ERD24
Abstract: ERD74 P930 T151 T460
Text: E R D 2 * E 4 R D 7 4 i 2 A 3j"— K * ± ' < 7 - 5^ 3!— K • : Outline Drawings FAST RECOVERY DIODE : Features • Grass passivated chip • High reverse voltage capability • X f v F JY t Stud mounted ■ E li& : Applications • "/?■>?M M •
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ERD24
ERD74
ERD74
I95t/R89)
Shl50
P930
T151
T460
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Untitled
Abstract: No abstract text available
Text: 3R3TI20E-080 K *1 M •%— i > i - ■ ' : Outline Drawings DIODE and TYRISTOR MODULE : Features -7 X /<>"■<“ '> 3 • • ASSUrt'“# ! * • -y^ Glass Passivation Chip Easy Connection Insulated Type • d i/ d t liM * '^ £ Large di/dt • d v / d tiiS * ''^ : # v,'
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3R3TI20E-080
I95t/R89
Shl50
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Untitled
Abstract: No abstract text available
Text: 2SD2234 % ± ' ì n - \ :7 > ì > % 9 N P I\ l = f i J £ 8f c ^ U — t M TR IP LE D IF F U S E D PLANER TYP E HIGH SPEED SWITCHING I Features • S H JE . High voltage, high speed switching • S ft ff iti High reliability •ffliH : Applications — $ •
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2SD2234
95t/R89
Shl50
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IR LFN
Abstract: 3gk5 H11R LFN ir
Text: ESAC87M-009H6A i s a ' y h + — ✓ < x) 7 ¥ ^ : Outline Drawings — K SCHOTTKY BARRIER DIODE : Features JEDEC Insulated p ac ka g e by fully m o l d in g . EIAJ Low V f Connection Diagram Super high speed sw itchin g. H igh reliability by planer design.
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ESAC87M-009H6A)
IR LFN
3gk5
H11R
LFN ir
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ij9 cc
Abstract: No abstract text available
Text: 6MBI20L-060 2 oa g ± /< 7 I^ H T M 'ii : Outline Drawings IG B T ^ i- J U IGBT MODULE 16 : Features • 17 7.5 7 7 7 7 7 16.5 3.5 High Speed Switching • ifeSSiOflE Low Saturation Voltage • S A * ^ — Hfttfc(MOS-y— hlfliit) •t iia — I I Tü I îê w c
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6MBI20L-060
l95t/R89
Shl50
ij9 cc
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IRM-38
Abstract: IR005
Text: ERC90M-02I5A LOW LOSS SUPER HIGH SPEED RECTIFIER • $ U t: : Features • w » ® * * # * * ftfc ? y In su la ted pa ckage by fu lly m o ld in g . • i&VF Low V F Connection Diagram S u p e r h ig h speed s w itc h in g . • - f u —j — iS ff ilc jc fc S f if iite
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ERC90M-02I5A)
IRM-38
IR005
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Untitled
Abstract: No abstract text available
Text: 2M BI75L-120 75A IG B T = £ \> z l - ) V (L S E R IE S ) IG B T M O D U L E : Features • " j + ' s 'f • flf c iS in ^ E • « s e n H ig h S peed S w itc h in g L o w S a tu ra tio n V o lta g e ( M O S tf- H iit) • V o lta g e D rive V a rie ty o f P ow er C a p a city Series
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BI75L-120
I95t/R89)
Shl50
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skm 151 fc
Abstract: FT460
Text: 6RI75G 75A POWER DIODE MODULE • 4^ ^ : : F e a t u r e s i • i • • HêBM ^ *> a Glass Passivation Chip Easy Connection Insulated Type ■ ■ f f l i Ê : A p p lic a t io n s • -f >v<— 9 —H fS fflB iK (■ ’ • /«■y 7- U - Æ Œ f f l Œ S
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6RI75G
50/60Hz
95t/R89
Shl50
skm 151 fc
FT460
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5A60
Abstract: 2di75
Text: 2D I75M -050 75 a : Outline Drawings ' < n — POWER TRANSISTOR MODULE : Features • SSihpE High DC Current Gain • High Speed Switching • f f l i i ! : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N CXfM ft$£
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l95t/RB9
Shl50
5A60
2di75
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ae 45a
Abstract: No abstract text available
Text: ERG75 45A • w in -a : Outline Drawings FAST RECOVERY DIODE Features • T V —?*— Pl aner chip • Soft recovery type • Stud mounted ■ E 3 i£ s: A p p lica tio n s • Switching power supplies ifc'fJl' • • ■iO'f&SSSiiJfEWiB Free-wheel diode
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ERG75
ae 45a
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YG801C09
Abstract: S4b0
Text: Y G 8 0 1 C O S IL A — k '> 3 y h + - / < i ; r y - f 5 r - K SCHOTTKY BARRIER DIODE • ¡H fJ l: Features Insulated package by fully m olding. Low V f C onnection D iagram S uper'high speed sw itchin g. • a * C = « # fl S tt High reliability by planer design.
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I95t/R89)
Shl50
YG801C09
S4b0
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Untitled
Abstract: No abstract text available
Text: YG801C04I5A ’• O utlin e D ra w in g s 4-7 ma». SCHOTTKY BARRIER DIODE 10.5max. ¡¿ih 2.7 1.2 Til 2.54 Features 0.7 0.6 2.7 2.54 JEDEC Insulated package by fu lly m o ld in g . SC-67 EIAJ M &V f Low V f m m & m C o n n e c tio n D ia g ra m S u p e r hig h speed s w itc h in g .
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YG801C04I5A)
SC-67
l95t/R89
Shl50
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3R3TI20E-080
Abstract: R611 diode 811
Text: 3R3TI20E-080 •%— K* 1M ' i > i - ■ : Outline Drawings DIODE and TYRISTOR MODULE : Features m • -7 X /<>"■<“ '> a "j ~7 Glass Passivation Chip • Easy Connection • t&1RJI£ Insulated Type • d i / d t l i £ v,' Large di/dt • d v / d t i t # v,'
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3R3TI20E-080
50/60H2Ã
3R3TI20E-080
R611
diode 811
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2SC294
Abstract: jldt 2SC2944 SC-65
Text: 2SC2944 N P N = B $ i;ij[ 7V 'tW i —^ TRIPLE DIFFUSED PLANER TYPE HIG H SPEED S W ITC H IN G • i Outline Drawings *32'O' Features • S iS x - f" j+ 's ? • ffclfJftTOJE • S f S IS 't i High speed switching Q. Low saturation voltage High reliability
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2SC2944
32-QI
SC-65
2SC294
jldt
2SC2944
SC-65
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2SC3865
Abstract: 5bhii
Text: 2SC3865 ± ' < TJ - Y 17 > Ì > X 9 N P N = B t e i J [ 7 °U— - t M TR IP LE D IF F U S E D PLANER TYPE «HE. HIGH VOLTAGE, HIGH SPEED SWITCHING • It 'S : F e a tu re s • ftW/±, • ft jfH ii High voltage, high speed switching High reliability ! A p p lic a t io n s
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2SC3865_
SC-67
2SC3865
5bhii
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B-457
Abstract: b457 2DI100Z-140 30S3 T151 T810 SM470 B-459
Text: 2DI100Z-140 iooa Outline Drawings POWER TRANSISTOR MODULE ’ Features • BüfÆ High Voltage • 7 lJ— 's W tâ —Ki^930c Including Free Wheeling Diode • A SO ^ / av,' Excellent Safe Operating Area Insulated Type • A pplications » Power Switching
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2DI100Z-140
I95t/R89)
Shl50
B-457
b457
30S3
T151
T810
SM470
B-459
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2SD1158
Abstract: A-188 HB 2 relay
Text: 2SD1158 TRIPLE DIFFUSED PLANER TYPE N P N E L m U Z m ^ - i- M HIGH SPEED SWITCHING Outline Drawings 4 ,5« . » 1.3 • 4 $ £ : Features High speed switching # h F E ^ ift l' High D .C . current gain • o f l L • ft fs lltt w High reliability * Applications
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2SD1158
TQ-22QAB
SC-46
2SD1158
A-188
HB 2 relay
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ENC471D-14A
Abstract: ENC221D-14A ENC820D-14A ENC271D14A ENC681D-14A ENC390D-14B ENC560D-14B ENC241D-14A ENC121D-14A ENC220D-14B
Text: D -14D ENC S ' i t - t í-y h 7 7 ° Iil•»•+>* mm] » D max. t max. d max. W (± 1 -& >£ E] (mm) A ( ±1) 4.7 E N C 2 2 0 D -1 4 B 1.9 2.2 E N C 2 7 0 D -1 4 B 1.6 E N C 3 3 0 D -1 4 B 5.0 E N C 3 9 0 D -1 4 B E N C 4 7 0 D -1 4 B 1.7 E N C 5 6 0 D -1 4 B
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D-14D
ENC220D-14B
ENC270D-14B
ENC330D-14B
ENC390D-14B
ENC470D-14B
ENC560D-14B
ENC680D-14B
ENC820D-14A
ENC101D-14A
ENC471D-14A
ENC221D-14A
ENC820D-14A
ENC271D14A
ENC681D-14A
ENC390D-14B
ENC560D-14B
ENC241D-14A
ENC121D-14A
ENC220D-14B
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ENC471D-07A
Abstract: ENC391 50 ENC471D07A enc471 enc271 ENC241 ENC47 ENC330 ENC821 ENC391
Text: ENC D-07 ÌÈ i- f r y • Æ f ê T a = 2 5 °C ENC220D-07B-ENC680D-07B % £ m ± /\' ')7. ? Ml± -mm ftüfiBWŒ V2 . 5 A (V) CW) y-v m w w (# # « ) ACrmsCV) DC (V ) ENC220D-07B 22 (20 —24) 14 18 43 0.9 ENC270D-07B 27(24-30) 17 22 53 1.0 2200 ENC330D-07B
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ENC220D-07B
ENC270D-
ENC330D-
ENC39Ã
ENC470D-
ENC560D-
ENC680D-
ENC820D-
ENC101D-
ENC121D-
ENC471D-07A
ENC391 50
ENC471D07A
enc471
enc271
ENC241
ENC47
ENC330
ENC821
ENC391
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T151
Abstract: TH25 A406
Text: YG801C04 5A SCHOTTKY BARRIER DIODE I t t J t : Features Insulated package by fully m olding. ><£Vf Low V f * U :» i' Connection Diagram Super high speed sw itching. »T V - * - a W l U S f c f S l i t t High reliability by planer design. i Applications
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YG801C0415A)
SC-67
500ns,
e3Te30S3%
I95t/R89)
T151
TH25
A406
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6MBI15F-060
Abstract: M604 cs105 330 hfk 8
Text: 6MBI15F-060 15A : Outline Drawings IG B T IGBT MODULE • ¡ t t f i : Features • Low Saturation V oltage • V H m W .I ( M O S y - H * iS ) • f t i Voltage Drive Variety of Power Capacity Series : A p p lic a tio n s • i — ? —| >/ < —? • A C , D C tf—
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6MBI15F-060
6MBI15F-060
M604
cs105
330 hfk 8
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ENS150-11A
Abstract: 400H ENS060-13 ENS070-13 ENS080-15 ENS120-15 ENS240-13
Text: ENS060-13 • Out l i ne D r a w i n g s SILICON SURGE ABSORBERS SB 01 02 m ' - K«* M a x i m u m Ratings and Characteri sti cs ' A bsolute M axim um Ratings Item n i± Maximum Off-State Voltage Critical Rate of Rise of Maximum Off-State Voltage V Ratings
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ENS060-13
10/1000as
ENS150-11A
400H
ENS060-13
ENS070-13
ENS080-15
ENS120-15
ENS240-13
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EM X100 M6
Abstract: diode U1J SIN03 SIN03-30 SIIM03 78310 SK 350A
Text: S IN 0 3 3 5 o a m ± ' < T7 - 9 4 * - Y : Outline Drawings GENERAL-USE RECTIFIER DIODE • ¡ N f f i : F e a tu re s • •k&HSi&'S- Diffused junction • fln/±8cM#Ji£ Compression contact type : Applications im M M • Battery chargers Brush-less generators
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SIIM03
SIN03-30
Mftl80Â
230xIO3
EM X100 M6
diode U1J
SIN03
78310
SK 350A
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JIS-C-0806
Abstract: ENS060-13 ENS070-13 ENS080-15 ENS120-15 ENS240-13 tb1208
Text: ENS120-15 > i;3 g±SSA i>t y y - ' < : Outline Drawings SILICON SURGE ABSORBERS « «rît m 01 r □ □ CO o \ U 02 •J- K « * fldtsuA.tifea ' □y h 7.6± 0.3 cm I— 1,6± 0.3 l.6±0.3 I ¿±0.1 JjMinirrO M a x i m u m Ratings a n d Ch ara c te ri s ti c s
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ENS120-15
Vt-i/77
JIS-C-0806
ENS060-13
ENS070-13
ENS080-15
ENS120-15
ENS240-13
tb1208
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