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    TE Connectivity 2326593-8

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    Weidmüller Interface GmbH & Co. KG 2659380000

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    Burkert Fluid Control Systems 265938

    CONTROL HEAD, 8695-00-S2-FA05-E-Y-MP-00-0-0-0-0 *, 8695 SERIES | Burkert Fluid Control Systems 265938
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    RS Pro 1265938

    Stud Mt Foot (M) 75x30mm M12x40 60 ShA | RS PRO 1265938
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    26.5938 Datasheets Context Search

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    26.5938

    Abstract: 16503 AN609
    Text: SiA778DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SiA778DJ AN609, CONFIGU091 05-Feb-10 26.5938 16503 AN609

    16503

    Abstract: AN609
    Text: SiA517DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SiA517DJ AN609, CONFIGU091 09-Apr-09 16503 AN609

    AN609

    Abstract: No abstract text available
    Text: SiA511DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF SiA511DJ AN609 21-Jun-07

    SiA519EDJ

    Abstract: 16503 AN609
    Text: SiA519EDJ Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SiA519EDJ AN609, 30-Jul-09 16503 AN609

    AN609

    Abstract: No abstract text available
    Text: SiA913DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF SiA913DJ AN609 21-Jun-07

    74693

    Abstract: AN609
    Text: SiA917DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF SiA917DJ AN609 09-May-07 74693

    26.5938

    Abstract: 16503 AN609
    Text: SiA533EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SiA533EDJ AN609, 29-Jan-10 26.5938 16503 AN609

    4164

    Abstract: SIA513 16503 AN609
    Text: SiA513EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SiA513EDJ AN609, 31-Mar-09 4164 SIA513 16503 AN609

    transistor c 6073

    Abstract: AN609
    Text: SiA914DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF SiA914DJ AN609 03-May-07 transistor c 6073

    74692

    Abstract: AN609 SiA513DJ
    Text: SiA513DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF SiA513DJ AN609 09-May-07 74692

    AN609

    Abstract: 20224
    Text: SiA913ADJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF SiA913ADJ AN609, 06-Feb-09 AN609 20224