HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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W22C
Abstract: W22C4096 262144X16
Text: AUó I« tan W22C4096 Winbond 2 5 6 K X 1 6 BITS/512KX8 BITS CMOS MASK ROM GENERAL DESCRIPTION FEATURES Active: lOOmW typ. The W22C4096 is a high speed, low power mask-programmable read-only memory organ Standby: 25^W(typ.) ized as 262144X16 bits or 524288 X 8 bits
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W22C4096
BITS/512KX8
W22C4096
262144X16
B-1930
W22C
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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NS455
Abstract: MSM534000 MSM534000RS
Text: 4bE D • O K I semiconductor MSM534000 b724240 0 K1 D0CHÖQ7 blT «O K IJ semiconductor group 262,144 WORD x 16 BIT MASK ROM GENERAL DESCRIPTION The MSM534000RS is a silicon gate CMOS device ROM w ith 262,144 words x 16 b it capacity. It operates on a 5V single power supply and all inputs and outputs are TTL compatible. The
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b724240
MSM534000_
MSM534000RS
X-46-13-15â
MSM534000.
T-46-13-15
NS455
MSM534000
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VV005
Abstract: No abstract text available
Text: »HYUNDAI HY51V4370B f e r ie s 256KX 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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HY51V4370B
256KX
16-bit
400mil
40pin
40/44pin
1AC24-00-M
VV005
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RAU27
Abstract: rau2
Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast
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HY51V4264B
16-bit
HY51V42648
400mil
40pin
4Q/44pin
08mWFLB_
1AC30-10-MAY95
RAU27
rau2
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES I • • • • • • • • • • • • Organization . . . 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
16K-Byte/One
32K-Byte/16K-Word
64K-Byte/32K-Word
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O09P
Abstract: No abstract text available
Text: TMS29LF400T, TMS29LF400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES • • • • • • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors - One 32K-Byte/16K-Word Sector
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TMS29LF400T,
TMS29LF400B
8-BIT/262144
16-BIT
44-Pin
48-Pin
O09P
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 4 3 7 0 B S e r ie s 256K* 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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16-bit
HY51V4370B
400mil
40pin
40/44pin
1AC24-00-MA
DDD27M
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Untitled
Abstract: No abstract text available
Text: » « H Y U N D A I ín g H Y 5 1 V 4 4 6 0 B _S g n g s 256K X 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY51V4460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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16-bit
HY51V4460B
400mil
40pin
40/44pin
1AC28-00-MA
HY51V446B
HY514370BJC
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Untitled
Abstract: No abstract text available
Text: “ H Y U N D A I SEMICONDUCTOR H Y 5 1 4 3 7 0 S e r ie s with 2 w e 256K x i e-bit c m o s d ra m & wpb PRELIMINARY DESCRIPTION The HY514370 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514370
16-bit
400mil
40pin
40/44pin
1AC10-00-APR93
4b750Ã
HY514370JC
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HY514260
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY514260 Series 2 5 6 K X 1 6 - b lt C M O S DRAM w tth 2 C A S PRELIMINARY DESCRIPTION The HY514260 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514260
16-bit
400mil
40pln
40/44pin
1AC11-00-APR93
HY514260JC
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY514370B JSeries 256K X 16-blt CMOS ORAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY514370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514370B
16-blt
16-bit
400mil
40pin
40/44pin
4OU10-Z62]
72K18
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Untitled
Abstract: No abstract text available
Text: 'H YU N D AI HY514370B _Series 256K X 16-blt CMOS DRAM 2 WE & WPB w ith PRELIMINARY DESCRIPTION The HY514370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514370B
16-blt
HY514370B
16-bit
400mil
40pin
40/44pin
FEAT120)
0J312I0300)
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Untitled
Abstract: No abstract text available
Text: TMS29LF4Q0T, TMS29LF400B 524288 BY 8-BIT/262144 BY 15-BIT FLASH MEMORIES * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation f • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector
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TMS29LF4Q0T,
TMS29LF400B
8-BIT/262144
15-BIT
SMJS841A
16K-Byte/One
32K-Byte/16K-Word
64K-Byte/32K-Word
TMS29LF400T,
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TMS29F400B
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES * Single Power Supply Supports 5 V ±10% Read/Write Operation • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
4073307/B
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 4 4 6 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY514460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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256KX
16-bit
HY514460B
400mil
40pin
40/44pin
1AC27-00-MAY94
4b750Ã
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HY51V4264B Series 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V4264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design technique to achieve fast
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HY51V4264B
16-bit
400mil
40pin
40/44pin
4b750flfl
00G43D3
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hyundai hy 214
Abstract: 262144X16
Text: HY514170 Series «HYUNDAI SEMICONDUCTOR 256Kx16-blt CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY514170 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM O S process technology and advanced circuit design technique to achieve fast access
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HY514170
256Kx16-blt
16-bit
400mil
40pin
40/44pln
1AC09-00-APR93
hyundai hy 214
262144X16
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HYUNDAI i10
Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
Text: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access
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HY514260B
16-bit
400mil
40pin
40/44pin
0063BJ10)
4b750aa
HYUNDAI i10
MZN 1000 S
HY514260BJC
ASW10
1AC25-10-MAY95
HY51426
MP331
VH000
gd042s3
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do9-15
Abstract: TOT - 4301 do9-1 4880M D08-15 CH371 HY51V4264B
Text: HYUNDAI HY51V4264B Series 256Kx 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V4264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design technique to achieve fast
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HY51V4264B
16-bit
HV51V4264B
400mil
40pin
40/44pin
Q0D43G3
1AC30-10-MAY95
do9-15
TOT - 4301
do9-1
4880M
D08-15
CH371
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