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    25N120L Search Results

    25N120L Datasheets Context Search

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    25N120L

    Abstract: NGTB25N
    Contextual Info: 25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB25N120LWG NGTB25N120L/D 25N120L NGTB25N PDF

    MJ1000

    Contextual Info: 25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB25N120LWG NGTB25N120L/D MJ1000 PDF

    25N120L

    Abstract: 25N120 NGTB25N120LWG
    Contextual Info: 25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is


    Original     		NGTB25N120LWG NGTB25N120L/D 25N120L 25N120 PDF