70n60
Abstract: IXFB70N60Q2
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions
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38N100Q
Abstract: 98949
Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions
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38N100Q
264TM
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98949
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions
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72N55Q2
264TM
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50n80
Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions
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264TM
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50N80Q2
50n8
IXFB 50N80Q2
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50N80Q
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions
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80N50Q
264TM
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38N100Q2
Abstract: No abstract text available
Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 1000 V V DSS ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions
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264TM
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IXFB
Abstract: 50N80Q2 IXFB50N80Q2 50n80
Text: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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50N80Q2
264TM
IXFB
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IXFB
Abstract: IXFB70N60Q2
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions
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IXFB38N100Q2
Abstract: c2075
Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFB38N100Q2
264TM
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50N80Q2
Abstract: IXFB50N80Q2 264TM
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions
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264TM
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80N50Q2
Abstract: 80n5 IXFB 80N50Q2
Text: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL DATA IXGL 75N60BU1 VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode ISOPLUS-264TM (Electrically Isolated) Mounting Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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75N60BU1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions
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38N100Q2
264TM
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions
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72N55Q2
264TM
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80N50Q2
Abstract: 16-20pF
Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 80N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = V DSS ID25 = RDS on = ≤ trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions
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264TM
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings
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264TM
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62N50L
Abstract: IXTN62N50L
Text: Power MOSFETs with Extended FBSOA IXTB 62N50L IXTN 62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 500 = 62 ≤ 0.1 V A Ω Preliminary Data Sheet PLUS 264TM (IXTB) Symbol Test Conditions Maximum Ratings IXTB IXTN VDSS TJ = 25oC to 150oC
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62N50L
62N50L
264TM
150oC
IXTN62N50L
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IXFB38N100Q2
Abstract: c2075 c-2075
Text: HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings
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c-2075
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70n60
Abstract: 70n6 IXFB70N60Q2
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions
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264TM
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70n6
IXFB70N60Q2
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34n100
Abstract: jm 60 ac
Text: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V 30 A ID25 = ISOPLUS 264TM ISOPLUS264 RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions
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ISOPLUS264
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions
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264TM
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions
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72N55Q2
264TM
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions
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264TM
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