256W Search Results

Contextual Info: High Reliability Serial EEPROMs Microwire BUS BR93□□□family BU9888FV-W No.11001EAT20 ●Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Features 1 256wordx16bits architecture 4k bit serial EEPROM 2) Operating voltage range 3.0～3.6V)

MBM10422A-5

Abstract: MBM10474A-10 MBM100480-15 24-Pin Ceramic DIP MBM10470 MBM100422A-5 MBM10474A-5 MBM10474A MBM100422
Contextual Info: Section 1 EC L RAM s — A t a Glance Pag« D«vto* Maximum Acoess Tim« ns Capacity Paekag« Options 1-3 MBM10422A-5 -7 5 7 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT 24- pad Ceramic LCC 1-9 MBM100422A-5 -7 5 7 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT

Contextual Info: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and

2NEX

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM

cy7c122

Abstract: CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25
Contextual Info: CY7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Functional Description • 256 x 4 static RAM for control store in high-speed computers The CY7C122 is a high-performance CMOS static R A M organized as 256words by 4 bits. Easy memory expansion is pro­

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. Features 256wordx16bits architecture 4k bit serial EEPROM Operating voltage range(3.0V to 3.6V)

Non-Volatile RAM

Abstract: S-22H DP-018
Contextual Info: Rev.1.1 S-22 Series PARALLEL NON-VOLATILE RAM The S-22 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable 2 memory E PROM to backup the SRAM. The organization is 256wordx4-bit (total 1K bits) for the S-22H12 and the S-22S12, and 64word×4-bit (total 256 bits) for the S-22H10 and the S-22S10.

Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1095 - REVISED JUNE 1995 * Organization: I • • • • • • • • • • • • • • • • • • • • HKC PACKAGE TOP VIEW - DRAM: 262144 Words x 16 Bits - SAM: 256Words x 16 Bits

Contextual Info: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area

ADV476

Contextual Info: ,. DEVICES ANALOG CMOS, 80 MHzMonolithic 256Word Power-Down ColorPaletteRAM-DACs LIllI ADV4111ADV415 I I FEATURES Persona' System/Z- and VGA- Compatible 80, 88, 50 and 35 MHz PipelinedOp8rltion ADV4781ADV.71 ADV8 Pin end Functional Compatible Power.oown Mode

77261

Abstract: LQ 425 B8 SMJ55166 SMJ55166-80 nf t47 - 221 Video RAM texas instruments 77261 smj55166-70 tsc810 ta 8268 ah
Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1995 - REVISED JUNE 1995 HKCPACKAGE TO P VIEW • Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256W ords x 16 Bits • Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and

P256

Abstract: P512 BIT12 spare assignment standard
Contextual Info: ECC Algorithm 256Word Flash Planning Group Memory Division Samsung Electronics Co., Ltd This is only example algorithm for SW ECC. In case of OneNAND which supports HW ECC, parity bit position can be changed. Product Product Planning Planning & & Application

28-PIN

Contextual Info: Section 3 Application Specific Bipolar E C L R A M s — A t a Glance Capacity Package Options 6 1024 bits 256w x 4b 24-pin Ceramic DIP, FPT 24-pad Ceramic LCC MBM100423LL-6 6 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT 24-pad Ceramic LCC 3-27 MBM10476LL-9

EK-016-8905

Abstract: RP5B02N
Contextual Info: KOM EK-016-8905 CMOS 2k bit SRAM 256wordX8bit RP5B02N/W The RP5B02 is a 2k bit high speed CMOS static RAM organized 256 words by 8 bits and operates from a single 5 V supply. The RP5B02 has CMOS level inputs and outputs, and the outputs are 3-state output type.

"24 pin" DRAM

Abstract: mb81c1501
Contextual Info: Section 3 Application Specific DRAM s — Page Devfc« Maximum Accesa Tima na 3-3 MB81461-12 -15 120 150 A t a Glance Capacity Package Options ORAM: 262144 bits (65536W x 4b) 1016 bits (256w x 4b) 24- pin Plastic DIP, ZIP SAM : 3-35 MB81461B-12 -15 120 150

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM

TMS48C121-80

Abstract: AJ10 M5M482128 tc528128
Contextual Info: 1M 1 2 8 K X 8 m -7 ) ^ • h^ Ï ' J TC528126AP/AJ-10.-12 % TC528128AP/AJ-10,-12 / — ¿i - TMS48C121-80,-10,-12 T.I «- _ - - 126KW X 8 /256W X 8 5 V±10% X h « * X X X X X (SANUf >'<{, 7 7 r í 7') 110, 100/150, 140(max, - 100, 80, 70/120, 95, 85(max»

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM

93l46

Abstract: 93l66 93L56 s93L46ar marking 66a S-93L46A S-93L56A S-93L66A transistor marking code sk S93L66
Contextual Info: S-93L46A/56A/66A LOW VOLTAGE OPERATION 3-WIRE SERIAL E2PROM www.sii-ic.com Rev.6.0_00 Seiko Instruments Inc., 2004-2010 The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 1/2/4 K-bit 3-wire serial E2PROM with a wide operating voltage range. It is organized as 64-word x 16-bit, 128-word × 16-bit, 256word × 16-bit, respectively. Each is capable of sequential read, at which time addresses are automatically

TMS320P17

Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
Contextual Info: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C

RAV 14202

Abstract: TMS320C26
Contextual Info: SMJ320C26 DIGITAL SIGNAL PROCESSOR 68-P IN GB PIN G R ID A R R A Y C E R A M IC P A C K A G E t TO P V IE W 100-ns Instruction Cycle Time 1568 Words of Configurable On-Chip Data/Program RAM 1 2 3 4 5 6 7 6 9 10 11 256 Words of On-Chip Program ROM 128k Words of Data/Program Space

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

Contextual Info: TLC1542C, TLC1542I, TLC1542M, TLC1542Q, TLC1543C, TLC1543I, TLC1543Q 10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS052E – MARCH 1992 – OCTOBER 1998 10-Bit Resolution A/D Converter 11 Analog Input Channels Three Built-In Self-Test Modes

SPRU132B

Contextual Info: SMQ320C32 DIGITAL SIGNAL PROCESSOR SGUS027B – APRIL 1998 – REVISED MARCH 1999 D D D D D D D D D D D Military Operating Temperature Range – 55°C to 125°C; QML Processing High-Performance Floating-Point Digital Signal Processor DSP SMQ320C32-50 (5 V)