HY62U8200LST
Abstract: No abstract text available
Text: HY62V8200- I /HY62U8200-(I) Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(I) uses high performance CMOS process technology and
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HY62V8200-
/HY62U8200-
256Kx8bit
HY62U8200-
32pin
8x20mm
HY62U8200LST
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PDF
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TSOPI
Abstract: No abstract text available
Text: HY62V8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is
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HY62V8200B
256Kx8bit
32-sTSOPI-8X13
32-TSOPI
-8X20
32pin
TSOPI
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62UF8200A/ HY62QF8200A/ HY62EF8200A/ HY62SF8200A Series 256Kx8bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention
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HY62UF8200A/
HY62QF8200A/
HY62EF8200A/
HY62SF8200A
256Kx8bit
48ball
HY62UF8200A
HY62QF8200A
HY62EF8200A
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62V8200 Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200 is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200 uses high performance CMOS process technology and designed for high speed low power circuit technology. It is
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HY62V8200
256Kx8bit
32-sTSOPI-8X13
32-TSOPI
-8X20
32pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62V8200 Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP
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HY62V8200
256Kx8bit
32pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62U8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA => 30mA Jul.29.2000 Final
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HY62U8200B
256Kx8bit
HY62U8200B
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PDF
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buffer cmos 1.8V
Abstract: No abstract text available
Text: HY62UF8200/ HY62QF8200/ HY62EF8200/ HY62SF8200 Series 256Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention • Standard pin configuration
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HY62UF8200/
HY62QF8200/
HY62EF8200/
HY62SF8200
256Kx8bit
HY62UF8200
HY62QF8200
HY62EF8200
buffer cmos 1.8V
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PDF
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hy62u8200bll
Abstract: No abstract text available
Text: HY62U8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62U8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is
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Original
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HY62U8200B
256Kx8bit
32-sTSOPI-8X13
32-TSOPI
-8X20
32pin
hy62u8200bll
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62U8200 Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 10 Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 30mA Change the Notch Location of sTSOP
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Original
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HY62U8200
256Kx8bit
32pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Jul.29.2000 Final 04
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HY62V8200B
256Kx8bit
HY62V8200B
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PDF
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256Kx8bit
Abstract: No abstract text available
Text: HY62UF8200/ HY62QF8200/ HY62EF8200/ HY62SF8200 Series 256Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8200 / HY62QF8200 / HY62EF8200 / HY62SF8200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 262,144 words by 8bits. The HY62UF8200 /
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HY62UF8200/
HY62QF8200/
HY62EF8200/
HY62SF8200
256Kx8bit
HY62UF8200
HY62QF8200
HY62EF8200
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PDF
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HY62U8200LLST
Abstract: No abstract text available
Text: HY62U8200 Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8200 is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62U8200 uses high performance CMOS process technology and designed for high speed low power circuit technology. It is
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Original
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HY62U8200
256Kx8bit
32-sTSOPI-8X13
32-TSOPI-8X20
32pin
HY62U8200LLST
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PDF
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HT27C020
Abstract: 2048k eprom
Text: HT27C020 OTP CMOS 256Kx8-Bit EPROM Features • • • • • • • • Operating voltage: +5.0V Programming voltage – VPP=12.5V± 0.2V – VCC=6.0V± 0.2V High-reliability CMOS technology Latch-up immunity to 100mA from -1.0V to VCC+1.0V CMOS and TTL compatible I/O
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HT27C020
100mA
-70ns,
-90ns
-120ns
32-pin
HT27C020
2048K
2048k eprom
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PDF
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IN3064
Abstract: V29LC51002
Text: MOSEL VITELIC V29LC51002 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ The V29LC51002 is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The
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V29LC51002
V29LC51002
256Kx8-bit
IN3064
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PDF
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HT27LC020
Abstract: No abstract text available
Text: HT27LC020 OTP CMOS 256Kx8-Bit EPROM Features • • • • • • • • • • • • • • Operating voltage: +3.3V Programming voltage – VPP=12.5V±0.2V – VCC=6.0V±0.2V High-reliability CMOS technology Latch-up immunity to 100mA from -1.0V to
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HT27LC020
100mA
-120ns
32-pin
HT27LC020
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PDF
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IN3064
Abstract: SYNCMOS s29c51002t
Text: SyncMOS Technologies Inc. S29C51002T/S29C51002B 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ TheS29C51002T/S29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt
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S29C51002T/S29C51002B
TheS29C51002T/S29C51002B
S29C51002T/S29C51002B
IN3064
SYNCMOS
s29c51002t
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PDF
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Untitled
Abstract: No abstract text available
Text: M y Ti I g. R h - h U R KIIII HY62UF8200/ HY62QF8200/ HY62EF8200/ HY62SF8200 Series 256Kx8bit fuii c m o s s r a m PRELIMINARY DESCRIPTION FEATURES The HY62UF8200 / HY62QF8200 / HY62EF8200 / HY62SF8200 is a high speed, super low power and 2M bit full CMOS SRAM organized as
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HY62UF8200/
HY62QF8200/
HY62EF8200/
HY62SF8200
256Kx8bit
48ball
HY62UF8200
HY62QF8200
HY62EF8200
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PDF
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HY62U8200LLST
Abstract: No abstract text available
Text: HY62V8200- I /HY62U8200-{I) Series 256KX8bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(i) uses high performance CMOS process technology and
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OCR Scan
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HY62V8200-
/HY62U8200-
256KX8bit
HY62U8200-
32pin
8x20mm
4mm8x20mm
HY62U8200LLST
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PDF
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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OCR Scan
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256Kx4-bit,
1MX16BIT
16MX1
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PDF
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29c51002
Abstract: No abstract text available
Text: M OSEL VITELIC V29C51002T/V29C51002B 2 MEGABIT 262,144x8-BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt
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OCR Scan
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V29C51002T/V29C51002B
144x8-BIT)
256Kx8-bit
100yA
29c51002
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PDF
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256Kx16bit
Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V
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GM76C256C
GM76V256C
GM76U256C
GM76C256CW
HY62CT08081E
HY62WT08081E
HY62K
T08081E
32Kx8-bit,
256Kx16bit
128KX16
HY628100B
512kx16bit
SRAM
SRAM 256kx16
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.
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8225716-xxOB1
TheMTC8225716-150Bl
MTC8225716-200B1
256Kbytes
68pins
CR2025
1S96G
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED 256KX8 FLASH MODULE FEATURES • Access times of 55, 70, 90ns • Built in decoupling caps for low noise operation • Organized as 256Kx8 • Operation with single 5 volt supply • Low power CMOS • TI L Compatible Inputs and Outputs • Packaging
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256KX8
256Kx8
AS7F256K8
256Kx8-bits.
128Kx8
MIL-STD-883,
AS7F256K8CW15M
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PDF
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TG3110
Abstract: No abstract text available
Text: HOLTEK HTG3110 Simple Voice Player Features • • • • • • • O perating frequency: 256kH z of RC oscillator O perating voltage: 2.4V~5.2V A utom atic power-on p lay with no standby mode Auto playback unlim ited One channel for voice output A 256xl0-bit |lROM of 8 to 10-bit |i-law table
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256kH
256xl0-bit
10-bit
HTG3110
10-bit
128Kx8-bit/256Kx8-
16-pin
require8050
TG3110
180kQ
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PDF
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