF9220/9221
F9620/IR
IRF9220
IRF9621
/IRFP9221
IRF9221
F9622/IR
IRF9222
F9222
f 9222 l
ir 9621
f9223
F9222 L
F9222 T
IRFP9620
IRFP9220
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PDF
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irf9540
Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Text: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times
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41/y542/9543
IRFP9140/9141
-100V
IRF9541/Ã
RFP9141
IRF9542/IRFP9142
IRF9543/IRFP9143
O-220
irf9540
l 9143
irfp9140
IRFP9143
IRF9540 mosfet
IRF9541
9142
ha 9141
9143
15a 50v p-channel mosfet
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PDF
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IRF820
Abstract: IRF820.821 IRF822
Text: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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IRF820/821/822/823
IRF820
IRF821
IRF822
IRF823
IRF820.821
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PDF
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IRf 444 MOSFET
Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Text: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF9Z34/Z35
IRF9Z30/Z32
IRF9Z30
IRF9Z34
IRF9Z32
IRF9Z35
IRf 444 MOSFET
DIODE Z32
irf9z34 mosfet
IRF z34 MOSFET
IRF high current p-channel
P-channel power mosfet irf
IRf 444
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PDF
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Untitled
Abstract: No abstract text available
Text: D r w C .3 7 6 YA H ADVANCE INFORMATION Radiation Hardened Regulating Pulse Width Modulator Features Applications • Com plete PWM Power Control Circuitry • Positive Switching Regulators • • • • • • • • • Frequency Adjustable t o .290KHZ
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290KHZ
-3761R
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PDF
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K 3911
Abstract: n3220
Text: ' ZETEX SEMICONDUCTORS U U. I *aa •iSD D ^70570 0 0 0 5 7 1 e 3 ■ ZETB 95D 0 5 7 1 9 T-39-11 N-channel enhancement mode vertical DMOS FET ZV N 3220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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T-39-11
T0-220
ZVN3220L
O-220
K 3911
n3220
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PDF
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IRF1630
Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A
Text: PD-9.652A International SS Rectifier IRFI630G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^DSS - 200V ^DS on = 0 - 4 0 0 lD = 5.9A
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IRFI630G
RF1630G
IRF1630
irf1630g
IRF163
1RF16
59-A
9652A
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PDF
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CHN 535
Abstract: No abstract text available
Text: Single Output UNR Series Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features N ew lo w -vo ltag e m ic ro p ro c e s s o r a nd m e m o ry ch ip s are d rivin g th e m ig ra tio n from ce n tra lize d to d istrib u te d p o w e r p ro ce ssin g in m od e rn te le c o m m u n ic a tio n and
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t10/15W
20MHz
10-pin
CHN 535
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PDF
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YTF820
Abstract: No abstract text available
Text: YTF820 FELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE {»-MOS II INDUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. . 03.6 ±0.2 C HOPPER REGULATOR, DC-DC C O NVERTER AND MOTOR DRIVE APPLICATIONS.
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YTF820
250fjA
YTF820
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PDF
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Supersot6
Abstract: ld32a NDC651N 55sc
Text: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode
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NDC651N
bSD113D
Supersot6
ld32a
NDC651N
55sc
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PDF
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D-12
Abstract: IRGBC20U 12FFL
Text: P D - 9.681 A International S Rectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency {over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20U
O-220AB
D-12
12FFL
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PDF
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diode 4j
Abstract: No abstract text available
Text: P D - 9 .1 4 1 0 A International IOR Rectifier IRFP044N H E X F E T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55 V ^DS on = 0 .0 2 0 Q
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IRFP044N
O-247
diode 4j
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PDF
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MOSFET 50V 100A
Abstract: No abstract text available
Text: SSW/I4N60A Advanced Power MOSFET FEATURES b v dss - 600 V 2.5 Q • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.)
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SSW/I4N60A
Fig14.
G040bfi2
MOSFET 50V 100A
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PDF
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IRF510
Abstract: IRF510 MOSFET IRF512 irf510 ir 05b diode
Text: N-CHANNEL POWER MOSFETS IRF510/511/512/513 FEATURES • • • • • • • Lo w er R ds on Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lysilico n g a te cell s tru ctu re Lo w er in p u t c a p a c ita n c e E x te n d e d sa fe o p e ra tin g area
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OCR Scan
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IRF510/511/512/513
IRF510
IRF512
IRF513
IRF510 MOSFET
irf510 ir
05b diode
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PDF
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pj 68 SMD diode
Abstract: smd diode code pj 70 smd diode code pj smd diode code pj 50 smd diode code pj 24 st smd diode marking code smd marking code pj smd diode code pj 40 smd diode pj 55 smd diode code pj 65
Text: PD-9.1006 International S Rectifier IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration HEXFETs from International Rectifier provide the designer
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IRF644S
SMD-220
1018witty
47D1484.
pj 68 SMD diode
smd diode code pj 70
smd diode code pj
smd diode code pj 50
smd diode code pj 24
st smd diode marking code
smd marking code pj
smd diode code pj 40
smd diode pj 55
smd diode code pj 65
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PDF
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IRF341R
Abstract: No abstract text available
Text: [2 HARRIS IR F 3 4 0 /3 4 1 /3 4 2 /3 4 3 IR F 340R /341 R /3 4 2 R /343R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 9 1 P a ck a g e F e a tu re s T O -2 0 4 A A BOTTOM VIEW • 10A and 8.3A, 400V - 350V • rDS on = 0.55H and 0 .8 0 ÎÎ
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OCR Scan
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/343R
IRF340,
IRF341,
IRF342,
IRF343
IRF340R,
IRF341R,
IRF342R,
IRF343R
plc/lRF/34Q/
IRF341R
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PDF
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IXTP7N50
Abstract: 7n50r 7N45 7N50 IXTM7N45 IXTM7N50 IXTP7N45
Text: I X Y S CORP □ I X Y lflE I> • IX T P 7 N 4 5 , S 4bflbS2b OOOQbl4 0 ■ IX T P 7 N 5 0 , IX T M 7 N 4 5 , IX T M 7 N 5 0 7 A M P S , 4 5 0 -5 0 0 V, 0.85Q/1.10S2 M AXIM UM RATINGS 'T '- Z a Parameter Sym. Drain-Source Voltage 1 IXTP7N45 IXTM7N45 IXTP7N50
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4bfltj22fcj
IXTP7N45,
IXTP7N50,
IXTM7N45,
IXTM7N50
85Q/1
IXTP7N45
IXTM7N45
IXTP7N50
IXTM7N50
IXTP7N50
7n50r
7N45
7N50
IXTM7N45
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PDF
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IRF330
Abstract: No abstract text available
Text: 7964142 - í « S ^ M S U N G S E M IC O N D U C T O R D E I TTtiMms D D D S i m IN C 9 8 D 0 5114 7 “ D 7 ^ 3 7 -// N-CHANNEL POWER MOSFETS IRF330/331Z332/333 FEATURES • • • • • • • • Low RDS on Improved inductive ruggedness Fast switching times
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OCR Scan
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IRF330/331Z332/333
IRF330
IRF331
IRF332
IRF333
OOGS43S
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PDF
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f15p06
Abstract: TA09833 15A60 15A60V
Text: in te r r ii RFD15P06, RFD15P06SM, RFP15P06 Data S h e e t J u ly 1999 Features 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A.60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD15P06,
RFD15P06SM,
RFP15P06
TA09833.
0-150Q
RFP15P06
AN7254
AN7260.
f15p06
TA09833
15A60
15A60V
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PDF
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