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    25NS Search Results

    25NS Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    AM7200-25JC Rochester Electronics LLC AM7200 - FIFO, 256X9, 25ns, Asynchronous, CMOS, PQCC32 Visit Rochester Electronics LLC Buy
    AMPAL20L10APC Rochester Electronics LLC PAL20L10 - OT PLD, 25ns, PAL-Type, TTL, PDIP24 Visit Rochester Electronics LLC Buy
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    25NS Price and Stock

    Infineon Technologies AG BSZ42DN25NS3GATMA1

    MOSFET N-CH 250V 5A TSDSON-8
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    DigiKey BSZ42DN25NS3GATMA1 Reel 15,000 5,000
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    Avnet Americas BSZ42DN25NS3GATMA1 Reel 5,000 16 Weeks 5,000
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    Mouser Electronics BSZ42DN25NS3GATMA1 11,754
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    Newark BSZ42DN25NS3GATMA1 Cut Tape 80 1
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    Rochester Electronics BSZ42DN25NS3GATMA1 32,155 1
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    TME BSZ42DN25NS3GATMA1 1
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    Chip One Stop BSZ42DN25NS3GATMA1 Cut Tape 12,019 0 Weeks, 1 Days 1
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    EBV Elektronik BSZ42DN25NS3GATMA1 17 Weeks 5,000
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    Vyrian BSZ42DN25NS3GATMA1 11,070
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    Win Source Electronics BSZ42DN25NS3GATMA1 41,749
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    Infineon Technologies AG BSC670N25NSFDATMA1

    MOSFET N-CH 250V 24A TDSON-8-1
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    DigiKey BSC670N25NSFDATMA1 Digi-Reel 5,250 1
    • 1 $3.73
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    BSC670N25NSFDATMA1 Cut Tape 5,250 1
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    BSC670N25NSFDATMA1 Reel 5,000 5,000
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    Avnet Americas BSC670N25NSFDATMA1 Reel 35,000 16 Weeks 5,000
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    BSC670N25NSFDATMA1 Ammo Pack 16 Weeks, 4 Days 1
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    Newark BSC670N25NSFDATMA1 Cut Tape 2,498 1
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    Chip One Stop BSC670N25NSFDATMA1 Cut Tape 9,940 0 Weeks, 1 Days 1
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    EBV Elektronik BSC670N25NSFDATMA1 17 Weeks 5,000
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    Win Source Electronics BSC670N25NSFDATMA1 5,505
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    Infineon Technologies AG BSZ16DN25NS3GATMA1

    MOSFET N-CH 250V 10.9A 8TSDSON
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    DigiKey BSZ16DN25NS3GATMA1 Cut Tape 4,714 1
    • 1 $2.16
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    BSZ16DN25NS3GATMA1 Digi-Reel 4,714 1
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    Mouser Electronics BSZ16DN25NS3GATMA1 4,949
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    Newark BSZ16DN25NS3GATMA1 Cut Tape 7,092 1
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    Rochester Electronics BSZ16DN25NS3GATMA1 31,105 1
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    Ameya Holding Limited BSZ16DN25NS3GATMA1 922
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    Rutronik BSZ16DN25NS3GATMA1 Reel 15,000 5,000
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    Chip One Stop BSZ16DN25NS3GATMA1 Cut Tape 20,758 0 Weeks, 1 Days 1
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    Chip-Germany GmbH BSZ16DN25NS3GATMA1 975
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    EBV Elektronik BSZ16DN25NS3GATMA1 17 Weeks 5,000
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    IBS Electronics BSZ16DN25NS3GATMA1 5,000 5,000
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    Vyrian BSZ16DN25NS3GATMA1 16,271
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    Win Source Electronics BSZ16DN25NS3GATMA1 10,492
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    Texas Instruments SN74AHC125NSR

    IC BUFFER NON-INVERT 5.5V 14SOP
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    DigiKey SN74AHC125NSR Digi-Reel 3,375 1
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    SN74AHC125NSR Cut Tape 3,375 1
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    Rochester Electronics SN74AHC125NSR 87,924 1
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    TME SN74AHC125NSR 3
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    Texas Instruments SN74F125NSR

    IC BUFFER NON-INVERT 5.5V 14SOP
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    DigiKey SN74F125NSR Digi-Reel 1,970 1
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    Rochester Electronics SN74F125NSR 2,530 1
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    25NS Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    25NS10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NS80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NSEV22M6.3X5.5 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 22UF 20% 25V SMD Original PDF
    25NSEV33M4X55 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    25NSEV4R7M5X5.5 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 4.7UF 20% 25V SMD Original PDF
    25NSGG Altech Fuse 25A 415V BRITISH Original PDF
    25NSKV33M4X55 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    25NSR10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NSR100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NSR120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NSR140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NSR160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF
    25NSR20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=25A Original PDF

    25NS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    X84129

    Abstract: AN107 AN103 AN95 X84129Z X84129ZI X841295 402 WP
    Text: APPLICATION NOTE A V A I L A B L E AN95 • AN103 AN107 MPS EEPROM X84129 128K µPort Saver EEPROM FEATURES DESCRIPTION • Up to 10MHz data transfer rate at 5V operator • 25ns Read Access Time • Direct interface to microprocessors and microcontrollers


    Original
    AN103 AN107 X84129 10MHz --32-byte --14-lized X84129 AN107 AN103 AN95 X84129Z X84129ZI X841295 402 WP PDF

    5962-8868101LA

    Abstract: SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA
    Text: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


    Original
    MT5C2564 MIL-STD-883 24-Pin 28-Pin Ti4C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C 5962-8868101LA SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA PDF

    MX23L3216XI-80

    Abstract: MX23L3216 MX23L3216TI-10 MX23L3216TI-12 MX23L3216TI-80 MX23L3216XI-10 MX23L3216XI-12
    Text: PRELIMINARY MX23L3216 32M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 4Mb x 8 byte mode - 2Mb x 16 (word mode) • Fast access time - Random access:80/25ns(max.) • Page Size - 8 words per page • Current - Operating:40mA - Standby:15uA(max.)


    Original
    MX23L3216 32M-BIT 80/25ns PM0860 MX23L3216XI-80 MX23L3216 MX23L3216TI-10 MX23L3216TI-12 MX23L3216TI-80 MX23L3216XI-10 MX23L3216XI-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1711 UC3711 Dual Ultra High-Speed FET Driver FEATURES BLOCK DIAGRAM • 25ns Rise and Fall into 1000pF • 15ns Propagation Delay 7.5V REG • 1.5A Source or Sink Output Drive 6 VCC 7 A Out 5 B Out 3 Gnd 3k • Operation with 5V to 35V Supply 2.5k • High-Speed Schottky NPN Process


    Original
    UC1711 UC3711 1000pF UDG-99078 UC1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG5JT, UGF5JT, UGB5JT Series Vishay Semiconductors New Product formerly General Semiconductor Ultrafast Rectifiers Reverse Voltage 500 to 600V Forward Current 5.0A Reverse Recovery Time 25ns ITO-220AC UGF5 Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72)


    Original
    ITO-220AC O-220AC 03-Oct-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1708 UC2708 UC3708 www.ti.com SLUS171C – MARCH 1997 – REVISED SEPTEMBER 2007 DUAL NON-INVERTING POWER DRIVER • • • • • • FEATURES 1 • • • • • 3.0A Peak Current Totem Pole Output 5 to 35V Operation 25ns Rise and Fall Times 25ns Propagation Delays


    Original
    UC1708 UC2708 UC3708 SLUS171C UC1708 PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1711 UC3711 Dual Ultra High-Speed FET Driver FEATURES BLOCK DIAGRAM • 25ns Rise and Fall into 1000pF • 15ns Propagation Delay 7.5V REG • 1.5A Source or Sink Output Drive 6 VCC 7 A Out 5 B Out 3 Gnd 3k • Operation with 5V to 35V Supply 2.5k • High-Speed Schottky NPN Process


    Original
    UC1711 UC3711 1000pF UDG-99078 UC1709 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width


    Original
    UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original
    UT8Q512 50krads 100krads 36-lead 10krad) 30krad) 50krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows


    Original
    UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state


    Original
    UT9Q512K32 16Megabit 50krads 1E-10 68-lead 512K32 -40oC PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT9Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original
    UT9Q512 50krads 100krads 36-lead 50krad PDF

    STK1OC68-35

    Abstract: No abstract text available
    Text: STK10C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM SlfTlTEH FEATURES DESCRIPTION 25, 30, 35 and 45ns Access Times 12,15, 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STOflETimlng 104 or -tos STORE cycles to EEPROM


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    STK10C68 STK10C68 STK1OC68-35 PDF

    UN45

    Abstract: No abstract text available
    Text: STK11C68-M SlfTlTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MlL-STD-883/SMD # 5962-92324 FEATURES 30,35,45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Software STORE Initiation Automatic STORE Timing


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    STK11C68-M MlL-STD-883/SMD STK11C68 300-mil UN45 PDF

    transistor C 5386

    Abstract: No abstract text available
    Text: leluom Semiconductor, Inc. TC4467 TC4468 TC4469 LOGIC-INPUT CMOS QUAD DRIVERS FEATURES • ■ ■ ■ ■ ■ ■ High Peak Output C urrent. 1.2A Wide Operating Range. 4.5 to 18V Symmetrical Rise and Fall Times.25nsec


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    TC4467 TC4468 TC4469 25nsec 75nsec 500mA TC446X transistor C 5386 PDF

    stk 410 22 pin

    Abstract: stk10c68-45 STK10C66
    Text: STK10C68 SIÎTITEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES 2 5,3 0,35 and 45ns Access Times 12,15, 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STOflE Timing 100,000 STORE cycles to EEPROM


    OCR Scan
    STK10C68 STK10C68 stk 410 22 pin stk10c68-45 STK10C66 PDF

    Untitled

    Abstract: No abstract text available
    Text: STI641004D1-60G 168-PIN DIMMS 1M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC *HPC 60ns 17ns 110ns 25ns • • EDO (Hyper) Mode operation CAS-before-RAS refresh capability • RAS-only refresh capability


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    STI641004D1-60G 168-PIN 110ns STI641004D1-60G 42-pin 168pin PDF

    382e

    Abstract: No abstract text available
    Text: STK10C68-M SimTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES 30,35, 45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing


    OCR Scan
    STK10C68-M MIL-STD-833/SMD STK10C68-M STK10C68 28-pin 28-pad 382e PDF

    Untitled

    Abstract: No abstract text available
    Text: STI644004UD1-60VG 168-PIN DIMMS 4M X 64 Bit DRAM DIM M with EDO and without Buffers FEATURES • GENERAL DESCRIPTION Performance range: ^RAC I ^CAC 60ns 15ns I rC ^HPC 104ns 25ns The Simple Technology STI644004UD1-60VG is a 4M x 64 bit Dynamic RAM high density memory module. The Simple


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    STI644004UD1-60VG 168-PIN 104ns STI644004UD1-60VG 24-pin 300-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple


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    STI648004G1 -60VG 144-PIN 104ns STI648004G1-60VG 32-pin 400-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: STK12C88 SimTEK 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times • Store to EEPROM initiated by Hardware, Soft­ ware or AutoStore™ on Power Down • Recall to SRAM Initiated by Hardware Reset,


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    STK12C88 200ns STK12C88 40-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STK10C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM SlfTlTEH FEA TU R ES DESCRIPTION 25,30, 35 and 45ns A ccess Times 12,15, 20 and 25ns Output Enable A ccess Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STO flETim ing


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    STK10C68 STK10C68 PDF

    4011 CMOS NAND GATE

    Abstract: 4011 cmos logic gate cmos 4000 series 4023 MOS 4011 NAND gate 4011 4011 CMOS 4011 N4011 4011 c-mos
    Text: signotics C MOS NAND GATES ADVANCE SPECIFICATIONS C-MOS 4000 S E R IES A D VA NC ED 01935429 _ PIN CONFIGURATIONS DESCRIPTION These Signetics Series 40 00 C-MOS devices are positive logic N A N D gates. Operating voltage range is + 3 V to +15V. S w itching speeds are ty p ic a lly 25ns. Quiescent power


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    PDF

    CI 4001

    Abstract: cmos ic 4001 cmos 4000 series cmos 4001 4001 CMOS NOR GATE 4001 nor gate pin configuration 4001 S4025 cmos logic 4001 series 4000 3 input nor
    Text: signotics 4000 4001 4002 4025 C-MOS NOR GATES C-MOS 4000 SERIES AD VA N C ED INFORM ATION PIN CO N FIG U R A TIO N S DESCRIPTION These Signetics Series 4 0 0 0 C M O S devices are positive logic N O R gates. O perating voltage range is + 3V to +15V. S w itching speeds are ty p ic a lly 25ns. Quiescent pow er dissi­


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    PDF