87941
Abstract: 33075
Text: 87941 PART NUMBER 7 B SHEET 2 OF 2 DESCRIPTION OF CHANGE R.065 6 REV. APPD. REV. DATE PCN NO BY A 25Dec01 32916 CCM A2 21May02 RELEASED FOR PRODUCTION BLACK .450 REMOVE: "CUSTOMER PART#" FROM NOTE .750 - 16 UNF - 2A A3 LABEL TO BE ADHERED AROUND SWITCH BODY WHICH INCLUDES:
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25Dec01
21May02
21Jan04
8JUL02
23OCT01
87941OF
98-41B
87941
33075
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Untitled
Abstract: No abstract text available
Text: Si4726CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V
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Si4726CY
S-05313--Rev.
25-Dec-01
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Untitled
Abstract: No abstract text available
Text: SUD50N03-10CP Preliminary Information Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY 30 APPLICATIONS rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 15 0.012 @ VGS = 4.5 V
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SUD50N03-10CP
O-252
SUD50N03-10CP
S-05395--Rev.
25-Dec-01
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Untitled
Abstract: No abstract text available
Text: Package Information Vishay Siliconix TOĆ220AB A F E MILLIMETERS ĬP Q Dim A b b 1 c D E e e(1) F H(1) J(1) L L(1) ĬP Q H(1) D L(1) b(1) L INCHES Min Max Min Max 4.32 4.70 0.170 0.185 0.38 1.01 0.015 0.040 1.14 1.40 0.045 0.055 0.36 0.50 0.014 0.020 14.60
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O220AB
T-01298
T-01298--Rev.
25-Dec-01
13-Feb-02
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Untitled
Abstract: No abstract text available
Text: Si786 Vishay Siliconix Dual-Output Power-Supply Controller FEATURES D D D D Fixed 5-V and 3.3-V Step-down Converters Less than 500-mA Quiescent Current per Converter 25-mA Shutdown Current 5.5-V to 30-V Operating Range DESCRIPTION The Si786 Dual Controller for Portable Computer Power
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Si786
500-mA
25-mA
Si786
MAX786
Si9140
Si4410
S-05428--Rev.
25-Dec-01
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Untitled
Abstract: No abstract text available
Text: Si4726CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V
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Si4726CY
S-05313--Rev.
25-Dec-01
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Si4496DY
Abstract: s0533
Text: Si4496DY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.7 0.031 @ VGS = 6.0 V 6.9 APPLICATIONS D Primary Side Switch D SO-8
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Si4496DY
S-05330--Rev.
25-Dec-01
s0533
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A96V
Abstract: Si2328DS SI2328ds rev
Text: Si2328DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2328DS
O-236
OT-23)
S-05372--Rev.
25-Dec-01
A96V
SI2328ds rev
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Untitled
Abstract: No abstract text available
Text: Si4728CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 30-V MOSFETs High Side: 0.018 W @ VDD = 4.5 V
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Si4728CY
S-05314--Rev.
25-Dec-01
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