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    250V 10A MOSFET Search Results

    250V 10A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2192WP-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 10A 230Mohm Wpak Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    250V 10A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RCX100N25

    Abstract: No abstract text available
    Text: RCX100N25 RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


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    RCX100N25 320mW O-220FM R1120A RCX100N25 PDF

    Untitled

    Abstract: No abstract text available
    Text: RCX100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


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    RCX100N25 320mW O-220FM R1120A PDF

    12SW

    Abstract: No abstract text available
    Text: RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


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    RCX100N25 320mW O-220FM R1120A 12SW PDF

    Untitled

    Abstract: No abstract text available
    Text: RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


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    RCJ100N25 320mW SC-83) R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


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    RCJ100N25 320mW SC-83) R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RCJ100N25 RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


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    RCJ100N25 320mW SC-83) R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


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    RCJ100N25 320mW SC-83) R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2339 NDDP010N25AZ Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 10A, 420mΩ, DPAK/IPAK Features Electrical Connection • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • 100% Avalanche Tested


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    A2339 NDDP010N25AZ A2339-6/6 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides


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    IRHNJ57234SE PDF

    IRHNJ57234SE

    Abstract: smd diode 64A
    Text: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides


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    IRHNJ57234SE IRHNJ57234SE smd diode 64A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides


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    PD-93837C IRHNJ57234SE MIL-STD-750, MlL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides


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    PD-93837C IRHNJ57234SE MIL-STD-750, MlL-STD-750, PDF

    IRHNJ57234SE

    Abstract: JANSR2N7487U3 smd diode 64A
    Text: PD - 93837A IRHNJ57234SE JANSR2N7487U3 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/704 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level 100K Rads (Si) RDS(on) 0.40Ω ID 10A QPL Part Number


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    3837A IRHNJ57234SE JANSR2N7487U3 MIL-PRF-19500/704 estab394A/ MIL-STD-750, MlL-STD-750, IRHNJ57234SE JANSR2N7487U3 smd diode 64A PDF

    IRHY57234CMSE

    Abstract: T0-257AA
    Text: PD - 93823 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41Ω 10A TO-257AA International Rectifier’s R5TM technology provides


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    O-257AA) IRHY57234CMSE IRHY57234CMSE O-257AA MIL-STD-750, MlL-STD-750, T0-257AA PDF

    mosfet 10V 10A

    Abstract: 250v 10A mosfet FS20KMA-5A
    Text: MITSUBISHI Nch POWER MOSFET ARY FS20KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2


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    FS20KMA-5A mosfet 10V 10A 250v 10A mosfet FS20KMA-5A PDF

    FS10UM5

    Abstract: FS10UM-5 08GS
    Text: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 • V d s s . 250V • ros ON (MAX) . 0.52Í2 • Id . 10A


    OCR Scan
    FS10UM-5 FS10UM5 FS10UM-5 08GS PDF

    Untitled

    Abstract: No abstract text available
    Text: L V X v U -X A 7 -M 0 S F E T LVX Series Power MOSFET 2SK1394 I W & T ffe m OUTLINE DIMENSIONS FP10V25 250V 10A • A ± l S * (C is s ) Ö ''M U V I C l* D A V 7 ’ 7 . f ê f f i A * g  ô î^ â : l A •s m m w -M eti-an, smmssmcoDc/Dc□ v a-s*


    OCR Scan
    2SK1394 FP10V25) PDF

    DIODE KIV 4

    Abstract: DIODE KIV 074I K1393 diode KIV 41 2SK1393 F10V25 DIODE KIV 2
    Text: LVXS/'J-X M7-M0SFET LVX SERIES POWER MOSFET WM-j-iim O U T L IN E D IM E N S IO N S 2SK1393 F10V25 250v 10a • Æ fê S i R A TIN G S ■ A b s o lu te M axim u m R a tin g s m Ite m g ft y- S to ra g e T e m p e ra tu re Tsit; C h annel T e m p e ra tu re


    OCR Scan
    2SK1393 F10V25) O-220 K1393 DIODE KIV 4 DIODE KIV 074I diode KIV 41 2SK1393 F10V25 DIODE KIV 2 PDF

    v1h diode

    Abstract: 2SK1394 FP10V25 ITO-220 current source 5A ac D 4602
    Text: I LVXv'J-X / f 7-M 0SFET LVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1394 FP10V25 I 250V 10A • Æ f ê ii RATINGS A b s o lu te M axim u m R a tin g s m :Ìll V Sym bol h Ite m 0k f t C o n d itio n s & I & m R a tin g s 'H f* U n it S to r a g e T e m p e ra tu r e


    OCR Scan
    2SK1394 FP10V25) ITO-220 v1h diode 2SK1394 FP10V25 ITO-220 current source 5A ac D 4602 PDF

    F10V25

    Abstract: No abstract text available
    Text: LV X ^U -X / 19-MOSFET LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1393 F 1 0 V 2 5 250V 10A ■ R A TIN G S ■ A b s o lu te M a x im u m « a R a tin g s BË ^ S y m b ol Ite m m & C o n d itio n s M R a tin g s m Ä it . U n it f 7tì~ i m j l :


    OCR Scan
    19-MOSFET 2SK1393 F10V25) F10V25 PDF

    F10V25

    Abstract: mosfet stk 2SK1393 TO-220-4
    Text: LVXvU -X /\° 7 —MOSFET LVX S e rie s P o w e r M O S FE T 2SK1393 o u t l in e d im e n s io n s [F10V25] 250V 10A • A i Ä Ciss !g ic ifn ;w ;p ;* B A 2 ® « tf'J \£ U o •X'f 'y^y-y-P-lA f f i S U V m it • 3 c 8 S M « S •thlJsäf, S J M is 5 l? ® D C /D C I)V A -5


    OCR Scan
    2SK1393 CF10V25] 2-48VA O-220 F10V25 mosfet stk 2SK1393 TO-220-4 PDF

    250v 10A mosfet

    Abstract: MOSFET 250V 10A
    Text: MITSUBISHI Nch POWER MOSFET -sas— FS20UMA-5A soW HIGH-SPEED SWITCHING USE FS20UMA-5A OUTLINE DRAWING © Dimensions in mm o@© © GATE © DRAIN ©SOURCE © DRAIN • 10V DRIVE . 250V


    OCR Scan
    FS20UMA-5A O-220 250v 10A mosfet MOSFET 250V 10A PDF

    250v 10A mosfet

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W>^ FS20KMA-5A »ft fin*' slljü\ecl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FS20KMA-5A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 250V


    OCR Scan
    FS20KMA-5A FS20KMA-5A O-220FN 200jiH 250v 10A mosfet PDF

    250v 10A mosfet

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W>^ FS20UMA-5A »ft fin*' slljü\ecl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm o @ • 10V DRIVE • V d s s . 250V


    OCR Scan
    FS20UMA-5A FS20UMA-5A O-220 250v 10A mosfet PDF