STT251
Abstract: TT251N TT 251 N 14
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 251 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 251 N, TD 251 N, DT 251 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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PRO266
Abstract: W83176R-251 W83194BR-250 ddr-7-t
Text: W83176R-251 DDR/SDRAM BUFFER FOR VIA PRO266 CHIPSET 1.0 GENERAL DESCRIPTION The W83176R-251 is a 2.5V/3.3V Clock buffer designed for VIA Pro266 chipset. W83176R-251 can support 4 D.D.R. DRAM DIMMs or 2 standard SDRAM and 2 D.D.R. DRAM DIMMs. W83176R-251 can be incorporated with W83194BR-250 which is the step-less clock with free
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W83176R-251
PRO266
W83176R-251
W83194BR-250
ddr-7-t
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msc251
Abstract: msc250 MSC-251
Text: MagnaChip Semiconductor Library Team MSC250/251 Description MSC250/251 library is 0.25-micron cell base library which supports 3LM, 4LM, 5LM and stacked vias to enable extremely high density. MSC250/251 library is suitable for today’s complex design requirements including small
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MSC250/251
MSC250/251
25-micron
msc251
msc250
MSC-251
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273102
Abstract: "8x930Hx"
Text: C Program Library for PLC Compass/251 C program library For Production Language Corporation’s PLC Compass/251 USB software Author: Walter Banks, Jr. Tuesday, December 16, 1997 C Program Library for PLC Compass/251 Information in this document is provided in connection with Intel products. No license, express or
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Compass/251
Compass/251
8x930hx
273102
"8x930Hx"
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR NPN TO-251 FEATURES z Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE 2.COLLECTOR z Electrically Simiar to MJE3055
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O-251
MJD3055
O-251
MJE3055
500KHZ
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD41C TRANSISTOR NPN TO-251 FEATURES z Designed for General Purpose Amplifier and Low Speed Switching Applications. z Lead Formed for Surface Mount Applications in Plastic
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O-251
MJD41C
O-251
TIP41
TIP42
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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O-251-3L
3DD13001
O-251-3L
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TO-251 B772
Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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O-251
O-251
-100A
10MHz
TO-251 B772
br b772
TRANSISTOR b772
B772
TRANSISTOR br b772
B772 equivalent
B772 PNP
b772 transistor
transistors b772
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR NPN TO – 251 FEATURES z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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O-251
2SC2983
100mA
500mA
500mA
100mA,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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O-251
O-251
10MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value
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O-251/TO-252-2L
2SB1412
O-251
O-252-2L
-500mA
-100mA
-50mA
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR NPN TO – 251 FEATURES z Low Collector-to-Emitter Saturation Voltage z Excellent Linearity of hFE z High Transition Frequency z Fast Switching Time
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O-251
2SD1815
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors TO-251-3L/TO-252-2L 3DD13003 TRANSISTOR NPN FEATURES Power Switching Applications MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted) Symbol Parameter
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O-251-3L/TO-252-2L
O-251-3L/TO-252-2L
3DD13003
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit
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O-251
O-251
-10mA
10MHz
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intel chips 8x930
Abstract: C-CAP "8x930Hx"
Text: C Program Library for TASKING Inc. MCS 251 8x930 USB C program library ® For TASKING Inc. MCS 251 8x930 USB software Author: Walter Banks, Jr. Friday, January 20, 1998 01/20/98 Page 1 of 33 ® C Program Library for TASKING Inc. MCS 251 8x930 USB Information in this document is provided in connection with Intel products. No license, express or
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8x930
Reg930hx
intel chips 8x930
C-CAP
"8x930Hx"
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD02N60
O-251
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD01N60
O-251
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TRANSISTOR D882
Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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O-251
O-251
10MHz
TRANSISTOR D882
D882
D882 TRANSISTOR
br d882
TRANSISTOR br D882
transistor D882 datasheet
d882 power transistor
datasheet d882
1a60
d882 npn transistor
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2SB1182
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1182 TO-251 TO-252-2 TRANSISTOR PNP FEATURES Power dissipation 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value
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O-251/TO-252-2Plastic-Encapsulate
2SB1182
O-251
O-252-2
-500mA
-200mA
30MHz
2SB1182
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CJ78M09
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors CJ78M09 Three-terminal positive voltage regulator TO-251 TO-252-2L FEATURES Maximum Output current IOM: 0.5 A Output voltage Vo: 9V Continuous total dissipation
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O-251/TO-252-2L
CJ78M09
O-251
O-252-2L
350mA
200mA
O350mA
100KHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Regulators CJ78M05 Three-terminal positive voltage regulator TO-251 TO-252-2L FEATURES Maximum output current IOM: 0.5 A Output voltage VO: 5V Continuous total dissipation
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O-251/TO-252-2L
CJ78M05
O-251
O-252-2L
350mA,
Paramete50
200mA
350mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3CA753 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power dissipation 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO
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O-251/TO-252-2L
3CA753
O-251
O-252-2L
-10mA
-500mA
-200mA
-30mA
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Untitled
Abstract: No abstract text available
Text: 6,1 P C -Board layout view component side thickne ss 1,6 mm 2,9 Connection retention and insertion fo rce s on the PCB = 25 / 80 N 09 66 251 3533 M3 1 09 66 251 6533 M3 2 09 66 251 7533 M3 3 09 66 251 3513 4 -4 0 UNC 1 09 66 251 6513 4 -4 0 UNC 2 09 66 251 7513
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OCR Scan
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D-32339
15-poles
0966251X5X3
100566511/UG
D/001/A
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251-1544
Abstract: ocxo 251 1011Hz OCXO 93 8.192
Text: 251 Series OCXO High Stability Int’l Footprint! STD PIN ASSIGNMENTS ELEC TUNING IN REF VOLTAGE OUT Specifications 251-1504 5 SC 1.00E-08 1.00E-10 3.00E-08 251-1545 8.192 AT 1.00E-07 3.00E-09 5.00E-07 251-1502 10 SC 1.50E-08 1.00E-09 1.00E-07 -130 -140 -150
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00E-08
100Hz
00E-09
00E-07
00E-11
00E-08
00E-10
00E-12
5e-09
251-1544
ocxo 251
1011Hz
OCXO 93 8.192
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