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    Cobham PLC UT8Q512K32-SPC

    SRAM MODULE, 512KX32, 25NS, CMOS, CQFP68
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    Quest Components UT8Q512K32-SPC 8
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    . UT8Q512E20YCC

    Electronic Component
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    ComSIT USA UT8Q512E20YCC 1
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    UT8Q512 Datasheets (103)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UT8Q512 Aeroflex UTMC 512K x 8 SRAM Original PDF
    UT8Q512 Aeroflex UTMC 512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V. Original PDF
    UT8Q512-20ICA Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. Original PDF
    UT8Q512-20ICC Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. Original PDF
    UT8Q512-20ICX Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. Original PDF
    UT8Q512-20IPC Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. Original PDF
    UT8Q512-20IWA Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. Original PDF
    UT8Q512-20IWC Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. Original PDF
    UT8Q512-20IWX Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. Original PDF
    UT8Q512-20UCA Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. Original PDF
    UT8Q512-20UCC Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. Original PDF
    UT8Q512-20UCX Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. Original PDF
    UT8Q512-20UPC Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. Original PDF
    UT8Q512-20UWA Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Extended industrial temperature range flow. Original PDF
    UT8Q512-20UWC Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. Original PDF
    UT8Q512-20UWX Aeroflex UTMC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. Original PDF
    UT8Q512-25ICA Aeroflex UTMC 512K x 8 SRAM Original PDF
    UT8Q512-25ICC Aeroflex UTMC 512K x 8 SRAM Original PDF
    UT8Q512-25ICX Aeroflex UTMC 512K x 8 SRAM Original PDF
    UT8Q512-25IPA Aeroflex UTMC 512K x 8 SRAM Original PDF

    UT8Q512 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width


    Original     		UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads 36-lead 10krad) 30krad) 50krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet June 20, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows


    Original     		UT8Q512K32 16Megabit 32-bit 50krads 300krads 8E-11errors/bit-day, 0E14n/cm2 68-lead 10krad 50krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows


    Original     		UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads 1E-10 0E14n/cm2 36-lead 10krad) 30krad) 50krad PDF

    512K32

    Abstract: UT8Q512K32 5962-0
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet March, 2009 FEATURES ‰ 25ns maximum 3.3 volt supply address access time ‰ MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width


    Original     		UT8Q512K32 16Megabit 32-bit 50krads 16Mbit) 512K32 5962-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2003 FEATURES ‰ 20ns 3.3 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads 36-lead -40oC 125oC) 10krad) PDF

    UT8Q512

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet November, 2004 FEATURES ‰ 20ns 3.3 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads 36-lead PDF

    UT8Q512E

    Abstract: UT8Q512K32 UT8Q512K32E UT8Q1024K8 UT8Q512 UT8Q512K8
    Text: May 1, 2008 Dear Customer: The purpose of this letter is to update customers on the die inventory of Aeroflex’s 3.3V 4M Quantified Commercial-Off-The Shelf QCOTSTM used in our UT8Q512K8 and UT8Q512K32 products. In August 2007, Aeroflex announced the finite supply of the


    Original     		UT8Q512K8 UT8Q512K32 UT8Q512 UT8Q512E UT8Q512K32E UT8Q1024K8 PDF

    UT8Q512

    Abstract: CERAMIC FLATPACK 36 socket
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet February, 2003 FEATURES q 20ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads -40oC 125oC) 10krad) 30krad) CERAMIC FLATPACK 36 socket PDF

    UT8Q512

    Abstract: CERAMIC FLATPACK
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet April, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads 10krad) 30krad) 50krad CERAMIC FLATPACK PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet February 23, 2000 FEATURES q 25ns maximum address access time q MCM contains four 4 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width


    Original     		UT8Q512K32 16Megabit 32-bit 10E-9cm2/bit 8E-11errors/bit-day, 0E14TERISTICS 68-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet October 4, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows


    Original     		UT8Q512K32 16Megabit 32-bit 50krads 1E-10 0E14n/cm2 512K32 68-lead 10krad PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Preliminary Data Sheet September 21, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads 1E-10 0E14n/cm2 36-lead 10krad) 30krad) 50krad PDF

    UT8Q512

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet January 21, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 50krads 100krads 10krad) 30krad) 50krad PDF

    512K32

    Abstract: UT8Q512K32
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet November, 2004 FEATURES ‰ 25ns maximum 3.3 volt supply address access time ‰ MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width


    Original     		UT8Q512K32 16Megabit 32-bit 50krads 16Mbit) 512K32 68-lead -40oC PDF

    SRAM Cross References

    Abstract: UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4
    Text: Single Event Effects Qualification UT8Q512K8 RQ02 Lot 6ZVL04 4Mbit SRAM 7/21/03 Craig Hafer 719-594-8319 craig.hafer@aeroflex.com SUMMARY-Single event effects qualification testing was performed on the UTMC 4Mbit SRAM, (Samsung Rev C die), Lot 6ZVL04, at the Lawrence Berkeley Laboratory using


    Original     		UT8Q512K8 6ZVL04 6ZVL04, 88-inch 5E-11 9E-10 3E-09 7E-08 0E-11 SRAM Cross References UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4 PDF

    Aeroflex UTMC

    Abstract: UT8Q512
    Text: Aeroflex UTMC Product Information Sheet UT8Q512 SRAM Standby/Operating Current Characterization Summary Lot# 5EC026BA Abstract Characterization data generated by analyzing a substantial number of randomly selected UT8Q512 SRAMs shows a mean standby current of 0.80mA at room temperature and mean standby current of 11.91mA at


    Original     		UT8Q512 5EC026BA) 40MHz 512Kx8 40MHz) 40Mhz Aeroflex UTMC PDF

    UT8Q512E

    Abstract: No abstract text available
    Text: Standard Products UT8Q512E 512K x 8 RadTol SRAM Data Sheet November 11, 2008 INTRODUCTION The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an


    Original     		UT8Q512E PDF

    UT8Q512K32E

    Abstract: No abstract text available
    Text: Standard Products UT8Q512K32E 16 Megabit RadTolerant SRAM MCM Advanced Data Sheet June 30, 2008 INTRODUCTION The UT8Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs


    Original     		UT8Q512K32E 512Kx8 32-bit 50krads 68-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8Q512 512K x 8 SRAM Preliminary Data Sheet March 12, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 30krads 300krads 8E-11errors/bit-day, 0E14n/cm2 36-lead -40oC PDF

    UT8Q512

    Abstract: No abstract text available
    Text: Standard Products UT8Q512 512K x 8 SRAM Preliminary Data Sheet June 5, 2000 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		UT8Q512 30krads 300krads 36-lead PDF

    ut8q512e

    Abstract: No abstract text available
    Text: Standard Products UT8Q512E 512K x 8 RadTolerant SRAM Advanced Data Sheet June 30, 2008 INTRODUCTION The UT8Q512E RadTolerant product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable


    Original     		UT8Q512E 50krads 36-lead PDF

    ut8q512

    Abstract: No abstract text available
    Text: Standard Products UT8Q512 512K X 8 SRAM Advanced Data Sheet UT El i i « mas t, i & 1 m « • V i T i: a t « m February 16, 1999 i FEATURES INTRODUCTION □ 25ns 3.3 v olt supply m axim um address access tim e □ A synchronous operation for com patibility w ith industrystandard 512K x 8 SRA M s


    OCR Scan     		UT8Q512 0E14n/cm 8Q512) 512Kx8 36-lead PDF