GVT71256T18
Abstract: DQ974
Text: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256T18
71256T18
access/10ns
GVT71256T18
DQ974
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CE1X
Abstract: fast sram 100mhz CE2Y GALVANTECH
Text: ADVANCE INFORMATION GALVANTECH, INC. DUAL I/O DUAL ADDRESS SYNCHRONOUS SRAM GVT81256P36/GVT81128P36 256K/128K X 36 PIPELINED SRAM 256K/128K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • •
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GVT81256P36/GVT81128P36
256K/128K
GVT81256P36/GVT81128P36
144x36/131
072x36
81256P36
CE1X
fast sram 100mhz
CE2Y
GALVANTECH
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GVT71256ZC18
Abstract: No abstract text available
Text: GVT71256ZC18 256K X 18 PIPELINED ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT FEATURES • • • • • • • • • • • • • • • Zero Bus Latency, no dead cycles between write and read cycles Fast clock speed: 143, 133, 117, and 100MHz
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GVT71256ZC18
100MHz
71256ZC18
access/10
GVT71256ZC18
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GVT73128A8
Abstract: 73128A8
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM
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GVT73128A8
GVT73128A8
73128A8
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marking A00
Abstract: GVT7164D18
Text: GALVANTECH, INC. GVT7164D18 64K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 64K x 18 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7164D18
GVT7164D18
65536x18
7164D18
access/10ns
access/12ns
access/15ns
access/20ns
marking A00
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GVT73512A8
Abstract: No abstract text available
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT73512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT73512A8
GVT73512A8
73512A8
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UA 741 datasheet
Abstract: ci 741 GVT7264A16 7264A16
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,
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GVT7264A16
GVT7264A16
7264A16
UA 741 datasheet
ci 741
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marking A00
Abstract: 71128 GVT71128D18
Text: GALVANTECH, INC. GVT71128D18 128K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 18 SRAM +3.3V POWER SUPPLY, FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71128D18
GVT71128D18
072x18
71128D18
marking A00
71128
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GALVANTECH
Abstract: GVT7132B36 DQ25d
Text: GALVANTECH, INC. GVT7132B36 32K X 36 SYNCHRONOUS BURST SRAM 32K x 36 SRAM SYNCHRONOUS BURST SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7132B36
GVT7132B36
32768x36
7132B36
access/15ns
access/20ns
GALVANTECH
DQ25d
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GVT7132C32
Abstract: marking A00 GVT7132C32Q-4
Text: GALVANTECH, INC. GVT7132C32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7132C32
GVT7132C32
32768x32
marking A00
GVT7132C32Q-4
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FTL 8-1
Abstract: No abstract text available
Text: ADVANCE INFORMATION GVT8664/32/16C16/18 GVT86128/64/32C8/9 GALVANTECH, INC. SYNCHRONOUS DUAL-PORT BURST SRAM 64K/32K/16K x 16/18 128K/64K/32K x 8/9 +5V SUPPLY, BURST COUNTER FEATURES GNERAL DESCRIPTION • The GVT8616C16/18, GVT8632C16/18, and GVT8664C16/18 are high speed synchronous 16K, 32K and
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GVT8664/32/16C16/18
GVT86128/64/32C8/9
64K/32K/16K
128K/64K/32K
GVT8616C16/18,
GVT8632C16/18,
GVT8664C16/18
GVT8632C8/9,
GVT8664C8/9,
GVT86128C8/9
FTL 8-1
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73128
Abstract: 100-PIN GVT73128A24 GVT73128S24 marking wc 8N
Text: GALVANTECH, INC. GVT73128A24/GVT73128S24 128K X 24 ASYNCHRONOUS SRAM ASYNCHRONOUS SRAM 128K x 24 SRAM +3.3V SUPPLY, THREE MEGABIT THREE CHIP ENABLES FEATURES GENERAL DESCRIPTION • • • • • • • The GVT73128A24 and GVT73128S24 are organized as a 131,072 x 24 SRAM using a four-transistor memory cell
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GVT73128A24/GVT73128S24
GVT73128A24
GVT73128S24
73128A24
73128S24
73128
100-PIN
marking wc 8N
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GVT71128E36
Abstract: CO78 7L Marking
Text: GALVANTECH, INC. GVT71128E36 128K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 128K x 36 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71128E36
GVT71128E36
072x36
71128E36
access/10ns
access/11ns
access/20ns
CO78
7L Marking
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100-PIN
Abstract: GVT71256ZC36 GVT71512ZC18
Text: ADVANCE INFORMATION GVT71512ZC36/GVT71A24ZC18 512K X 36/1M X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT 512K x 36 SRAM 1M x 18 SRAM +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES GENERAL DESCRIPTION • The GVT71512ZC36 and GVT71A24ZC18 SRAMs are
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GVT71512ZC36/GVT71A24ZC18
36/1M
GVT71512ZC36
GVT71A24ZC18
288x36
576x18
71512ZC36
71A24ZC18
100-PIN
GVT71256ZC36
GVT71512ZC18
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GVT7264A18J-10L
Abstract: abe 741 DQ10-DQ18
Text: PRELIMINARY GALVANTECH, INC. GVT7264A18 REVOLUTIONARY PINOUT 64K X 18 ASYNCHRONOUS SRAM 64K x 18 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT7264A18 is organized as a 65,536 x 18 SRAM
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GVT7264A18
GVT7264A18
44-pin
GVT7264A18J-10L
abe 741
DQ10-DQ18
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GVT71256E18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256E18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256E18
GVT71256E18
144x18
71256E18
access/10ns
access/11ns
access/20ns
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GVT71256B18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256B18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256B18
GVT71256B18
144x18
71256B18
access/10ns
access/11ns
access/20ns
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GVT7132D32
Abstract: "32K x 32" SRAM marking a11
Text: GALVANTECH, INC. GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7132D32
GVT7132D32
32768x32
7132D32
access/10ns
access/13ns
access/15ns
"32K x 32" SRAM
marking a11
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GVT73128A8
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 ASYNCHRONOUS SRAM 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM
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GVT73128A8
GVT73128A8
73128A8
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GVT73512A8
Abstract: No abstract text available
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT73512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT73512A8
GVT73512A8
36-pin
73512A8
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Untitled
Abstract: No abstract text available
Text: For Immediate Release CYPRESS COMPLETES ACQUISITION OF GALVANTECH INC. High-Performance Memory Portfolio to Expand Cypress’s Position In IP Routers and ATM Switches SAN JOSE, Calif. – March 3, 2000 - Cypress Semiconductor Corporation NYSE: CY today
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GVT7132D32
Abstract: 7132D32
Text: GALVANTECH, GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTIO N • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7132D32
GVT7132D32
32768x32
synchronVT7132D32
7132D32
access/10ns
access/12ns
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PF351
Abstract: GVT73256A16
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high
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GVT73256A16
GVT73256A16
73256A16
PF351
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GVT71128ZC36
Abstract: No abstract text available
Text: GVT71128ZC36 128K X 36 PIPELINED ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT FEATURES • • • • • • • • • • • • • • • Zero Bus Latency, no dead cycles between write and read cycles Fast clock speed: 143, 133, 117, and 100MHz
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GVT71128ZC36
100MHz
71128ZC36
access/10
GVT71128ZC36
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