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IXYS Corporation IXGH25N100U1 IGBT Transistors 1000V 50A
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25N100U Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary data Low VCE sat High speed IGBT with Diode VCES 25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100AU1
25N100 Abstract: IXGH25N100AU1 IXGH25N100U1 25N100U Text: Preliminary data Low VCE sat High speed IGBT with Diode VCES 25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100AU1 25N100 25N100U
Untitled Abstract: No abstract text available Text: □IXYS Preliminary data Low -u vv V v ICE sat High speed IGBT with Diode V " ces 1000 V 25N100U1 IXGH25N100AU1 1000 V ^C25 50 A 50 A V v CE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES ^ v CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100U1 IXGH25N100AU1
s2555 Abstract: No abstract text available Text: Preliminary data v Low i_ w r v v V * C E s a t High speed IGBT with Diode CES 25N100U1 1000 V IXGH25N100AU1 1000 V ^C 25 50 A 50 A v ¥ CE (sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test C onditions v CES J j = 25°C to 150°C 1000 V v CGR Td = 25°C to 150°C; RGE = 1 MO	OCR Scan	PDF	IXGH25N100U1 IXGH25N100AU1 O-247 XGH25N1Ô s2555