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    SI4496DY Price and Stock

    Vishay Intertechnologies SI4496DY-T1

    TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4.6A I(D),SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4496DY-T1 38,724
    • 1 $3.8025
    • 10 $3.8025
    • 100 $3.8025
    • 1000 $3.8025
    • 10000 $1.3309
    		Buy Now
    SI4496DY-T1 288
    • 1 $3.8025
    • 10 $3.8025
    • 100 $2.3449
    • 1000 $2.3449
    • 10000 $2.3449
    		Buy Now

    Vishay Semiconductors SI4496DY-T1

    TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4.6A I(D),SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4496DY-T1 35,000
    • 1 $3.8025
    • 10 $3.8025
    • 100 $3.8025
    • 1000 $3.8025
    • 10000 $1.3309
    		Buy Now

    SI4496DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4496DY Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI4496DY Vishay Siliconix MOSFETs Original PDF
    SI4496DY Vishay Telefunken R-C Thermal Model Parameters Original PDF
    SI4496DY-RC Vishay Siliconix R - C Thermal Model Parameters Original PDF
    Si4496DY SPICE Device Model Vishay N-Channel 100-V (D-S) MOSFET Original PDF

    SI4496DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74109

    Abstract: 0619 817A AN609 Si4496DY 74109 application circuit
    Text: Si4496DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4496DY AN609 02-Sep-05 74109 0619 817A 74109 application circuit

    Untitled

    Abstract: No abstract text available
    Text: Si4496DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.7 0.031 @ VGS = 6.0 V 6.9 APPLICATIONS D Primary Side Switch D


    Original     		PDF Si4496DY Si4496DY-T1 S-31726--Rev. 18-Aug-03

    Si4496DY

    Abstract: Si4496DY-T1
    Text: Si4496DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.7 0.031 @ VGS = 6.0 V 6.9 APPLICATIONS D Primary Side Switch D


    Original     		PDF Si4496DY Si4496DY-T1 S-31726--Rev. 18-Aug-03

    77A DIODE

    Abstract: Si4496DY
    Text: SPICE Device Model Si4496DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4496DY 0-to-10V 17-Oct-01 77A DIODE

    Si4496DY

    Abstract: s0533
    Text: Si4496DY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.7 0.031 @ VGS = 6.0 V 6.9 APPLICATIONS D Primary Side Switch D SO-8


    Original     		PDF Si4496DY S-05330--Rev. 25-Dec-01 s0533

    Si4496DY

    Abstract: Si4496DY-T1 MJ 14 x 1,5 - 4
    Text: Si4496DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.7 0.031 @ VGS = 6.0 V 6.9 APPLICATIONS D Primary Side Switch D


    Original     		PDF Si4496DY Si4496DY-T1 18-Jul-08 MJ 14 x 1,5 - 4

    Untitled

    Abstract: No abstract text available
    Text: Si4496DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.7 0.031 @ VGS = 6.0 V 6.9 APPLICATIONS D Primary Side Switch D


    Original     		PDF Si4496DY Si4496DY-T1 08-Apr-05

    Si4496DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4496DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4496DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4496DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.7 0.031 @ VGS = 6.0 V 6.9 APPLICATIONS D Primary Side Switch D SO-8 S 1 8 D S 2


    Original     		PDF Si4496DY Si4496DY-T1 S-03951--Rev. 26-May-03

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110