Datasheet Archive: 34N100 datasheets

34N100 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R5F72434N100FP#U0		Renesas Electronics Corporation	32-bit Microcontrollers

34N100 Price and Stock

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IXYS Corporation IXFL34N100 MOSFET N-CH 1000V 30A ISOPLUS264
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New Advantage Corporation	IXFL34N100		191		1	1 - 10 - 100 $111.03 1000 $103.63 10000 $103.63	Buy Now
IXYS Corporation IXFN34N100 MOSFET N-CH 1000V 34A SOT-227B
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Rochester Electronics LLC HGTG34N100E2 55A, 1000V N-CHANNEL IGBT
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Cynergy3 Components SSH66XE34N100 SWITCH HORIZ SS .5A NO/NC
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Sager	SSH66XE34N100				1	1 $223.58 10 $212.91 100 $197.24 1000 $197.24 10000 $197.24	Buy Now
Cynergy3 Components SSH66TE34N100S SHORT FLOAT HORIZ SS .1A EXT MNT
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34N100 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
34N100E2		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

34N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ixfn36n100 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V ID25 = 30 A ISOPLUS264TM RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	34N100 ISOPLUS264TM IXFN36N100 728B1 123B1 065B1	PDF
34N100 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A Ω = 0.28Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	34N100 OT-227 E153432 728B1 123B1 728B1 065B1 34N100	PDF
36N100 Abstract: 34n100 ixfn36n100 IXFE34N100 IXFE36N100 NS455 Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	36N100 34N100 227TM IXFN36N100 IXFE36N100: IXFE34N100: 728B1 IXFE34N100 IXFE36N100 NS455	PDF
34n100 Abstract: 125OC 34N-1 3000VV Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 RDS on G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability	Original	34N100 125OC 728B1 123B1 728B1 065B1 34n100 125OC 34N-1 3000VV	PDF
36N100 Abstract: IXFE36N100 IXFE34N100 Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 227TM (IXFE) S VDSS VDGR TJ = 25°C to 150°C	Original	36N100 34N100 34N100 IXFN36N100 IXFE36N100: IXFE36N100 IXFE34N100	PDF
36N100 Abstract: IXFN36N100 IXFE34N100 IXFE36N100 34N100 Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	36N100 34N100 227TM IXFN36N100 IXFE36N100: IXFE34N100: 728B1 123B1 728B1 065B1 IXFE34N100 IXFE36N100	PDF
34n100 Abstract: jm 60 ac Text: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V 30 A ID25 = ISOPLUS 264TM ISOPLUS264 RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	34N100 ISOPLUS264 ISOPLUS264TM ISOPLUS-264TM 728B1 jm 60 ac	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A = 0.28W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	34N100 OT-227 E153432	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A Ω = 0.28Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	34N100 OT-227 E153432 125OC 728B1 123B1 728B1 065B1	PDF
TAB 429 H Abstract: 34N100 Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A = 0.28W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	34N100 OT-227 E153432 TAB 429 H 34N100	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
34N100E2 Abstract: TA9895 Text: 34N100E2 34A, 1000V N-Channel IGBT April 1995 Package Features JE D EC STYLE TO -247 • 34A, 1000V EMITTER • Latch Free Operation • Typical Fall Time •710ns • High Input Impedance • Low Conduction Loss Description The 34N100E2 is a MOS gated high voltage switching	OCR Scan	HGTG34N100E2 710ns HGTG34N100E2 34N100E2 TA9895	PDF

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34N100 Search Results

34N100 Result Highlights (1)

34N100 Price and Stock

IXYS Corporation IXFL34N100

IXYS Corporation IXFN34N100

Rochester Electronics LLC HGTG34N100E2

Cynergy3 Components SSH66XE34N100

Cynergy3 Components SSH66TE34N100S

34N100 Datasheets (1)

34N100 Datasheets Context Search

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TAB 429 H

7N60B equivalent

34N100E2