Untitled
Abstract: No abstract text available
Text: 1 取付間隔について コンデンサの取付間隔は放熱や保安装置の動作を考慮して決められてます。 並列使用時の標準取付間隔はケース奥行寸法（b 寸法）毎に次の通りにしてください。 ●ブリキ（黄銅）ケース
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6570mm
75130mm
150mm
2940kgfcm
25kgfcm
4055kgfcm
35kgfcm
85100kgfcm
65kgfcm
160200kgfcm
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MBM400JS6AW
Abstract: PC1470 Hitachi DSA0047
Text: IGBT MODU ODULE MBM400JS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 E2 15 27 48 62 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD .
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MBM400JS6AW
MBM400JS6AW
PC1470
Hitachi DSA0047
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Untitled
Abstract: No abstract text available
Text: 57832-5000 1.0 I/O 120P WIRING TOOL PRODUCT SPECIFICATION ATP-57832-5000E 2005/05/30, Rev.- C Molex Japan Co., Ltd. 1. Description This tool is a manual-wiring tool that is used to arrange the wire of I/O cable into the upper cover as the pre-work of the termination of 1.0 I/O 120P cable assembly of Molex.
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ATP-57832-5000E
535ire
UL20276,
25kgf
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mbn1200gs12aw
Abstract: fast recovery diode 600v 1200A
Text: IGBT MODU ODULE MBN1200GS12AW OUTLINE DRAWING 130 110 2-M4 * High speed and low saturation voltage. G 46.75 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . Unit in mm E 110 19.5 27.5 FEAT EATURES RES 4-φ6.5 E 130 Silicon N-channel IGBT
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MBN1200GS12AW
mbn1200gs12aw
fast recovery diode 600v 1200A
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Untitled
Abstract: No abstract text available
Text: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .
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MBM200JS12AW
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MBM300GS12AW
Abstract: MBM300GS12A 9V DC INPUT and gate ic Hitachi DSA00118 MBM300GS12
Text: IGBT MODU ODULE MBM300GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . * Isolated head sink (terminal to base).
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MBM300GS12AW
600any
MBM300GS12AW
MBM300GS12A
9V DC INPUT and gate ic
Hitachi DSA00118
MBM300GS12
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FRFM-501LD104KE1A0
Abstract: FRFN-251LV104KC4A0 DCR2-22A25 FDFDD631U104KDADZ0 RFM2H104KD FFALN251AU355UF0AA RFN2E473K EVN40M205UL FRFM-401LD504KBBA3 RFM2E145KPD
Text: フィルムコンデンサ CAT.No.1003O 目 次 製品検索 製品一覧表 使用上の注意 品番の表し方 製品ガイド 自動挿入用テーピング仕様 最小梱包単位 温度特性 TACEシリーズ（高周波用） TACDシリーズ（高周波用）
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1003O
FRFM-501LD104KE1A0
FRFN-251LV104KC4A0
DCR2-22A25
FDFDD631U104KDADZ0
RFM2H104KD
FFALN251AU355UF0AA
RFN2E473K
EVN40M205UL
FRFM-401LD504KBBA3
RFM2E145KPD
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MBN600GS12AW
Abstract: 180Arms
Text: IGBT MODU ODULE MBN600GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 110 93 4-φ6.5 FEAT EATURES RES 2-M8 E * High speed and low saturation voltage. C 80 62 40 E * low noise due to built-in free-wheeling G diode - ultra soft fast recovery diode USFD .
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MBN600GS12AW
36max
MBN600GS12AW
180Arms
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ETON
Abstract: MBN400GS12AW switching 2000w
Text: IGBT MODU ODULE MBN400GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . * Isolated head sink (terminal to base).
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MBN400GS12AW
ETON
MBN400GS12AW
switching 2000w
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE F.R.D. FRS200BA F R S 2 0 0 B A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • High Speed t r r ^ 100ns
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FRS200BA
100ns
7RR12H3
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO 37E D H 7 ^ 1 2 4 3 QQDDD77 5 H S E M J ;. ~Q DIODE MODULE SanRex Power Diode Module D F60B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor
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QQDDD77
60Amp
DF60BA40
DF60BA60
00D0076
DF60BA
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schematic welding inverters
Abstract: 2RI250E 5000AIL
Text: 2 R I2 5 0 E 2 x 250A If t —Jls rj-— • g ± s i r7 - :£ ì > 3 . — )\, : Outline Drawings P O W E R D IO D E M O D U L E 20.0 20.0 r 20. 0 20.0 3*6.5 o'" - U I Features 131.0 • Large Capacitance • WOfflb Insulated Type • I 25.0_ |_ Easy Connection
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2RI250E
2x250A)
2RI250E
schematic welding inverters
5000AIL
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Untitled
Abstract: No abstract text available
Text: D IO D E M O D U L E f .R.d . FDF60BA40/60 Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed
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FDF60BA40/60
100ns
DC60A
00A///
00D1S23
Q00152M
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Untitled
Abstract: No abstract text available
Text: FCA100AA10 ^ V advance MOSFET MODULE FCA100AA10 UL;E76102 M F C A 1 OOAA is a dual power MOSFET module designed for fast switching applications of low voltage and high current. (2 devices are Separated.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink con
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FCA100AA10
E76102
00Q1D11
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FDF60BA
Abstract: H125 73b diode
Text: DIODE MODULE FR D. FDF60BA Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed
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FDF60BA
FDF60BA
100ns
DC60A
Tj-25
-Tj-150
7TiJi243
H125
73b diode
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CL329-0002-2
Abstract: CL329-0012-6 CL329-0022-0 CL329-0023-2 CL329-0042-7 CL329-0043-0 CL329-0045-5 HB-NF-PJ WTL 5 SERIES C3502
Text: N F S E R IE S RFcp.A X IA L CONNECTORS C15 type connectors for satellite broadcasting Overview C15 type connectors fo r satellite broadcasting our company's NF series conform w ith the specifications o f Technical Standards RCZ-6015 of the Electronic Industries
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RCZ-6015
HI-NNF-PJ-50/75
CL329-0002-2
CL329-0012-6
CL329-0022-0
CL329-0023-2
CL329-0042-7
CL329-0043-0
CL329-0045-5
HB-NF-PJ
WTL 5 SERIES
C3502
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B92 02 diode
Abstract: B91 02 diode b92 diode DIODE B91 FRS200AA FRS200AA60 SANSHA FRS200AA40 H150 B91 diode
Text: 7^12143 0G0G475 412 « S E M J SANSMA ELECTRIC MFG CO SbE D DIODE MODULE f .R . d . FRS200AA40/60 F R S 2 0 0 A A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 A A is suitable for high frequency application requiring low loss and high speed control.
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0G0G475
FRS200AA40/60
FRS200AA
trrS200ns
FRS200AA40
FRS200AA60
-200A
FRS200AA40/60
7W243
B92 02 diode
B91 02 diode
b92 diode
DIODE B91
FRS200AA60
SANSHA
H150
B91 diode
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Untitled
Abstract: No abstract text available
Text: N F S E R IE S RFco•AXIAL CONNECTORS C15 type connectors for satellite broadcasting Overview C 1 5 typ e connectors fo r satellite broadcasting our company's N F series conform w ith the specifications o f Technical Standards R C Z -6 0 1 5 o f the Electronic Industries
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Untitled
Abstract: No abstract text available
Text: SA N S H A ELECTRIC MFG CO 37E 7TR1E43 D QQ00071 1 i SEN J _T z'i'cn DIODE MODULE SanRex Pow er Diode Module D F 40 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor
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7TR1E43
QQ00071
40Amp
DF40AA
0000Q72
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE f .r .d . FRN300BA F R N 3 0 0 B A is a high speed isolated diode module designed for high power switching application. F R N 3 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • High Speed trrS 100ns
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FRN300BA
100ns
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250R16B
Abstract: No abstract text available
Text: 2 R I 1 5 E 2 x i 5 0 a M J iH 'S i : Outline Drawings P O W E R D IO D E M O D U L E 20.0 20.0 , .20.0 .20 0, 3-^6.5 Ü œ JS2 : Features 31 -0 • :* ;§ # Large Capacitance • Sfefltfli Insulated Type • -53-ffi3!!<7>/=it>i2lfcA’r&#!i • Jl •
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-53-ffi3!
I95t/RB9
250R16B
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Untitled
Abstract: No abstract text available
Text: 4R3TI30Y-080 k »i m S ± / < 7 - ;ES>a.-;U u x » a t e g s ? 3 . - ju DIODE and TYRISTOR MODULE : Features —*> 3 / - f G l a s s Passivation Chip • • Easy Connection • Insulated Type • d i/d t flit 0 * * 3 I ' Large d i/d t • d v /d t Large d v /d t
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4R3TI30Y-080
I95t/R89>
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TIL100
Abstract: 4R3TI60Y-080 P460 T151 T810
Text: 4R3TI60Y-080 g à E ffl ? y = t- K « 1 M : Outline Drawings ' DIODE and TYRISTOR MODULE : Features • I S ? X '< '>*< — '> 3 • ~f Glass Passivation Chip Easy Connection • Insulated Type • d i/d ti- fS # 1 ' ; * ^ v.' • d v /d t Gl. G?, G3, K)a
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4R3TI60Y-080
I95t/R89)
Shl50
TIL100
4R3TI60Y-080
P460
T151
T810
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2RI250E
Abstract: T151 T460 T810 cf 005
Text: 2 R I2 5 0 E 2 x 250A rj-— • g ± s i r7 - :£ ì> 3 .— )\ , If t —Jls : Outline Drawings POWER DIODE MODULE I Features Large Capacitance • WOfflb Insulated Type • 131.0 I 25.0_|_ 3B.0 . [«¡.0 _31.C 68.5 Easy Connection •#7 —v 3 fl-M8(Hexagon Bnlt and Washer Assemblies)
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2RI250E
2x250A)
2RI250E
I95t/R89>
T151
T460
T810
cf 005
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