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    MB81C1501

    Abstract: CXK1206M H5M4C500L-5
    Text: — 366 7 — 1/ — A SS • J °E o -i § TC 521000P/J //P D 42270-60 « / - * N EC y * v * is C X K 12 06 M MB81C1501 SONY * ± * 262144W x 4 bits (32 76 8T K k X x 8 t y h y ' 1 7 293760W x 4 bits • 2 h««; • > ' ] r ^ A i ) x 4 bits • 2 tf-h « (£


    OCR Scan
    PD42270-60 TC521000P/J CXK1206M MB81C1501 H5M4C500L-5 239330WX 262144WX 32768T 293760WX 1920W PDF

    MB81C1501

    Abstract: CXK1206M H5M4C500L-5
    Text: — 366 — 7 1/—A • J °E o -i § SS « //PD42270-60 /- * NEC y * v * is TC521000P/J 262144W x 4 bits (32768T K k X x 8 t y h y ' 1 7 239330WX 4 bits (910 S x 263 7 4 > x 4 bits) • 2 tf-h « (£ v 'J 7 ^ À * J x 4 b i t s w 'I T x 4 bits • 2


    OCR Scan
    uPD42270-60 239330WX 62144W 32768T TC521000P/J CXK1206M 93760W MB81C1501 H5M4C500L-5 1920W MB81C1501 PDF

    "24 pin" DRAM

    Abstract: mb81c1501
    Text: Section 3 Application Specific DRAM s — Page Devfc« Maximum Accesa Tima na 3-3 MB81461-12 -15 120 150 A t a Glance Capacity Package Options ORAM: 262144 bits (65536W x 4b) 1016 bits (256w x 4b) 24- pin Plastic DIP, ZIP SAM : 3-35 MB81461B-12 -15 120 150


    OCR Scan
    MB81461-12 MB81461B-12 5536W 262144wx4b) 512wx4b) 262144wx 93760W 293760w "24 pin" DRAM mb81c1501 PDF

    MB81C1501

    Abstract: CXK1206M H5M4C500L-5
    Text: — 366 — 7 1/—A • J °E o -i § SS « //PD42270-60 /- * NEC y * v * is TC521000P/J 262144W x 4 bits (32768T K k X x 8 t y h y ' 1 7 239330WX 4 bits (910 S x 263 7 4 > x 4 bits) • 2 tf-h « (£ v 'J 7 ^ À * J x 4 b i t s w 'I T x 4 bits • 2


    OCR Scan
    uPD42270-60 239330WX 62144W 32768T TC521000P/J CXK1206M 93760W MB81C1501 H5M4C500L-5 1920W MB81C1501 PDF