YTF610
Abstract: No abstract text available
Text: YTF610 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR' 10.3 MAX. 0 3 .6 i 0.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance
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YTF610
250yA
YTF610
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Untitled
Abstract: No abstract text available
Text: TOSHIBA íDISCRETE/OPTOJ T i T D T 7 E S G 9097250 TOSHIBA DISCRETE/OP' tfoâtiïba. 99D 16876 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR - DDlbñVb Y T F 6 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (TT-hosh Y - s q - ' / } HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: TD62001F TD62002R S I UDcUUür, IUu£uU4 r - BIPOLAR DIGITAL INTEGRATED CIRCUIT S ilic o n m o n o lit h ic TD62001F TD62002F TD62003F TD62004F DARLINGTON DAR LINGTON DAR LINGTON DARLINGTON T n C O n f lO C T n C O H /lV lC DRIVER DRIVER DRIVER DRIVER
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TD62001F
TD62002R
TD62001F
TD62002F
TD62003F
TD62004F
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24v rectifier j8
Abstract: irp740 IRF71Q
Text: International XQR Rectifier PO 9 .1 5 6 2 IRF9410 PRELIMINARY HEXFET Power M O S FET • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V pss = 30V
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IRF9410
24v rectifier j8
irp740
IRF71Q
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smd diode S6 66a
Abstract: REGULATOR SMD MARKING CODE ASC
Text: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching
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1269E
IRF7507
A135OE
smd diode S6 66a
REGULATOR SMD MARKING CODE ASC
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Untitled
Abstract: No abstract text available
Text: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier
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IRF7313
muttiple-diEiA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel
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1270F
IRF7509
7355B
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74f740
Abstract: 74F5074D
Text: Philip* Semlconductora-Signetic* FAST Producto Product »pacification Synchronizing dual J - K positive edge-triggered flip-flop with metastable immune characteristics FEATURE • Pinout compatible with 74F109 • Metastable immune characteristics • Output skew guaranteed less than 1.5ns
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74F50109
74F109
74F5074
74F50728
See74F50729
150MHz
500ns
74f740
74F5074D
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B85 diode
Abstract: DIODE B89 IRGPC50KD2
Text: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features
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IRGPC50KD2
-10jj3
O-247AC
B85 diode
DIODE B89
IRGPC50KD2
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Transistor 75Y
Abstract: No abstract text available
Text: TOSHIBA {DISCRE TE/ OPTO} 9097250 T O S H IB A tfoáftiba. COI S C R E T E /O P T O Ti DE I TCH72SG 99D 16876 □□lbfl7b D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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I1CH725G
0-14ft
l00nA
250uA
250uA
1S-18A
00A/us
Transistor 75Y
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Untitled
Abstract: No abstract text available
Text: SAFETY ORGANIZATIONS RELIABILITY SPECIFICATIDNS: THIS FILTER HAS BEEN FEKMAl l Y RECOGNIZED. CERTIFIED I F APPROVED BY TIE LISTED AffiNCY. ThEREFtKE. Al l TEST/REIllIREteNTS SPECIFIED IN TIE LATEST R EV IS IT IF T « FQ.LD*lNG AffiNCY ST«f]ARDS HAVE BEEN feT:
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attv40Â
50yac
50-bchz
I17NDVQ6
95ZRH.
9SEP89
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Untitled
Abstract: No abstract text available
Text: SSH6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 £2 < CD Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (M ax) @ Low Rdsjon) •*1-552 £2 (Typ.)
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SSH6N70A
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D745
Abstract: No abstract text available
Text: IRFS720A Advanced Power MOSFET FEATURES bvdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA M ax. @ VDS= 400V ■ Lower RDS(ON) : 1.408 £2 (Typ.)
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IRFS720A
D745
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1RFZ46N
Abstract: IC 282 SD28A 1rfz46 IRFZ46N IQR9246 IRF1010 marking rur. diode BBV marking MOSFET IRFZ46N
Text: International rai Rectifier PD - 9.1277B IRFZ46N PRELIMINARY HEXFET Power M O SFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V R o s o n = 0 . 0 2 0 Q lD = 46A Description
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1277B
IRFZ46N
O-220
resistR9246
1RFZ46N
IC 282
SD28A
1rfz46
IQR9246
IRF1010
marking rur. diode
BBV marking
MOSFET IRFZ46N
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Untitled
Abstract: No abstract text available
Text: TLP2630 GaAÄAs IRED & PHOTO-IC DEGITAL LOGIC ISOLATION. TELE-COMMUNICATION. ANALOG DATA EQUIPMENT CONTROL. MICROPROCESSOR SYSTEM INTERFACE. The TOSHIBA TLP2630 dual photocoupler consists of a pair of GaA£As light emitting diode and integrated high gain, high speed photodetector.
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TLP2630
TLP2630
2500Vrms
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Untitled
Abstract: No abstract text available
Text: TOSHIBA OISCRETE/OPTOJ 9097250 TOSHIBA TT D I S C R E TE/OPTO dF | T D T V a S D DülbflEO S 1 ~ 99D 16820 D~p-39-i3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Tl-MOS E) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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p-39-i3
100nA
250uA
250yA
SYM30L
00A/us
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PDF
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Untitled
Abstract: No abstract text available
Text: 4SE D • *10^7250 G G 1 7 7 b cl 3 ■ T0S 4 TOSHIBA TRANSISTOR_ SILICON PNP EPITAXIAL TYPE PCT PROCESS TOSHIBA 2N5400 (DISCRETE/OPTO) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown : VCBO=-130V,
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2N5400
-130V,
-120V
-100V
-50mA,
-250yA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O l 9097250 TO S H IB A TI < D IS C R E T E /O P T O DE I ÌCH725G 99D 16798 □□IbTTfl S CTT-3>q-l3 TOSHIBA FIELD EFFECT TRANSISTOR Toshiba SEMICONDUCTOR Y T F 2 4 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA % -MOS I)
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CH725G
100nA
250uA
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TRANSISTOR 132-gd
Abstract: LD2-5A transistor D 982 250/TRANSISTOR 132-gd
Text: YTF622 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. . 0 3 . 6 ¿ 0 . 2 DRIVE APPLICATIONS. s t'» lcj
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YTF622
250MA
TRANSISTOR 132-gd
LD2-5A
transistor D 982
250/TRANSISTOR 132-gd
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PDF
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I1092
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1289B International IOR Rectifier HEXFET PO W E R M O S F E T IR FY240C M N-CHANNEL Product Summary 200Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors. The effi
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1289B
FY240C
200Volt,
6C730
I1092
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Untitled
Abstract: No abstract text available
Text: bitemational ^Rectifier PD - 9.1098B IR F 7106 PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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1098B
S5M52
IRF7106
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PDF
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VQE 24
Abstract: IRG4PC40UD
Text: International IGR Rectifier PD 9.1467C IRG4PC40UD P R B iM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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1467C
IRG4PC40UD
O-247AC
VQE 24
IRG4PC40UD
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PDF
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MAX1004
Abstract: MX7582
Text: A/D Converters Ultra-High-Speed Conversion d p s 4 Bits Fast Conversion (<100ps) (SAR/Flash A D C s) 8 Bits External T/H — 10 Bits Single Channel see next page for Slow Conversion (>1 Oms) 12 Bits Single Channel - 14 Bits Single Channel 16 Bits Internal T/H
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100ps)
MAX1001
60Msps)
MAX1004
90Msps)
AX150
34ps/ref)
AX152
AX153
AX165
MAX1004
MX7582
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PDF
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IRF4905
Abstract: IRF4905 P-channel power
Text: PD - 9.1280B International IQ R Rectifier IRF4905 PRELIMINARY HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Ultra Low On -Resistance D ynam ic dv/dt Rating 17 5 °C Operating Tem perature Fast Switching P-C hannel Fully A valanche Rated
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1280B
IRF4905
IRF4905
IRF4905 P-channel power
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