TBA 129-5
Abstract: WMS256K16L-XXX WMS256K16-XXX
Text: White Electronic Designs 256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ PIN CONFIGURATION FOR 256K16-XXX 44 CSOJ Packaging 44 FlatpacK • 44 pin Ceramic SOJ Package 102
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WMS256K16-XXX
256Kx16
MIL-STD-883
256Kx16
I/O9-16
WMS256K16L-XXX
01HNX
02HNX
03HNX
TBA 129-5
WMS256K16-XXX
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Untitled
Abstract: No abstract text available
Text: $6/&. 9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (256K16E0-35)
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AS4LC256K16E0-35)
40-pin
40/44-pin
I/O15
AS4LC256K16E0-35JC
AS4LC256K16E0-35TC
AS4LC256K16E0-45JC
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PG-FP5 Flash Memory Programmer
Abstract: 100 pin wqfn V850 Dual Voltage Flash JC3-L JH3-E P910 V850ES V850ES/jg3-L v850es/jg3-l NEC V850ES/JJ3
Text: V850ES/Jx3 V850ES/Jx3 LPC LPC Low (Low Pin Pin Count Count) Series Series V850ES/Jx3-H, V850ES/Jx3-L, V850ES/Jx3-E 32 bit Single-chip Microcontrollers Feature V850ES/Jx3-L Industry-Leading Low power consumption Ideal for Battery-Driven Systems Low power & Low voltage
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V850ES/Jx3
V850ES/Jx3-H,
V850ES/Jx3-L,
V850ES/Jx3-E
V850ES/Jx3-L
V850ES/Jx3-H
98MIPS,
PG-FP5 Flash Memory Programmer
100 pin wqfn
V850 Dual Voltage Flash
JC3-L
JH3-E
P910
V850ES
V850ES/jg3-L
v850es/jg3-l NEC
V850ES/JJ3
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AS4LC256K16EO
Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
Text: 256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time
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AS4LC256K16EO
AS4LC256K16EO-35)
AS4LC256K16EO35)
40-pin
40/44-pin
I/O15
40-pin
AS4LC256K16E0-35JC
AS4LC256K16E0-45JC
AS4LC256K16EO
AS4LC256K16EO-35
AS4LC256K16E0-35JC
RAS-28
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AS4C256K16FO
Abstract: AS4C256K16FO-60
Text: 256K16FO 5V 256K X 16 CMOS DRAM Fast Page Mode Features • Organization: 262,144 words x 16 bits • High speed - 25/30/35/50 ns RAS access time - 12/16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption
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AS4C256K16FO
ASAS4C256K16FO-50)
AS4C256K16FO-50
40-pin
40/44-pin
AS4C256K16F0-25JC
AS4C256K16F0-30JC
AS4C256K16F0-35JC
AS4C256K16FO-50JC
AS4C256K16FO
AS4C256K16FO-60
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WMS256K16L-XXX
Abstract: WMS256K16-XXX
Text: 256K16-XXX HI-RELIABILITY PRODUCT 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging •44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Flatpack (Package 225)
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WMS256K16-XXX
256Kx16
MIL-STD-883
256Kx16
WMS256K16L-XXX
I/O9-16
A0-17
01HNX
02HNX
WMS256K16-XXX
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First line 7aa ed tms 3874 9v voltage regulator
Abstract: RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508
Text: R O C K W E L L Network access S E M I C O N D U C T O R S Y S T E M S RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY datasheet PROVIDING HIGH SPEED MULTIMEDIA CONNECTIONS September 1998 Preliminary Information This document contains information on a product under development. The parametric information contains target
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RS8250/1/2/3/4/5
RS825x
N825xDSA
First line 7aa ed tms 3874 9v voltage regulator
RS8250EBGC
tms 3874
9v voltage regulator code 9y
mrd 14b
R7173-11
18AF
d725
11AF
PE-68508
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Untitled
Abstract: No abstract text available
Text: EDI816256CA-XM44XG 256K16X-XLJXG 256Kx16 PLASTIC SRAM PLASTIC PLUS FEATURES Access Times of 15, 17, 20, 25ns Center Power/Ground Pins Revolutionary Standard Commercial Off-The-Shelf (COTS) Memory Devices for Extended Temperature Range
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EDI816256CA-XM44XG
WPS256K16X-XLJXG
256Kx16
I/O9-16
EDI816256CA-XM44XG"
MIL-STD-883
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AS4LC256K16EO
Abstract: No abstract text available
Text: 256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time
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AS4LC256K16EO
40-pin
AS4LC256K16EO-45)
40/44-pin
I/O15
40-pin
AS4LC256K16E0-45JC
AS4LC256K16E0-50JC
AS4LC256K16EO
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Building Management System
Abstract: V850ES PG-FP5 Flash Memory Programmer PD70F3813K8-4B4-AX
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M8E0909E)
Building Management System
V850ES
PG-FP5 Flash Memory Programmer
PD70F3813K8-4B4-AX
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pe-68508
Abstract: d725 B32AD PE 68508 r1049 HAD30 68508 C3210 HAD20 8251 eeprom
Text: A 156 157 208 68, 15, 77, 20, 85, 30, 93 52 B DAN JEFF C APPROVALS DRAWN SCOTT 303 543-2029 CHECKED ENGINEER MULLIN B SIZE SCALE: VSS 66MHZ 7 1 DATE ROCKWELL CODE IDENT NONE +3V San Diego, NO. LOVELAND/PEAK7 DRAWING D CA 8-19-1998_14:30 SHEET SEMICONDUCTOR
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66MHZ
128X8
RXDAT61
RS825x
TXIN12
SDML6674CH
44MHZ
BT00-X720-B
BT00-X720-B
pe-68508
d725
B32AD
PE 68508
r1049
HAD30
68508
C3210
HAD20
8251 eeprom
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Untitled
Abstract: No abstract text available
Text: January 2001 Advance Information 256K16EO 2.5V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh
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AS4VC256K16EO
40-pin
40/44-pin
I/O15
AS4VC256K16E0-45JC
AS4VC256K16EO-45TC
AS4VC256K16EO-60JC
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e
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AS4LC256K16E0-35)
AS4LC256K16E0-35JC
AS4LC256K16E0-45JC
AS4LC256K16E0-60JC
AS4LC256K16E0-35TC
AS4LC256K16E0-45TC
AS4LC256K16E0-60TC
256K16E0
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Untitled
Abstract: No abstract text available
Text: C3 256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16
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WMS256K16-XXX
256KX16
MIL-STD-883
as256Kx16
l/Cte-16
Ao-17
256K16
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Untitled
Abstract: No abstract text available
Text: a W 256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range
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MS256K16-XXX
256Kx16
256Kx16
WMS256K16-XXX
AO-17
02HMX
03HMX
01HNX
02HIMX
03HNX
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Untitled
Abstract: No abstract text available
Text: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation
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256Kx16
MIL-STD-883
256Kx16
WMS256K16-XXX
AO-17
256Kx
01HXX*
02HXX*
03HXX*
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AS4C256K16F0-60JC
Abstract: ez 948 AS4C256K16F0 LRAL taa 723
Text: WÊ High Performance 256Kxl6 CMOS DRAM 256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed
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AS4C256K16F0
256Kxl6
256Kxl6
4C256K16F0-50)
I/014
I/013
I/012
40-pin
AS4C256KI6F0-50JC
AS4C256K16F0-60JC
AS4C256K16F0-60JC
ez 948
AS4C256K16F0
LRAL
taa 723
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as4c256k16eo
Abstract: 256KX16 AS4C256K16E0 LO301
Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed
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AS4C256K16E0
256KX16
4C256K16E0-45)
40-pin
I/015
I/014
as4c256k16eo
LO301
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Untitled
Abstract: No abstract text available
Text: t t W 256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation
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MS256K16-XDLX
256Kx16
MIL-STD-883
256Kx16
256K16
01HXX'
03HXX'
256KX
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Untitled
Abstract: No abstract text available
Text: 77 256K16-XXX M/HITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns Data I/O C o m p a tib le w it h 3.3V devices ■ 2 V M in im u m Data R etention fo r b a tte ry back up o pe ra tio n M IL-STD -883 C o m p lia n t Devices A v a ila b le
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WMS256K16-XXX
256Kx16
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Untitled
Abstract: No abstract text available
Text: 256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e
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AS4LC256K16E0
AS4LC256K16E0-35)
40-pin
AS4LC256K16E0-35JC
AS4LC256K16E0-45JC
AS4LC256K16E0-60JC
40/44-pin
AS4LC256K16E0-35TC
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YH 13001
Abstract: SP 13001
Text: Advance information •■ A S4V 256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h
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C256K16E0
40-pin
AS4VC256K16E0-45JC
AS4VC256K16E0-60JC
AS4VC256K16E0-45TC
AS4VC256K16E0-60TC
256K16E0
YH 13001
SP 13001
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Untitled
Abstract: No abstract text available
Text: ADVANCE |U |I C R O N 256K 256KX 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6 and 7ns F ast O E# access tim es: 4 .5 ,5 an d 6ns
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6/18D8
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Untitled
Abstract: No abstract text available
Text: TT M/HITE M I C R O E L E C T R O N I C S W M S2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Tim es 17, 20, 25, 35ns D ata I/O C om patible w ith 3.3V devices ■ M IL-S TD -883 C om p lian t Devices A v a ila b le 2V M in im u m Data R ete ntion fo r b a tte ry back up operatio n
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256Kx16
WMS256K16-XXX
AO-17
01HXX*
02HXX*
03HXX*
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