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    256K X 16 SRAM Search Results

    256K X 16 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71128S12YG Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    71128S15YG Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    71128S20Y8 Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    7MP4045S15Z Renesas Electronics Corporation 256K X 32 SRAM MODULE Visit Renesas Electronics Corporation
    7MP4045S45Z Renesas Electronics Corporation 256K X 32 SRAM MODULE Visit Renesas Electronics Corporation

    256K X 16 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5v rs232 UART interface

    Abstract: db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM RS530 xcvr 256K X 16
    Text: Am186TMCC/CH/CU Customer Development Platform Main Board Memory Interface Expansion Interface 256K x 16 SRAM SRAM/ICE Socket Am186 Expansion Bank 1 256K x 16 DRAM SRAM/ICE Socket Bank 0 256K x 16 DRAM 1 MByte Flash Memory Am186 Expansion Development Module


    Original     		PDF Am186TMCC/CH/CU Am186 RS422 RS530 160-PQFP 5v rs232 UART interface db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM xcvr 256K X 16

    72256A16

    Abstract: GVT72256A16
    Text: ADVANCE INFORMATION GALVANTECH, INC. GVT72256A16 REVOLUTIONARY PINOUT 256K X 16 ASYNCHRONOUS SRAM 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT72256A16 is organized as a 262,144 x 16


    Original     		PDF GVT72256A16 GVT72256A16 72256A16

    Untitled

    Abstract: No abstract text available
    Text: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBATM SRAM Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History History Issue Date Remark 0.0 Initial issue March 11, 1999 Preliminary 0.1


    Original     		PDF A67L8316/A67L8318/ A67L7332/A67L7336 117/100/83MHz)

    A67L7332

    Abstract: A67L7336 A67L8316 A67L8318
    Text: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 Preliminary LVTTL, Pipelined DBA SRAM Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue


    Original     		PDF A67L8316/A67L8318/ A67L7332/A67L7336 100MHz) A67L7332 A67L7336 A67L8316 A67L8318

    PF351

    Abstract: GVT73256A16
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high


    Original     		PDF GVT73256A16 GVT73256A16 73256A16 PF351

    A67L7332

    Abstract: A67L7336 A67L8316 A67L8318
    Text: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBATM SRAM Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 11, 1999


    Original     		PDF A67L8316/A67L8318/ A67L7332/A67L7336 117/100/83MHz) Bu860 A67L7332 A67L7336 A67L8316 A67L8318

    A67L73321

    Abstract: A67L73361 A67L83161 A67L83181
    Text: A67L83161/A67L83181/ A67L73321/A67L73361 Series 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBATM SRAM Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBATM SRAM Revision History Rev. No. 0.0 0.1 History Issue Date Remark Initial issue


    Original     		PDF A67L83161/A67L83181/ A67L73321/A67L73361 A67L73321 A67L73361 A67L83161 A67L83181

    ci 741

    Abstract: GALVANTECH UA 741 datasheet GVT72256A16 72256A16
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT72256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high


    Original     		PDF GVT72256A16 GVT72256A16 72256A16 ci 741 GALVANTECH UA 741 datasheet

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet June 11, 2002 FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R256K16 48-lead

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet October 9, 2002 FEATURES q 15ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R256K16

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet May 23, 2002 FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R256K16 48-lead

    GVT73256A16

    Abstract: No abstract text available
    Text: GALVANTECH, INC. GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 ASYNCHRONOUS SRAM 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high


    Original     		PDF GVT73256A16 GVT73256A16 73256A16

    bga 6x8

    Abstract: A62S8316
    Text: A62S8316 Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 12, 2001 Preliminary February, 2001, Version 0.0


    Original     		PDF A62S8316 A62S8316-S A62S8316-SI bga 6x8

    AMIC TECHNOLOGY

    Abstract: A62S8316 bga 6x8
    Text: A62S8316 Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 12, 2001 Preliminary February, 2001, Version 0.0


    Original     		PDF A62S8316 A62S8316-S A62S8316-SI AMIC TECHNOLOGY bga 6x8

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet March 25, 2002 FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R256K16 0E14n/cm 48-lead

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet November 9, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R256K16 0E14n/cm 48-lead 115ns

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R256_16 256K x 16 SRAM Advanced Data Sheet August 21, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R256 0E14n/cm 48-lead 115ns

    AWB065

    Abstract: seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery
    Text: JEIDA Ver. 4 STATIC RAM VARIATION Part Number Memory Size AWB065SD*0 AWB129SD*0 AWB257SD*0 AWB513SD*0 AWB101SD*0 AWB201SD*0 64K Bytes 128K Bytes 256K Bytes 512K Bytes 1M Bytes 2M Bytes Description 32K X 16 64K X 16 128K X 16 256K X 16 512K X 16 1M X 16 bits


    OCR Scan     		PDF AWB065SD AWB129SD AWB257SD AWB513SD AWB101SD AWB201SD AWB065, AWB129, AWB257, AWB513, AWB065 seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery

    PCMCIA CARD, Static Memory, write protect switch

    Abstract: PCMCIA CARD, Static Memory, write protect switch, PCMCIA SRAM Memory Card 512k 128k sram card 60 pin battery
    Text: PCMCIA/JEIDA LOW VOLTAGE STATIC RAM 1. VARIATION Memory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128K x 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit MIX MIX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS


    OCR Scan     		PDF BR2325 200nS PCMCIA CARD, Static Memory, write protect switch PCMCIA CARD, Static Memory, write protect switch, PCMCIA SRAM Memory Card 512k 128k sram card 60 pin battery

    BR2325

    Abstract: No abstract text available
    Text: 1. VARIATION Part Number LWB065ES* LWB129ES* LWB257ES* LWB513ES* LWB101 E S * LWB201 E S * Memory Size 6 4K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128KX 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit


    OCR Scan     		PDF LWB065ES* LWB129ES* LWB257ES* LWB513ES* LWB101 LWB201 128KX BR2325 200nS

    Untitled

    Abstract: No abstract text available
    Text: KM4216C258 CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. • Dual port Architecture The RAM port has a write per bit mask capability. 256K x 16 bits RAM port


    OCR Scan     		PDF KM4216C258 104ns 130ns

    Untitled

    Abstract: No abstract text available
    Text: 7^ f PRELIMINARY SEMICONDUCTOR 256K x 16 Static RAM Module Features Functional Description • High-density 4 Megabit SRAM Module The CYM1641 is a high performance 4-Megabit Static RAM module organized as 256K words by 16 bits. This module is constructed from sixteen 256K x 1 SRAMs


    OCR Scan     		PDF CYM1641 16-bit CYM1641HD-25C CYM1641LHD-25C CYM1641LHD-35C 1641LHD-35MB CYM1641HD-45C CYM1641LHD-45C CYM1641HD-45MB CYM1641LHD-45MB

    CMOS BATTERY HOLDER

    Abstract: 32k cmos card
    Text: JEIDA Ver. 4 LOW POWER STATIC RAM V A RIA TIO N Part Number Memory Size LWB065SD*0 LWB128SD*0 LWB257SD*0 LWB513SD*0 LWB101SD*0 Note: 64K 128K 256K 512K 1M Bytes Bytes Bytes Bytes Bytes Description 32K 64K 128K 256K 512K X 16 X 16 X 16 X 16 X 16 bits bits bits


    OCR Scan     		PDF LWB065SD LWB128SD LWB257SD LWB513SD LWB101SD CMOS BATTERY HOLDER 32k cmos card

    sram card 60 pin

    Abstract: 128k sram card 60 pin battery
    Text: JEIDA Ver. 3 STATIC RAM VARIATION Part Number Memory Size AWB129JS10 AWB257JS10 AWB513JS10 128K Bytes 256K Bytes 512K Bytes Description 64K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD 128K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD 256K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD


    OCR Scan     		PDF AWB129JS10 AWB257JS10 AWB513JS10 AWB257, AWB513 AWB513 sram card 60 pin 128k sram card 60 pin battery